Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userDensity-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system
74
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
Quantum Hall ferromagnetic transitions are typically achieved by increasing the Zeeman energy through in-situ sample rotation, while transitions in systems with pseudo-spin indices can be induced by gate control. We report here a gate-controlled quantum Hall ferromagnetic transition between two real spin states in a conventional two-dimensional system without any in-plane magnetic field. We show that the ratio of the Zeeman splitting to the cyclotron gap in a Ge two-dimensional hole system increases with decreasing density owing to inter-carrier interactions. Below a critical density of $sim2.4times 10^{10}$ cm$^{-2}$, this ratio grows greater than $1$, resulting in a ferromagnetic ground state at filling factor $ u=2$. At the critical density, a resistance peak due to the formation of microscopic domains of opposite spin orientations is observed. Such gate-controlled spin-polarizations in the quantum Hall regime opens the door to realizing Majorana modes using two-dimensional systems in conventional, low-spin-orbit-coupling semiconductors.
rate research
Read More
Experiments on a nearly spin degenerate two-dimensional electron system reveals unusual hysteretic and relaxational transport in the fractional quantum Hall effect regime. The transition between the spin-polarized (with fill fraction $ u = 1/3$) and spin-unpolarized ($ u = 2/5$) states is accompanied by a complicated series of hysteresis loops reminiscent of a classical ferromagnet. In correlation with the hysteresis, magnetoresistance can either grow or decay logarithmically in time with remarkable persistence and does not saturate. In contrast to the established models of relaxation, the relaxation rate exhibits an anomalous divergence as temperature is reduced. These results indicate the presence of novel two-dimensional ferromagnetism with a complicated magnetic domain dynamic.
We have studied quantum-well-confined holes based on the Luttinger-model description for the valence band of typical semiconductor materials. Even when only the lowest quasi-two-dimensional (quasi-2D) subband is populated, the static spin susceptibility turns out to be very different from the universal isotropic Lindhard-function lineshape obtained for 2D conduction-electron systems. The strongly anisotropic and peculiarly density-dependent spin-related response of 2D holes at long wavelengths should make it possible to switch between easy-axis and easy-plane magnetization in dilute magnetic quantum wells. An effective g factor for 2D hole systems is proposed.
We report the first unambiguous observation of a fractional quantum Hall state in the Landau level of a two-dimensional hole sample at the filling factor $ u=8/3$. We identified this state by a quantized Hall resistance and an activated temperature dependence of the longitudinal resistance and found an energy gap of 40 mK. To our surprise the particle-hole conjugate state at filling factor $ u=7/3$ in our sample does not develop down to 6.9 mK. This observation is contrary to that in electron samples in which the 7/3 state is typically more stable than the 8/3 state. We present evidence that the asymmetry between the 7/3 and 8/3 states in our hole sample is due to Landau level mixing.
We study a two-dimensional electron system where the electrons occupy two conduction band valleys with anisotropic Fermi contours and strain-tunable occupation. We observe persistent quantum Hall states at filling factors $ u = 1/3$ and 5/3 even at zero strain when the two valleys are degenerate. This is reminiscent of the quantum Hall ferromagnet formed at $ u = 1$ in the same system at zero strain. In the absence of a theory for a system with anisotropic valleys, we compare the energy gaps measured at $ u = 1/3$ and 5/3 to the available theory developed for single-valley, two-spin systems, and find that the gaps and their rates of rise with strain are much smaller than predicted.
Magneto-transport measurements are performed on the two-dimensional electron system (2DES) in an AlGaAs/GaAs heterostructure. By increasing the magnetic field perpendicular to the 2DES, magnetoresistivity oscillations due to Landau quantisation can be identified just near the direct insulator-quantum Hall (I-QH) transition. However, different mobilities are obtained from the oscillations and transition point. Our study shows that the direct I-QH transition does not always correspond to the onset of strong localisation.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
