We present an alternative approach to the fabrication of highly efficient superconducting nanowire single-photon detectors (SNSPDs) based on tungsten silicide. Using well-established technologies for the deposition of dielectric mirrors and anti-reflection coatings in conjunction with an embedded WSi bilayer photon absorber structure, we fabricated a bandwidth-enhanced detector. It exhibits system detection efficiencies (SDE) higher than $left(87.1pm1.3right),%$ in the range from $1450,mathrm{nm}$ to $1640,mathrm{nm}$, with a maximum of $left(92.9pm1.1right),%$ at $1515,mathrm{nm}$. Our measurements indicate SDE enhancements of up to $left(18.4pm1.7right),%$ over a single-absorber WSi SNSPD. The latter has been optimized for 1550 nm for comparison and exhibits maximum SDE of $left(93.5pm1.2right),%$ at 1555 nm. We emphasize that our technological approach has been tested with, but is not limited to, the wavelengths and absorber material presented here. It could be adapted flexibly for multi-color detector systems from the ultraviolet to the mid-infrared wavelength range. This bears the potential for significant improvements in many current quantum optical experiments and applications as well as for detector commercialization.
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