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Register a new userResistive switching in MoSe$_{2}$/BaTiO$_{3}$ hybrid structures
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Here we study the resistive switching (RS) effect that emerges when ferroelectric BaTiO$_{3}$ (BTO) and few-layers MoSe$_{2}$ are combined in one single structure. The C-V loops reveal the ferroelectric nature of both Al/Si/SiO$_{x}$/BTO/Au and Al/Si/SiO$_{x}$/MoSe$_{2}$/BTO/Au structures and the high quality of the SiO$_{x}$/MoSe$_{2}$ interface in the Al/Si/SiOx/MoSe$_{2}$/Au structure. Al/Si/SiO$_{x}$/MoSe$_{2}$/BTO/Au hybrid structures show the electroforming free resistive switching that is explained on the basis of the modulation of the potential distribution at the MoSe$_{2}$/BTO interface via ferroelectric polarization flipping. This structure shows promising resistive switching characteristics with switching ratio of $approx{}$10$^{2}$ and a stable memory window, which are highly required for memory applications.
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The increasing demand for high-density data storage leads to an increasing interest in novel memory concepts with high scalability and the opportunity of storing multiple bits in one cell. A promising candidate is the redox-based resistive switch repositing the information in form of different resistance states. For reliable programming, the underlying physical parameters need to be understood. We reveal that the programmable resistance states are linked to internal series resistances and the fundamental nonlinear switching kinetics. The switching kinetics of Ta$_{2}$O$_{5}$-based cells was investigated in a wide range over 15 orders of magnitude from 250 ps to 10$^{5}$ s. We found strong evidence for a switching speed of 10 ps which is consistent with analog electronic circuit simulations. On all time scales, multi-bit data storage capabilities were demonstrated. The elucidated link between fundamental material properties and multi-bit data storage paves the way for designing resistive switches for memory and neuromorphic applications.
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We investigate two-dimensional electric dipole sheets in the superlattice made of BaTiO$_{3}$ and BaZrO$_{3}$ using first-principles-based Monte-Carlo simulations and density functional calculations. Electric dipole domains and complex patterns are observed and the complex dipole structures with various symmetries (e.g. Pma2, Cmcm and Pmc2_{1}) are further confirmed by density functional calculations, which are found to be almost degenerate in energy with the ferroelectric ground state of the Amm2 symmetry, therefore strongly resembling magnetic sheets. More complex dipole patterns, including vortices and anti-vortices, are also observed, which may constitute the intermediate states that overcome the high energy barrier of different polarization orientations previously predicted by Lebedevonlinecite{Lebedev2013}. We also show that such system possesses large electrostrictive effects that may be technologically important.
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