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Depth resolved chemical speciation of a superlattice structure

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 Added by Gangadhar Das
 Publication date 2017
  fields Physics
and research's language is English




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We report results of simultaneous x-ray reflectivity and grazing incidence x-ray fluorescence measurements in combination with x-ray standing wave assisted depth resolved near edge x-ray absorption measurements to reveal new insights on chemical speciation of W in a W-B4C superlattice structure. Interestingly, our results show existence of various unusual electronic states for the W atoms especially those sitting at the surface and interface boundary of a thin film medium as compared to that of the bulk. These observations are found to be consistent with the results obtained using first principles calculations. Unlike the conventional x-ray absorption measurements the present approach has an advantage that it permits the determination of depth resolved chemical nature of an element in the thin layered materials at atomic length scale resolutions.

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We report a detailed ab initio study of two superlattice heterostructures, one component of which is a unit cell of CuPt ordered InSb_(0.5)As_(0.5). This alloy part of the heterostructures is a topological semimetal. The other component of each system is a semiconductor, zincblende-InSb, and wurtzite-InAs. Both heterostructures are semiconductors. Our theoretical analysis predicts that the variation in the thickness of the InSb layer in InSb/InSb_(0.5)As_(0.5) heterostructure renders altered band gaps with different characteristics (i.e. direct or indirect). The study holds promise for fabricating heterostructures, in which the modulation of the thickness of the layers changes the number of carrier pockets in these systems.
Resonant tunnelling is a quantum mechanical process that has long been attracting both scientific and technological attention owing to its intriguing underlying physics and unique applications for high-speed electronics. The materials system exhibiting resonant tunnelling, however, has been largely limited to the conventional semiconductors, partially due to their excellent crystalline quality. Here we show that a deliberately designed transition metal oxide superlattice exhibits a resonant tunnelling behaviour with a clear negative differential resistance. The tunnelling occurred through an atomically thin, lanthanum {delta}-doped SrTiO3 layer, and the negative differential resistance was realized on top of the bipolar resistance switching typically observed for perovskite oxide junctions. This combined process resulted in an extremely large resistance ratio (~10^5) between the high and low-resistance states. The unprecedentedly large control found in atomically thin {delta}-doped oxide superlattices can open a door to novel oxide-based high-frequency logic devices.
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