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Register a new userElectrical resistance of individual defects at a topological insulator surface
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Added by
Felix L\\\"upke M.Sc.
Publication date
2017
fields
Physics
and research's language is
English
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Three-dimensional topological insulators host surface states with linear dispersion, which manifest as a Dirac cone. Nanoscale transport measurements provide direct access to the transport properties of the Dirac cone in real space and allow the detailed investigation of charge carrier scattering. Here, we use scanning tunnelling potentiometry to analyse the resistance of different kinds of defects at the surface of a (Bi0.53Sb0.47)2Te3 topological insulator thin film. The largest localized voltage drop we find to be located at domain boundaries in the topological insulator film, with a resistivity about four times higher than that of a step edge. Furthermore, we resolve resistivity dipoles located around nanoscale voids in the sample surface. The influence of such defects on the resistance of the topological surface state is analysed by means of a resistor network model. The effect resulting from the voids is found to be small compared to the other defects.
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We consider a magnetic skyrmion crystal formed at the surface of a topological insulator. Incorporating the exchange interaction between the helical Dirac surface states and the periodic Neel or Bloch skyrmion texture, we obtain the resulting electronic band structures. We discuss the properties of the reconstructed skyrmion bands, namely the impact of symmetries on the energies and Berry curvature. We find substantive qualitative differences between the Neel and Bloch cases, with the latter generically permitting a low-energy tight-binding representation whose parameters are tightly constrained by symmetries. We explicitly construct the associated Wannier orbitals, which resemble the ring-like chiral bound states of helical Dirac fermions coupled to a single skyrmion in a ferromagnetic background. We construct a two-band tight-binding model with complex nearest-neighbor hoppings which captures the salient topological features of the low-energy bands. Our results are relevant to magnetic topological insulators (TIs), as well as to TI-magnetic thin film heterostructures, in which skyrmion crystals may be stabilized.
We predict that a single oscillation of a strong optical pulse can significantly populate the surface conduction band of a three-dimensional topological insulator, Bi2Se3. Both linearly- and circularly-polarized pulses generate chiral textures of interference fringes of population in the surface Brillouin zone. These fringes constitute a self-referenced electron hologram carrying information on the topology of the surface Bloch bands, in particular, on the effect of the warping term of the low-energy Hamiltonian. These electron-interference phenomena are in a sharp contrast to graphene where there are no chiral textures for a linearly-polarized pulse and no interference fringes for circularly-polarized pulse. These predicted reciprocal space electron-population textures can be measured experimentally by time resolved angle resolved photoelectron spectroscopy (TR-ARPES) to gain direct access to non-Abelian Berry curvature at topological insulator surfaces.
The surface of topological insulators is proposed as a promising platform for spintronics and quantum information applications. In particular, when time- reversal symmetry is broken, topological surface states are expected to exhibit a wide range of exotic spin phenomena for potential implementation in electronics. Such devices need to be fabricated using nanoscale artificial thin films. It is of critical importance to study the spin behavior of artificial topological MBE thin films associated with magnetic dopants, and with regards to quantum size effects related to surface-to-surface tunneling as well as experimentally isolate time-reversal breaking from non-intrinsic surface electronic gaps. Here we present observation of the first (and thorough) study of magnetically induced spin reorientation phenomena on the surface of a topological insulator. Our results reveal dramatic rearrangements of the spin configuration upon magnetic doping contrasted with chemically similar nonmagnetic doping as well as with quantum tunneling phenomena in ultra-thin high quality MBE films. While we observe that the spin rearrangement induced by quantum tunneling occurs in a time-reversal invariant fashion, we present critical and systematic observation of an out-of-plane spin texture evolution correlated with magnetic interactions, which breaks time-reversal symmetry, demonstrating microscopic TRB at a Kramers point on the surface.
The influence of dephasing on the quantum spin Hall effect (QSHE) is studied. In the absence of dephasing, the longitudinal resistance in a QSHE system exhibits the quantum plateaus. We find that these quantum plateaus are robust against the normal dephasing but fragile with the spin dephasing. Thus, these quantum plateaus only survive in mesoscopic samples. Moreover, the longitudinal resistance increases linearly with the sample length but is insensitive to the sample width. These characters are in excellent agreement with the recent experimental results [science {bf 318}, 766 (2007)]. In addition, we define a new spin Hall resistance that also exhibits quantum plateaus. In particular, these plateaus are robust against any type of dephasing and therefore, survive in macroscopic samples and better reflect the topological nature of QSHE.
We investigate spin-orbit torques on magnetization in an insulating ferromagnetic (FM) layer that is brought into a close proximity to a topological insulator (TI). In addition to the well-known field-like spin-orbit torque, we identify an anisotropic anti-damping-like spin-orbit torque that originates in a diffusive motion of conduction electrons. This diffusive torque is vanishing in the limit of zero momentum (i. e. for spatially homogeneous electric field or current), but may, nevertheless, have a strong effect on spin-torque resonance at finite frequency provided external field is neither parallel nor perpendicular to the TI surface. The required electric field configuration can be created by a grated top gate.
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