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Register a new userAtomic Engineering of Single Photon Sources in 2D Boron Nitride Zai-Quan
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Artificial atomic systems in solids such as single photon emitters are becoming increasingly important building blocks in quantum information processing and scalable quantum nanophotonic networks. Here, we report on a controllable way to engineer emitters in two-dimensional (2D) hexagonal boron nitride (hBN) crystals using plasma processing. The method is robust, and yields a 7-fold increase in the density of emitters in hBN, which is promising for their deployment in practical devices. While as-fabricated emitters suffer from blinking and bleaching, a subsequent annealing step yields photo-stable emitters. The presented process is the first step towards controllable placement of quantum emitters in hBN for integrated on-chip quantum nanophotonics based on 2D materials.
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Artificial atomic systems in solids are becoming increasingly important building blocks in quantum information processing and scalable quantum nanophotonic networks. Yet, synthesis of color centers that act as single photon emitters which are suitable for on-chip applications is still beyond reach. Here, we report a number of plasma and thermal annealing methods for the fabrication of emitters in tape-exfoliated hexagonal boron nitride (hBN) crystals. A two-step process comprised of Ar plasma etching and subsequent annealing in Ar is highly robust, and yields a seven-fold increase in the concentration of emitters in hBN. The initial plasma etching step generates emitters that suffer from blinking and bleaching, whereas the two-step process yields emitters that are photostable at room temperature and have an emission energy distribution that is red-shifted relative to that of pristine hBN. An analysis of emitters fabricated by a range of plasma and annealing treatments, combined with a theoretical investigation of point defects in hBN indicates that single photon emitters characterized by a high degree of photostability and emission wavelengths greater than ~700 nm are associated with defect complexes that contain oxygen. This is further confirmed by generating the emitters by annealing hBN in an oxidative atmosphere. Our findings advance present understanding of the structure of quantum emitter in hBN and enhance the nanofabrication toolkit that is needed to realize integrated quantum nanophotonics based on 2D materials.
Quantum emitters in hexagonal boron nitride (hBN) are promising building blocks for the realization of integrated quantum photonic systems. However, their spectral inhomogeneity currently limits their potential applications. Here, we apply tensile strain to quantum emitters embedded in few-layer hBN films and realize both red and blue spectral shifts with tuning magnitudes up to 65 meV, a record for any two-dimensional quantum source. We demonstrate reversible tuning of the emission and related photophysical properties. We also observe rotation of the optical dipole in response to strain, suggesting the presence of a second excited state. We derive a theoretical model to describe strain-based tuning in hBN, and the rotation of the optical dipole. Our work demonstrates the immense potential for strain tuning of quantum emitters in layered materials to enable their employment in scalable quantum photonic networks.
Hexagonal boron nitride (hBN) is an emerging two dimensional material for quantum photonics owing to its large bandgap and hyperbolic properties. Here we report a broad range of multicolor room temperature single photon emissions across the visible and the near infrared spectral ranges from point defects in hBN multilayers. We show that the emitters can be categorized into two general groups, but most likely possess similar crystallographic structure. We further show two approaches for engineering of the emitters using either electron beam irradiation or annealing, and characterize their photophysical properties. The emitters exhibit narrow line widths of sub 10 nm at room temperature, and a short excited state lifetime with high brightness. Remarkably, the emitters are extremely robust and withstand aggressive annealing treatments in oxidizing and reducing environments. Our results constitute the first step towards deterministic engineering of single emitters in 2D materials and hold great promise for the use of defects in boron nitride as sources for quantum information processing and nanophotonics.
Single photon emitters in 2D hexagonal boron nitride (hBN) have attracted a considerable attention because of their highly intense, stable, and strain-tunable emission. However, the precise source of this emission, in particular the detailed atomistic structure of the involved crystal defect, remains unknown. In this work, we present first-principles calculations of the vibrationally resolved optical fingerprint of the spin-triplet (2)(_^3)B_1 to (1)(_^3)B_1 transition of the VNCB point defect in hBN. Based on the excellent agreement with experiments for key spectroscopic quantities such as the emission frequency and polarization, the photoluminescence (PL) line shape, Huang-Rhys factor, Debye-Waller factor, and re-organization energy, we conclusively assign the observed single photon emission at ~2eV to the VNCB defect. Our work thereby resolves a long-standing debate about the exact chemical nature of the source of single photon emission from hBN and establishes the microscopic understanding necessary for controlling and applying such photons for quantum technological applications.
A recent study associate carbon with single photon emitters (SPEs) in hexagonal boron nitride (h-BN). This observation, together with the high mobility of carbon in h-BN suggest the existence of SPEs based on carbon clusters. Here, by means of density-functional theory calculations we studied clusters of substitutional carbon atoms up to tetramers in hexagonal boron nitride. Two different conformations of neutral carbon trimers have zero-point line energies and shifts of the phonon sideband compatible with typical photoluminescence spectra. Moreover, some conformations of two small C clusters next to each other result in photoluminescence spectra similar to those found in experiments. We also showed that vacancies are unable to reproduce the typical features of the phonon sideband observed in most measurements due to the large spectral weight of low-energy breathing modes, ubiquitous in such defects.
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