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Register a new userElectronic bandstructure and van der Waals coupling of ReSe2 revealed by high-resolution angle-resolved photoemission spectroscopy
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ReSe2 and ReS2 are unusual compounds amongst the layered transition metal dichalcogenides as a result of their low symmetry, with a characteristic in-plane anisotropy due to in-plane rhenium chains. They preserve inversion symmetry independent of the number of layers and, in contrast to more well-known transition metal dichalcogenides, bulk and few-monolayer Re-TMD compounds have been proposed to behave as electronically and vibrational decoupled layers. Here, we probe for the first time the electronic band structure of bulk ReSe2 by direct nanoscale angle-resolved photoemission spectroscopy. We find a highly anisotropic in- and out-of-plane electronic structure, with the valence band maxima located away from any particular high-symmetry direction. The effective mass doubles its value perpendicular to the Re chains and the interlayer van der Waals coupling generates significant electronic dispersion normal to the layers. Our density functional theory calculations, including spin-orbit effects, are in excellent agreement with these experimental findings.
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The rhenium-based transition metal dichalcogenides (TMDs) are atypical of the TMD family due to their highly anisotropic crystalline structure and are recognized as promising materials for two dimensional heterostructure devices. The nature of the band gap (direct or indirect) for bulk, few and single layer forms of ReS$_2$ is of particular interest, due to its comparatively weak inter-planar interaction. However, the degree of inter-layer interaction and the question of whether a transition from indirect to direct gap is observed on reducing thickness (as in other TMDs) are controversial. We present a direct determination of the valence band structure of bulk ReS$_2$ using high resolution angle resolved photoemission spectroscopy (ARPES). We find a clear in-plane anisotropy due to the presence of chains of Re atoms, with a strongly directional effective mass which is larger in the direction orthogonal to the Re chains (2.2 $m_e$) than along them (1.6 $m_e$), in good agreement with density functional theory calculations. An appreciable inter-plane interaction results in an experimentally-measured difference of ~100-200 meV between the valence band maxima at the Z point (0,0,1/2) and the $Gamma$ point (0,0,0) of the three-dimensional Brillouin zone. This leads to a direct gap at Z and a close-lying but larger gap at $Gamma$, implying that bulk ReS2 is marginally indirect. This may account for recent conflicting transport and photoluminescence measurements and the resulting uncertainty about the direct or indirect gap nature of this material.
High resolution angle resolved photoemission measurements and band structure calculations are carried out to study the electronic structure of BaMnSb$_2$. All the observed bands are nearly linear that extend to a wide energy range. The measured Fermi surface mainly consists of one hole pocket around $Gamma$ and a strong spot at Y which are formed from the crossing points of the linear bands. The measured electronic structure of BaMnSb$_2$ is unusual and deviates strongly from the band structure calculations. These results will stimulate further efforts to theoretically understand the electronic structure of BaMnSb$_2$ and search for novel properties in this Dirac material.
We report high resolution angle-resolved photoemission spectroscopy (ARPES) studies of the electronic structure of BaFe$_2$As$_2$, which is one of the parent compounds of the Fe-pnictide superconductors. ARPES measurements have been performed at 20 K and 300 K, corresponding to the orthorhombic antiferromagnetic phase and the tetragonal paramagnetic phase, respectively. Photon energies between 30 and 175 eV and polarizations parallel and perpendicular to the scattering plane have been used. Measurements of the Fermi surface yield two hole pockets at the $Gamma$-point and an electron pocket at each of the X-points. The topology of the pockets has been concluded from the dispersion of the spectral weight as a function of binding energy. Changes in the spectral weight at the Fermi level upon variation of the polarization of the incident photons yield important information on the orbital character of the states near the Fermi level. No differences in the electronic structure between 20 and 300 K could be resolved. The results are compared with density functional theory band structure calculations for the tetragonal paramagnetic phase.
In this article we review recent work on van der Waals (vdW) systems in which at least one of the components has strong spin-orbit coupling. We focus on a selection of vdW heterostructures to exemplify the type of interesting electronic properties that can arise in these systems. We first present a general effective model to describe the low energy electronic degrees of freedom in these systems. We apply the model to study the case of (vdW) systems formed by a graphene sheet and a topological insulator. We discuss the electronic transport properties of such systems and show how they exhibit much stronger spin-dependent transport effects than isolated topological insulators. We then consider vdW systems in which the layer with strong spin-orbit coupling is a monolayer transition metal dichalcogenide (TMD) and briefly discuss graphene-TMD systems. In the second part of the article we discuss the case in which the vdW system includes a superconducting layer in addition to the layer with strong spin-orbit coupling. We show in detail how these systems can be designed to realize odd-frequency superconducting pair correlations. Finally, we discuss twisted graphene-NbSe2 bilayer systems as an example in which the strength of the proximity-induced superconducting pairing in the normal layer, and its Ising character, can be tuned via the relative twist angle between the two layers forming the heterostructure.
A Weyl semimetal is a new type of topological quantum phase with intriguing physics near the Weyl nodes. Although the equilibrium state of Weyl semimetals has been investigated, the ultrafast dynamics near the Weyl node in the nonequilibrium state is still missing. Here by performing time and angle resolved photoemission spectroscopy on type-II Weyl semimetal MoTe$_2$, we reveal the dispersion of the unoccupied states and identify the Weyl node at 70 meV above E$_F$. Moreover, by tracking the ultrafast relaxation dynamics near the Weyl node upon photo-excitation with energy, momentum and temporal resolution, two intrinsic recovery timescales are observed, a fast one of 430 fs and a slow one of 4.1 ps, which are associated with hot electron cooling by optical phonon cascade emission and anharmonic decay of hot optical phonons respectively. The electron population shows a metallic response, and the two temperature model fitting of the transient electronic temperature gives an electron-phonon coupling constant of $lambdalangleOmega^2ranglesimeq32$ $textrm{meV}^2$. Our work provides important dynamic information for understanding the relaxation mechanism of a Weyl semimetal and for exploiting potential applications using ultrafast optical control.
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