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Register a new userStrong Electron-Phonon Interaction and Colossal Magnetoresistance in EuTiO$_3$
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At low temperatures, EuTiO$_3$ system has very large resistivities and exhibits colossal magnetoresistance. Based on a first principle calculation and the dynamical mean-field theory for small polaron we have calculated the transport properties of EuTiO$_3$. It is found that due to electron-phonon interaction the conduction band may form a tiny subband which is close to the Fermi level. The tiny subband is responsible for the large resistivity. Besides, EuTiO$_3$ is a weak antiferromagnetic material and its magnetization would slightly shift the subband via exchange interaction between conduction electrons and magnetic atoms. Since the subband is close to the Fermi level, a slight shift of its position gives colossal magnetoresistance.
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Understanding the physics of strongly correlated electronic systems has been a central issue in condensed matter physics for decades. In transition metal oxides, strong correlations characteristic of narrow $d$ bands is at the origin of such remarkable properties as the Mott gap opening, enhanced effective mass, and anomalous vibronic coupling, to mention a few. SrVO$_3$, with V$^{4+}$ in a $3d^1$ electronic configuration is the simplest example of a 3D correlated metallic electronic system. Here, we focus on the observation of a (roughly) quadratic temperature dependence of the inverse electron mobility of this seemingly simple system, which is an intriguing property shared by other metallic oxides. The systematic analysis of electronic transport in SrVO$_3$ thin films discloses the limitations of the simplest picture of e-e correlations in a Fermi liquid; instead, we show that the quasi-2D topology of the Fermi surface and a strong electron-phonon coupling, contributing to dress carriers with a phonon cloud, play a pivotal role on the reported electron spectroscopic, optical, thermodynamic and transport data. The picture that emerges is not restricted to SrVO$_3$ but can be shared with other $3d$ and $4d$ metallic oxides.
The three band p-d model of strongly correlated electrons interacting with optical phonon via diagonal and off-diagonal electron-phonon interaction is considered within cluster perturbation theory. At first step the exact diagonalization of the Hamiltonian of CuO4 cluster results in the construction of local polaronic eigenstates |p> with hole numbers nh=0,1,2 per unit cell. The inter cluster hoppings and interactions are exactly written in terms of Hubbard operators X(pq)= |p><q| determined within the multielectron polaronic eigenstates |p>. The Fermi type single electron quasiparticle dispersion and spectral weight are calculated for the undoped antiferromagnetic parent insulator like La2CuO4. The quasiparticle dispersion of Hubbard polarons is determined by a hybridization of the several Hubbard subbands with local Franck-Condon resonances. For small electron-phonon interaction the conductivity band is stronger renormalized then the valence band. Nevertheless for large electron-phonon interaction both bands are strongly renormalized with quasiparticle localization. Effect of partial compensation of diagonal and off-diagonal electron-phonon interaction at intermediate coupling is found.
Raman scattering experiments on stoichiometric, Mott-insulating LaTiO$_3$ over a wide range of excitation energies reveal a broad electronic continuum which is featureless in the paramagnetic state, but develops a gap of $sim 800$ cm$^{-1}$ upon cooling below the Neel temperature $T_N = 146$ K. In the antiferromagnetic state, the spectral weight below the gap is transferred to well-defined spectral features due to spin and orbital excitations. Low-energy phonons exhibit pronounced Fano anomalies indicative of strong interaction with the electron system for $T > T_N$, but become sharp and symmetric for $T < T_N$. The electronic continuum and the marked renormalization of the phonon lifetime by the onset of magnetic order are highly unusual for Mott insulators and indicate liquid-like correlations between spins and orbitals.
Quantum nematic phases are analogous to classical liquid crystals. Like liquid crystals, which break the rotational symmetries of space, their quantum analogues break the point-group symmetry of the crystal due to strong electron-electron interactions, as in quantum Hall states, Sr3Ru2O7, and high temperature superconductors. Here, we present angle resolved magnetoresistance (AMRO) measurements that reveal a quantum nematic phase in the hexaboride EuB6. We identify the region in the temperature-magnetic field phase diagram where the magnetoresistance shows two-fold oscillations instead of the expected four-fold pattern. This is the same region where magnetic polarons were previously observed, suggesting that they drive the nematicity in EuB6. This is also the region of the phase diagram where EuB6 shows a colossal magnetoresistance (CMR). This novel interplay between magnetic and electronic properties could thus be harnessed for spintronic applications.
Here we investigate antiferromagnetic Eu$_{5}$In$_{2}$Sb$_{6}$, a nonsymmorphic Zintl phase. Our electrical transport data show that Eu$_{5}$In$_{2}$Sb$_{6}$ is remarkably insulating and exhibits an exceptionally large negative magnetoresistance, which is consistent with the presence of magnetic polarons. From {it ab initio} calculations, the paramagnetic state of Eu$_{5}$In$_{2}$Sb$_{6}$ is a topologically nontrivial semimetal within the generalized gradient approximation (GGA), whereas an insulating state with trivial topological indices is obtained using a modified Becke-Johnson potential. Notably, GGA+U calculations suggest that the antiferromagnetic phase of Eu$_{5}$In$_{2}$Sb$_{6}$ may host an axion insulating state. Our results provide important feedback for theories of topological classification and highlight the potential of realizing clean magnetic narrow-gap semiconductors in Zintl materials.
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