Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userDescription of statistical switching in perpendicular STT-MRAM within an analytical and numerical micromagnetic framework
82
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
The realistic modeling of STT-MRAM for the simulations of hybrid CMOS/Spintronics devices in comprehensive simulation environments require a full description of stochastic switching processes in state of the art STT-MRAM. Here, we derive an analytical formulation that takes into account the spin-torque asymmetry of the spin polarization function of magnetic tunnel junctions studying. We studied its validity range by comparing the analytical formulas with results achieved numerically within a full micromagnetic framework. We also find that a reasonable fit of the probability density function (PDF) of the switching time is given by a Pearson Type IV PDF. The main results of this work underlines the need of data-driven design of STT-MRAM that uses a full micromagnetic simulation framework for the statistical proprieties PDF of switching processes.
rate research
Read More
We present an analytical model for calculating energy barrier for the magnetic field-driven domain wall-mediated magnetization reversal of a magneto-resistive random access memory (MRAM) cell and apply it to study thermal stability factor $Delta$ for various thicknesses of W layers inserted into the free layer (FL) as a function of the cell size and temperature. We find that, by increasing W thickness, the effective perpendicular magnetic anisotropy (PMA) energy density of the FL film monotonically increases, but at the same time, $Delta$ of the cell mainly decreases. Our analysis shows that, in addition to saturation magnetization $M_s$ and exchange stiffness constant $A_mathrm{ex}$ of the FL film, the parameter that quantifies the $Delta$ of the cell is its coercive field $H_c$, rather than the net PMA field $H_k$ of the FL film comprising the cell.
Magnetic skyrmions are localized swirls of magnetization with a non-trivial topological winding number. This winding increases their robustness to superparamagnetism and gives rise to a myriad of novel dynamical properties, making them attractive as next-generation information carriers. Recently the equation of motion for a skyrmion was derived using the approach pioneered by Thiele, allowing for macroscopic skyrmion systems to be modeled efficiently. This powerful technique suffers from the prerequisite that one must have a priori knowledge of the functional form of the interaction between a skyrmion and all other magnetic structures in its environment. Here we attempt to alleviate this problem by providing a simple analytic expression which can generate arbitrary repulsive interaction potentials from the micromagnetic Hamiltonian. We also discuss a toy model of the radial profile of a skyrmion which is accurate for a wide range of material parameters.
As a unique mechanism for MRAMs, magnetic coupling needs to be accounted for when designing memory arrays. This paper models both intra- and inter-cell magnetic coupling analytically for STT-MRAMs and investigates their impact on the write performance and retention of MTJ devices, which are the data-storing elements of STT-MRAMs. We present magnetic measurement data of MTJ devices with diameters ranging from 35nm to 175nm, which we use to calibrate our intra-cell magnetic coupling model. Subsequently, we extrapolate this model to study inter-cell magnetic coupling in memory arrays. We propose the inter-cell magnetic coupling factor Psi to indicate coupling strength. Our simulation results show that Psi=2% maximizes the array density under the constraint that the magnetic coupling has negligible impact on the devices performance. Higher array densities show significant variations in average switching time, especially at low switching voltages, caused by inter-cell magnetic coupling, and dependent on the data pattern in the cells neighborhood. We also observe a marginal degradation of the data retention time under the influence of inter-cell magnetic coupling.
Skyrmions are emerging topological spin structures that are potentially revolutionary for future data storage and spintronics applications. The existence and stability of skyrmions in magnetic materials is usually associated to the presence of the Dzyaloshinskii-Moriya interaction (DMI) in bulk magnets or in magnetic thin films lacking inversion symmetry. While some methods have already been proposed to generate isolated skyrmions in thin films with DMI, a thorough study of the conditions under which the skyrmions will remain stable in order to be manipulated in an integrated spintronic device are still an open problem. The stability of such structures is believed to be a result of ideal combinations of perpendicular magnetic anisotropy (PMA), DMI and the interplay between geometry and magnetostatics. In the present work we show some micromagnetic results supporting previous experimental observations of magnetic skyrmions in spin-valve stacks with a wide range of DMI values. Using micromagnetic simulations of cobalt-based disks, we obtain the magnetic ground state configuration for several values of PMA, DMI and geometric parameters. Skyrmion numbers, corresponding to the topological charge, are calculated in all cases and confirm the occurrence of isolated, stable, axially symmetric skyrmions for several combinations of DMI and anisotropy constant. The stability of the skyrmions in disks is then investigated under magnetic field and spin-polarized current, in finite temperature, highlighting the limits of applicability of these spin textures in spintronic devices.
The understanding of the dynamical properties of skyrmion is a fundamental aspect for the realization of a competitive skyrmion based technology beyond CMOS. Most of the theoretical approaches are based on the approximation of a rigid skyrmion. However, thermal fluctuations can drive a continuous change of the skyrmion size via the excitation of thermal modes. Here, by taking advantage of the Hilbert-Huang transform, we demonstrate that at least two thermal modes can be excited which are non-stationary in time. In addition, one limit of the rigid skyrmion approximation is that this hypothesis does not allow for correctly describing the recent experimental evidence of skyrmion Hall angle dependence on the amplitude of the driving force, which is proportional to the injected current. In this work, we show that, in an ideal sample, the combined effect of field-like and damping-like torques on a breathing skyrmion can indeed give rise to such a current dependent skyrmion Hall angle. While here we design and control the breathing mode of the skyrmion, our results can be linked to the experiments by considering that the thermal fluctuations and/or disorder can excite the breathing mode. We also propose an experiment to validate our findings.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
