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Register a new userNew bulk p-type skutterudites DD0.7Fe2.7Co1.3Sb12-xXx (X = Ge, Sn) reaching ZT>1.3
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The best p-type skutterudites so far are didymium filled, Fe/Co substituted, Sb-based skutterudites. Substitution at the Sb-sites influences the electronic structure, deforms the Sb4-rings, enhances the scattering of phonons on electrons and impurities and this way reduces the lattice thermal conductivity. In this paper we study structural and transport properties of p-type skutterudites with the nominal composition DD0.7Fe2.7Co1.3Sb11.7{Ge/Sn}0.3, which were prepared by a rather fast reaction-annealing-melting technique. The Ge-doped sample showed impurities, which did not anneal out completely and even with ZT > 1 the result was not satisfying. However, the single-phase Sn-doped sample, DD0.7Fe2.7Co1.3Sb11.8Sn0.2, showed a lower thermal and lattice thermal conductivity than the undoped skutterudite leading to a higher ZT=1.3, hitherto the highest ZT for a p-type skutterudite. Annealing at 570 K for 3 days proved the stability of the microstructure. After severe plastic deformation (SPD), due to additionally introduced defects, an enhancement of the electrical resistivity was compensated by a significantly lower thermal conductivity and the net effect led to a record high figure of merit: ZT = 1.45 at 850 K for DD0.7Fe2.7Co1.3Sb11.8Sn0.2.
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The efficiency of energy conversion in thermoelectric generators (TEGs) is directly proportional to electrical conductivity and Seebeck coefficient while inversely to thermal conductivity. The challenge is to optimize these interdependent parameters simultaneously. In this work, the problem is addressed with a novel approach of nanostructuring and constructive electronic structure modification to achieve a very high value of dimensionless figure of merit ZT greater than 3.6 at 1000 K with negative Seebeck coefficient. Supersaturated solid-solutions of Si-Ge containing 1 atomic percent Fe and 10 atomic percent P are prepared by high-energy ball milling. The bulk samples consisting of ultra-fine nano-crystallites 9.7 nm are obtained by the sophisticated low-temperature & high-pressure sintering process. Despite that the electrical resistivity is slightly high due to the localization of electrons is associated with the highly disordered structure and low electrical density of states near the chemical potential, a very low thermal conductivity k{appa} less than 1 W m-1K-1 and very large magnitude of Seebeck coefficient exceeding 470 uV K-1 are achieved in association with the nanostructuring and the Fe 3d impurity states, respectively, to realize a very large magnitude of ZT.
Novel filled skutterudites EpyNi4Sb12-xSnx (Ep = Ba and La) have been prepared by arc melting followed by annealing at 250C, 350C and 450C up to 30 days in sealed quartz vials. A maximum filling level of y = 0.93 and y = 0.65 was achieved for the Ba and La filled skutterudite, respectively. Single-phase samples with the composition Ni4Sb8.2Sn3.8, Ba0.42Ni4Sb8.2Sn3.8 and Ba0.92Ni4Sb6.7Sn5.3 were employed for measurements of the physical properties i.e. temperature dependent electrical resistivity, Seebeck coefficient and thermal conductivity. Resistivity data showed a crossover from metallic to semiconducting behaviour. The corresponding gap width was extracted from maxima in the Seebeck coefficient data as a function of temperature. Temperature dependent single crystal X-ray structure analyses (at 100 K, 200 K and 300 K) revealed the thermal expansion coefficients, Einstein and Debye temperatures for two selected samples Ba0.73Ni4Sb8.1Sn3.9 and Ba0.95Ni4Sb6.1Sn5.9. These data compare well with Debye temperatures from measurements of specific heat (4.4 K < T < 200 K). Several mechanical properties were measured and evaluated. Thermal expansion coefficients are 11.8.10-6 K-1 for Ni4Sb8.2Sn3.8 to 13.8.10-6 K-1 for Ba0.92Ni4Sb6.7Sn5.3. Room temperature Vickers hardness values (up to a load of 24.5 mN) vary within the range of 2.6 GPa to 4.7 GPa. Severe plastic deformation (SPD) via high-pressure torsion (HPT) was used to introduce nanostructuring. Physical properties before and after HPT were compared, showing no significant effect on the materials thermoelectric behaviour.
Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type doping. In this work, we use all three approaches together to fabricate direct-band-gap Ge-Sn alloys. The heavily doped n-type Ge-Sn is realized with CMOS-compatible nonequilibrium material processing. P is used to form highly doped n-type Ge-Sn layers and to modify the lattice parameter of P-doped Ge-Sn alloys. The strain engineering in heavily-P-doped Ge-Sn films is confirmed by x-ray diffraction and micro Raman spectroscopy. The change of the band gap in P-doped Ge-Sn alloy as a function of P concentration is theoretically predicted by density functional theory and experimentally verified by near-infrared spectroscopic ellipsometry. According to the shift of the absorption edge, it is shown that for an electron concentration greater than 1x10^20 cm-3 the band-gap renormalization is partially compensated by the Burstein-Moss effect. These results indicate that Ge-based materials have high potential for use in near-infrared optoelectronic devices, fully compatible with CMOS technology.
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The recent discoveries of strikingly large zero-field Hall and Nernst effects in antiferromagnets Mn$_3$$X$, ($X$ = Sn, Ge) have brought the study of magnetic topological states to the forefront of condensed matter research and technological innovation. These effects are considered fingerprints of Weyl nodes residing near the Fermi energy, promoting Mn$_3$$X$, ($X$ = Sn, Ge) as a fascinating platform to explore the elusive magnetic Weyl fermions. In this review, we provide recent updates on the insights drawn from experimental and theoretical studies of Mn$_3$$X$, ($X$ = Sn, Ge) by combining previous reports with our new, comprehensive set of transport measurements of high-quality Mn$_3$Sn and Mn$_3$Ge single crystals. In particular, we report magnetotransport signatures specific to chiral anomalies in Mn$_3$Ge and planar Hall effect in Mn$_3$Sn, which have not yet been found in earlier studies. The results summarized here indicate the essential role of magnetic Weyl fermions in producing the large transverse responses in the absence of magnetization.
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