The attainability of modification of the apparent magnetic anisotropy in (III,Mn)V ferromagnetic semiconductors is probed by means of the finite-elements-based modelling. The most representative case of (Ga,Mn)As and its in-plane uniaxial anisotropy is investigated. The hysteresis loops of the continuous films of a ferromagnetic semiconductor as well as films structured with the elliptic antidots are modelled for various eccentricity, orientation, and separation of the anti dots. The effect of anti-dots on the magnetic anisotropy is confirmed but overall is found to be very weak. The subsequent modelling for (Ga,Mn)As film with the elliptic dots comprising of metallic NiFe shows much stronger effect, revealing switching of the magnetic moment in the ferromagnetic semiconductor governed by the switching behavior of the metallic inclusions.
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