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Register a new userObservation of Low-Energy Einstein Phonon and Superconductivity in Single-Crystalline LaBe$_{13}$
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The thermal and electrical transport properties of single-crystalline LaBe$_{13}$ have been investigated by specific-heat ($C$) and electrical-resistivity ($rho$) measurements. The specific-heat measurements in a wide temperature range revealed the presence of a hump anomaly near 40 K in the $C$($T$)/$T$ curve, indicating that LaBe$_{13}$ has a low-energy Einstein-like-phonon mode with a characteristic temperature of $sim$ 177 K. In addition, a superconducting transition was observed in the $rho$ measurements at the transition temperature of 0.53 K, which is higher than the value of 0.27 K reported previously by Bonville et al. Furthermore, an unusual $T^3$ dependence was found in $rho$($T$) below $sim$ 50 K, in contrast to the behavior expected from the electron--electron scattering or the electron--Debye phonon scattering.
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We have grown single crystals of YbFe6Ge6 and LuFe6Ge6 and characterized their anisotropic behaviour through low field magnetic susceptibility, field-dependent magnetization, resistivity and heat capacity measurements. The Yb+3 valency is confirmed by LIII XANES measurements. YbFe6Ge6 crystals exhibit a field-dependent, sudden reorientation of the Fe spins at about 63 K, a unique effect in the RFe6Ge6 family (R = rare earths) where the Fe ions order anti-ferromagnetically with Neel temperatures above 450 K and the R ions magnetism appears to behave independently. The possible origins of this unusual behaviour of the ordered Fe moments in this compound are discussed.
The physical properties of single-crystalline SmBe$_{13}$ with a NaZn$_{13}$-type cubic structure have been studied by electrical resistivity ($rho$), specific heat ($C$), and magnetization ($M$) measurements in magnetic fields of up to 9 T. The temperature ($T$) dependence of $rho$ shows normal metallic behavior without showing the Kondo -ln$T$ behavior, suggesting the weak hybridization effect in this system. Analyses of the temperature dependence of $C$ suggest that the Sm ions of this compound are trivalent and that the crystalline-electric-field (CEF) ground state is a $Gamma_8$ quartet with a first-excited state of a $Gamma_7$ doublet located at the energy scale of $sim$ 90 K. Mean-field calculations based on the suggested CEF level scheme can reasonably well reproduce the $T$ dependence of magnetic susceptibility ($chi$) below $sim$ 70 K. These results in the paramagnetic state strongly indicate that the 4$f$ electrons are well localized with the Sm$^{3+}$ configuration. At low temperatures, the 4$f$ electrons undergo a magnetic order at $T_{rm M}$ $sim$ 8.3 K, where $chi$($T$) shows an antiferromagnetic-like cusp anomaly. From the positive Curie--Weiss temperature obtained from the mean-field calculations and from a constructed magnetic phase diagram with multiple regions, we discussed the magnetic structure of SmBe$_{13}$ below $T_{rm M}$, by comparing with other isostructural MBe$_{13}$ compounds showing helical-magnetic ordering.
Polarized infrared reflectivity spectra of a (110)-oriented TbScO3 single crystal plate were measured down to 10 K. The number of observed polar phonons active along the crystallographic c axis at low temperatures is much higher than predicted by factor-group analysis for the orthorhombic Pbnm space group. Moreover, the lowest frequency phonons active in E||c as well as in E||[1-10] polarized spectra exhibit dramatic softening tending to a lattice instability at low temperatures. The dielectric permittivity at microwave frequencies does not show any ferroelectric-like anomaly, but the dielectric loss exhibits a maximum at 100 K. The origin of the discrepancy between the number of predicted and observed polar phonons as well as the tendency toward lattice instability are discussed. Magnetic measurements reveal an antiferromagnetic phase transition near 3 K.
The caged compound LaRu2Zn20 exhibits a structural transition at TS =150 K, whose driving mechanism remains elusive. We have investigated atomic dynamics by the measurements of specific heat C and inelastic X-ray scattering (IXS). The lattice part of the specific heat Clat divided by T3, Clat/T3, shows a broad peak at around 15 K, which is reproduced by two Einstein modes with characteristic temperatures of 35 K and 82 K, respectively. IXS measurements along the [111] and [110] directions reveal optical phonon modes at 3 meV (35 K) and 7 meV (80 K), respectively, whose values agree with the values of Einstein temperatures. The first principles calculation has assigned the phonon modes at 3 meV as the optical modes of Zn atoms located at the middle of two La atoms. The low-energy vibration of the Zn atom perpendicular to the there-fold axis is thought to lead the structural instability of LaRu2Zn20.
We report magnetic field dependent transport measurements on a single crystal of cubic YSb together with first principles calculations of its electronic structure. The transverse magnetoresistance does not saturate up to 9 T and attains a value of 75,000 % at 1.8 K. The Hall coefficient is electron-like at high temperature, changes sign to hole-like between 110 and 50 K, and again becomes electron-like below 50 K. First principles calculations show that YSb is a compensated semimetal with a qualitatively similar electronic structure to that of isostructural LaSb and LaBi, but with larger Fermi surface volume. The measured electron carrier density and Hall mobility calculated at 1.8 K, based on a single band approximation, are 6.5$times10^{20}/$cm$^{3}$ and 6.2$times10^{4}$cm$^{2}$/Vs, respectively. These values are comparable with those reported for LaBi and LaSb. Like LaBi and LaSb, YSb undergoes a magnetic field-induced metal-insulator-like transition below a characteristic temperature T$_{m}$, with resistivity saturation below 13 K. Thickness dependent electrical resistance measurements show a deviation of the resistance behavior from that expected for a normal metal; however, they do not unambiguously establish surface conduction as the mechanism for the resistivity plateau.
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