No Arabic abstract
Photonic crystals use periodic structures to create forbidden frequency regions for optical wave propagation, that allow for the creation and integration of complex optical functions in small footprint devices. Such strategy has also been successfully applied to confine mechanical waves and to explore their interaction with light in the so-called optomechanical cavities. Because of their challenging design, these cavities are traditionally fabricated using dedicated high-resolution electron-beam lithography tools that are inherently slow, limiting this solution to small-scale applications or research. Here we show how to overcome this problem by using a deep-UV photolithography process to fabricate optomechanical crystals on a commercial CMOS foundry. We show that a careful design of the photonic crystals can withstand the limitations of the photolithography process, producing cavities with measured intrinsic optical quality factors as high as $Q_{i}=(1.21pm0.02)times10^{6}$. Optomechanical crystals are also created using phononic crystals to tightly confine the sound waves within the optical cavity that results in a measured vacuum optomechanical coupling rate of $g_{0}=2pitimes(91pm4)$ kHz. Efficient sideband cooling and amplification are also demonstrated since these cavities are in the resolved sideband regime. Further improvement in the design and fabrication process suggest that commercial foundry-based optomechanical cavities could be used for quantum ground-state cooling.
We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With one of the interconnect layers defining a ground plane between the trap electrode layer and the p-type doped silicon substrate, ion loading is robust and trapping is stable. We measure a motional heating rate comparable to those seen in surface-electrode traps of similar size. This is the first demonstration of scalable quantum computing hardware, in any modality, utilizing a commercial CMOS process, and it opens the door to integration and co-fabrication of electronics and photonics for large-scale quantum processing in trapped-ion arrays.
We report on optomechanical GaAs disk resonators with ultrahigh quality factor - frequency product Qf. Disks standing on a simple pedestal exhibit GHz breathing modes attaining a Qf of 10^13 measured under vacuum at cryogenic temperature. Clamping losses are found to be the dominant source of dissipation in this configuration. A new type of disk resonator integrating a shield within the pedestal is then proposed and its working principles and performances investigated by numerical simulations. For dimensions compatible with fabrication constraints, the clamping-loss-limited Q reaches 10^7-10^9 corresponding to Qf of 10^16-10^18. This shielded pedestal approach applies to any heterostructure presenting an acoustic mismatch.
Silicon spin qubits have achieved high-fidelity one- and two-qubit gates, above error correction thresholds, promising an industrial route to fault-tolerant quantum computation. A significant next step for the development of scalable multi-qubit processors is the operation of foundry-fabricated, extendable two-dimensional (2D) arrays. In gallium arsenide, 2D quantum-dot arrays recently allowed coherent spin operations and quantum simulations. In silicon, 2D arrays have been limited to transport measurements in the many-electron regime. Here, we operate a foundry-fabricated silicon 2x2 array in the few-electron regime, achieving single-electron occupation in each of the four gate-defined quantum dots, as well as reconfigurable single, double, and triple dots with tunable tunnel couplings. Pulsed-gate and gate-reflectometry techniques permit single-electron manipulation and single-shot charge readout, while the two-dimensionality allows the spatial exchange of electron pairs. The compact form factor of such arrays, whose foundry fabrication can be extended to larger 2xN arrays, along with the recent demonstration of coherent spin control and readout, paves the way for dense qubit arrays for quantum computation and simulation.
We describe the strong optomechanical dynamical interactions in ultrahigh-Q/V slot-type photonic crystal cavities. The dispersive coupling is based on a mode-gap photonic crystal cavities with light localization in an air mode with 0.02(lambda/n)3 modal volumes while preserving optical cavity Q up to 5 x 106. The mechanical mode is modeled to have fundamental resonance omega_m/2pi of 460 MHz and a quality factor Qm estimated at 12,000. For this slot-type optomechanical cavity, the dispersive coupling gom is numerically computed at up to 940 GHz/nm (Lom of 202 nm) for the fundamental optomechanical mode. Dynamical parametric oscillations for both cooling and amplification, in the resolved and unresolved sideband limit, are examined numerically, along with the displacement spectral density and cooling rates for the various operating parameters.
We study theoretically optomechanical interactions in a semiconductor microcavity with embedded quantum well under the optical pumping by a Bessel beam, carrying a non-zero orbital momentum. Due to the transfer of orbital momentum from light to phonons, the microcavity can act as an acoustic circulator: it rotates the propagation direction of the incident phonon by a certain angle clockwise or anticlockwise. Due to the optomechanical heating and cooling effects, the circulator can also function as an acoustic laser emitting sound with nonzero angular momentum. Our calculations demonstrate the potential of semiconductor microcavities for compact integrable optomechanical devices.