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Register a new userAnomalous Nernst and Righi-Leduc effects in Mn$_{3}$Sn: Berry curvature and entropy flow
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We present a study of electric, thermal and thermoelectric response in noncollinear antiferromagnet Mn$_{3}$Sn, which hosts a large Anomalous Hall Effect (AHE). Berry curvature generates off-diagonal thermal(Righi-Leduc) and thermoelectric(Nernst) signals, which are detectable at room temperature and invertible with a small magnetic field. The thermal and electrical Hall conductivities respect the Wiedemann-Franz law, implying that the transverse currents induced by Berry curvature are carried by Fermi surface quasi-particles. In contrast to conventional ferromagnets, the anomalous Lorenz number remains close to the Sommerfeld number over the whole temperature range of study, excluding any contribution by inelastic scattering and pointing to Berry curvature as the unique source of AHE. The anomalous off-diagonal thermo-electric and Hall conductivities are strongly temperature-dependent and their ratio is close to k$_{B}$/e.
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Noncollinear antiferromagnets with a D0$_{19}$ (space group = 194, P6$_{3}$/mmc) hexagonal structure have garnered much attention for their potential applications in topological spintronics. Here, we report the deposition of continuous epitaxial thin films of such a material, Mn$_{3}$Sn, and characterize their crystal structure using a combination of x-ray diffraction and transmission electron microscopy. Growth of Mn$_{3}$Sn films with both (0001) c-axis orientation and (40$bar{4}$3) texture is achieved. In the latter case, the thin films exhibit a small uncompensated Mn moment in the basal plane, quantified via magnetometry and x-ray magnetic circular dichroism experiments. This cannot account for the large anomalous Hall effect simultaneously observed in these films, even at room temperature, with magnitude $sigma_{mathrm{xy}}$ ($mu_{0}H$ = 0 T) = 21 $mathrm{Omega}^{-1}mathrm{cm}^{-1}$ and coercive field $mu_{0}H_{mathrm{C}}$ = 1.3 T. We attribute the origin of this anomalous Hall effect to momentum-space Berry curvature arising from the symmetry-breaking inverse triangular spin structure of Mn$_{3}$Sn. Upon cooling through the transition to a glassy ferromagnetic state at around 50 K, a peak in the Hall resistivity close to the coercive field indicates the onset of a topological Hall effect contribution, due to the emergence of a scalar spin chirality generating a real-space Berry phase. We demonstrate that the polarity of this topological Hall effect, and hence the chiral-nature of the noncoplanar magnetic structure driving it, can be controlled using different field cooling conditions.
In recent years, it has been shown that Berry curvature monopoles and dipoles play essential roles in the anomalous Hall effect and the nonlinear Hall effect respectively. In this work, we demonstrate that Berry curvature multipoles (the higher moments of Berry curvatures at the Fermi energy) can induce higher-order nonlinear anomalous Hall (NLAH) effect. Specifically, an AC Hall voltage perpendicular to the current direction emerges, where the frequency is an integer multiple of the frequency of the applied current. Importantly, by analyzing the symmetry properties of all the 3D and 2D magnetic point groups, we note that the quadrupole, hexapole and even higher Berry curvature moments can cause the leading-order frequency multiplication in certain materials. To provide concrete examples, we point out that the third-order NLAH voltage can be the leading-order Hall response in certain antiferromagnets due to Berry curvature quadrupoles, and the fourth-order NLAH voltage can be the leading response in the surface states of topological insulators induced by Berry curvature hexapoles. Our results are established by symmetry analysis, effective Hamiltonian and first-principles calculations. Other materials which support the higher-order NLAH effect are further proposed, including 2D antiferromagnets and ferromagnets, Weyl semimetals and twisted bilayer graphene near the quantum anomalous Hall phase.
The discovery of topological quantum materials represents a striking innovation in modern condensed matter physics with remarkable fundamental and technological implications. Their classification has been recently extended to topological Weyl semimetals, i.e., solid state systems which exhibit the elusive Weyl fermions as low-energy excitations. Here we show that the Nernst effect can be exploited as a sensitive probe for determining key parameters of the Weyl physics, applying it to the non-collinear antiferromagnet Mn$_3$Ge. This compound exhibits anomalous thermoelectric transport due to enhanced Berry curvature from Weyl points located extremely close to the Fermi level. We establish from our data a direct measure of the Berry curvature at the Fermi level and, using a minimal model of a Weyl semimetal, extract for the first time the Weyl point energy and their distance in momentum-space.
Mn$_{3}$X (X= Sn, Ge) are noncollinear antiferromagnets hosting a large anomalous Hall effect (AHE). Weyl nodes in the electronic dispersions are believed to cause this AHE, but their locus in the momentum space is yet to be pinned down. We present a detailed study of the Hall conductivity tensor and magnetization in Mn$_{3}$Sn crystals and find that in the presence of a moderate magnetic field, spin texture sets the orientation of the $k$-space Berry curvature with no detectable in-plane anisotropy due to the $Z_6$ symmetry of the underlying lattice. We quantify the energy cost of domain nucleation and show that the multidomain regime is restricted to a narrow field window. Comparing the field dependence of AHE and magnetization, we find that there is a distinct component in the AHE which does not scale with magnetization when the domain walls are erected. This so-called `topological Hall effect provides indirect evidence for a non-coplanar spin components and real-space Berry curvature in domain walls.
Dirac and Weyl semimetals display a host of novel properties. In Cd$_3$As$_2$, the Dirac nodes lead to a protection mechanism that strongly suppresses backscattering in zero magnetic field, resulting in ultrahigh mobility ($sim$ 10$^7$ cm$^2$ V$^{-1}$ s$^{-1}$). In applied magnetic field, an anomalous Nernst effect is predicted to arise from the Berry curvature associated with the Weyl nodes. We report observation of a large anomalous Nernst effect in Cd$_3$As$_2$. Both the anomalous Nernst signal and transport relaxation time $tau_{tr}$ begin to increase rapidly at $sim$ 50 K. This suggests a close relation between the protection mechanism and the anomalous Nernst effect. In a field, the quantum oscillations of bulk states display a beating effect, suggesting that the Dirac nodes split into Weyl states, allowing the Berry curvature to be observed as an anomalous Nernst effect.
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