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A conceptual difficulty in formulating the density functional theory of the fractional quantum Hall effect is that while in the standard approach the Kohn-Sham orbitals are either fully occupied or unoccupied, the physics of the fractional quantum Hall effect calls for fractionally occupied Kohn-Sham orbitals. This has necessitated averaging over an ensemble of Slater determinants to obtain meaningful results. We develop an alternative approach in which we express and minimize the grand canonical potential in terms of the composite fermion variables. This provides a natural resolution of the fractional-occupation problem because the fully occupied orbitals of composite fermions automatically correspond to fractionally occupied orbitals of electrons. We demonstrate the quantitative validity of our approach by evaluating the density profile of fractional Hall edge as a function of temperature and the distance from the delta dopant layer and showing that it reproduces edge reconstruction in the expected parameter region.
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A simple one-dimensional model is proposed, in which N spinless repulsively interacting fermions occupy M>N degenerate states. It is argued that the energy spectrum and the wavefunctions of this system strongly resemble the spectrum and wavefunctions of 2D electrons in the lowest Landau level (the problem of the Fractional Quantum Hall Effect). In particular, Laughlin-type wavefunctions describe ground states at filling factors v = N/M = 1(2m+1). Within this model the complimentary wavefunction for v = 1-1/(2m + 1) is found explicitly and extremely simple ground state wavefunctions for arbitrary odd-denominator filling factors are proposed.
We measure the chemical potential jump across the fractional gap in the low-temperature limit in the two-dimensional electron system of GaAs/AlGaAs single heterojunctions. In the fully spin-polarized regime, the gap for filling factor nu=1/3 increases LINEARLY with magnetic field and is coincident with that for nu=2/3, reflecting the electron-hole symmetry in the spin-split Landau level. In low magnetic fields, at the ground-state spin transition for nu=2/3, a correlated behavior of the nu=1/3 and nu=2/3 gaps is observed.
We directly measure the chemical potential jump in the low-temperature limit when the filling factor traverses the nu = 1/3 and nu = 2/5 fractional gaps in two-dimensional (2D) electron system in GaAs/AlGaAs single heterojunctions. In high magnetic fields B, both gaps are linear functions of B with slopes proportional to the inverse fraction denominator, 1/q. The fractional gaps close partially when the Fermi level lies outside. An empirical analysis indicates that the chemical potential jump for an IDEAL 2D electron system, in the highest accessible magnetic fields, is proportional to q^{-1}B^{1/2}.
We investigate the recently introduced geometric quench protocol for fractional quantum Hall (FQH) states within the framework of exactly solvable quantum Hall matrix models. In the geometric quench protocol a FQH state is subjected to a sudden change in the ambient geometry, which introduces anisotropy into the system. We formulate this quench in the matrix models and then we solve exactly for the post-quench dynamics of the system and the quantum fidelity (Loschmidt echo) of the post-quench state. Next, we explain how to define a spin-2 collective variable $hat{g}_{ab}(t)$ in the matrix models, and we show that for a weak quench (small anisotropy) the dynamics of $hat{g}_{ab}(t)$ agrees with the dynamics of the intrinsic metric governed by the recently discussed bimetric theory of FQH states. We also find a modification of the bimetric theory such that the predictions of the modified bimetric theory agree with those of the matrix model for arbitrarily strong quenches. Finally, we introduce a class of higher-spin collective variables for the matrix model, which are related to generators of the $W_{infty}$ algebra, and we show that the geometric quench induces nontrivial dynamics for these variables.
We study transport properties of a charge qubit coupling two chiral Luttinger liquids, realized by two antidots placed between the edges of an integer $ u=1$ or fractional $ u=1/3$ quantum Hall bar. We show that in the limit of a large capacitive coupling between the antidots, their quasiparticle occupancy behaves as a pseudo-spin corresponding to an orbital Kondo impurity coupled to a chiral Luttinger liquid, while the inter antidot tunnelling acts as an impurity magnetic field. The latter tends to destabilize the Kondo fixed point for the $ u=1/3$ fractional Hall state, producing an effective inter-edge tunnelling. We relate the inter-edge conductance to the susceptibility of the Kondo impurity and calculate it analytically in various limits for both $ u=1$ and $ u=1/3$.
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