We present the technical design for the SuperCDMS high-voltage, low-mass dark matter detectors, designed to be sensitive to dark matter down to 300 MeV/$c^2$ in mass and resolve individual electron-hole pairs from low-energy scattering events in high-purity Ge and Si crystals. In this paper we discuss some of the studies and technological improvements which have allowed us to design such a sensitive detector, including advances in phonon sensor design and detector simulation. With this design we expect to achieve better than 10 eV (5 eV) phonon energy resolution in our Ge (Si) detectors, and recoil energy resolution below 1eV by exploiting Luke-Neganov phonon generation of charges accelerated in high fields.
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