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Register a new userAtom-Based Sensing of Weak Radio Frequency Electric Fields Using Homodyne Readout
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We utilize a homodyne detection technique to achieve a new sensitivity limit for atom-based, absolute radio-frequency electric field sensing of $mathrm{5 mu V cm^{-1} Hz^{-1/2} }$. A Mach-Zehnder interferometer is used for the homodyne detection. With the increased sensitivity, we investigate the dominant dephasing mechanisms that affect the performance of the sensor. In particular, we present data on power broadening, collisional broadening and transit time broadening. Our results are compared to density matrix calculations. We show that photon shot noise in the signal readout is currently a limiting factor. We suggest that new approaches with superior readout with respect to photon shot noise are needed to increase the sensitivity further.
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Rydberg atom-based electrometry enables traceable electric field measurements with high sensitivity over a large frequency range, from gigahertz to terahertz. Such measurements are particularly useful for the calibration of radio frequency and terahertz devices, as well as other applications like near field imaging of electric fields. We utilize frequency modulated spectroscopy with active control of residual amplitude modulation to improve the signal to noise ratio of the optical readout of Rydberg atom-based radio frequency electrometry. Matched filtering of the signal is also implemented. Although we have reached similarly, high sensitivity with other read-out methods, frequency modulated spectroscopy is advantageous because it is well-suited for building a compact, portable sensor. In the current experiment, $sim 3 mu V cm^{-1}Hz^{-1/2}$ sensitivity is achieved and is found to be photon shot noise limited.
The ability to sensitively detect charges under ambient conditions would be a fascinating new tool benefitting a wide range of researchers across disciplines. However, most current techniques are limited to low-temperature methods like single-electron transistors (SET), single-electron electrostatic force microscopy and scanning tunnelling microscopy. Here we open up a new quantum metrology technique demonstrating precision electric field measurement using a single nitrogen-vacancy defect centre(NV) spin in diamond. An AC electric field sensitivity reaching ~ 140V/cm/surd Hz has been achieved. This corresponds to the electric field produced by a single elementary charge located at a distance of ~ 150 nm from our spin sensor with averaging for one second. By careful analysis of the electronic structure of the defect centre, we show how an applied magnetic field influences the electric field sensing properties. By this we demonstrate that diamond defect centre spins can be switched between electric and magnetic field sensing modes and identify suitable parameter ranges for both detector schemes. By combining magnetic and electric field sensitivity, nanoscale detection and ambient operation our study opens up new frontiers in imaging and sensing applications ranging from material science to bioimaging.
Developing the isolation and control of ultracold atomic systems to the level of single quanta has led to significant advances in quantum sensing, yet demonstrating a quantum advantage in real world applications by harnessing entanglement remains a core task. Here, we realize a many-body quantum-enhanced sensor to detect weak displacements and electric fields using a large crystal of $sim 150$ trapped ions. The center of mass vibrational mode of the crystal serves as high-Q mechanical oscillator and the collective electronic spin as the measurement device. By entangling the oscillator and the collective spin before the displacement is applied and by controlling the coherent dynamics via a many-body echo we are able to utilize the delicate spin-motion entanglement to map the displacement into a spin rotation such that we avoid quantum back-action and cancel detrimental thermal noise. We report quantum enhanced sensitivity to displacements of $8.8 pm 0.4~$dB below the standard quantum limit and a sensitivity for measuring electric fields of $240pm10~mathrm{nV}mathrm{m}^{-1}$ in $1$ second ($240~mathrm{nV}mathrm{m}^{-1}/sqrt{mathrm{Hz}}$).
Developing fast, accurate and scalable techniques for quantum state readout is an active area in semiconductor-based quantum computing. Here, we present results on dispersive sensing of silicon corner state quantum dots coupled to lumped-element electrical resonators via the gate. The gate capacitance of the quantum device is configured in parallel with a superconducting spiral inductor resulting in resonators with loaded Q-factors in the 400-800 range. For a resonator operating at 330 MHz, we achieve a charge sensitivity of 7.7 $mu$e$/sqrt{text{Hz}}$ and, when operating at 616 MHz, we get 1.3 $mu$e$/sqrt{text{Hz}}$. We perform a parametric study of the resonator to reveal its optimal operation points and perform a circuit analysis to determine the best resonator design. The results place gate-based sensing at par with the best reported radio-frequency single-electron transistor sensitivities while providing a fast and compact method for quantum state readout.
We propose a new scalable architecture for trapped ion quantum computing that combines optical tweezers delivering qubit state-dependent local potentials with oscillating electric fields. Since the electric field allows for long-range qubit-qubit interactions mediated by the center-of-mass motion of the ion crystal alone, it is inherently scalable to large ion crystals. Furthermore, our proposed scheme does not rely on either ground state cooling or the Lamb-Dicke approximation. We study the effects of imperfect cooling of the ion crystal, as well as the role of unwanted qubit-motion entanglement, and discuss the prospects of implementing the state-dependent tweezers in the laboratory.
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