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Register a new userMeasurement of light diffusion in ZnO nanowire forests
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Optimum design of efficient nanowire solar cells requires better understanding of light diffusion in a nanowire array. Here we demonstrate that our recently developed ultrafast all-optical shutter can be used to directly measure the dwell time of light in a nanowire array. Our measurements on disordered ZnO nanowire arrays, nanowire forests, indicate that the photon mean free path and the dwell time of light can be well predicted from SEM images.
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Current voltage and Kelvin Probe Force Microscopy (KPFM) measurements were performed on single ZnO nanowires. Measurements are shown to be strongly correlated with the contact behavior, either ohmic or Schottky. The ZnO nanowires were obtained by metallo-organic chemical vapor deposition (MOCVD) and contacted using electronic-beam lithography. Depending on the contact geometry, good quality ohmic contacts (linear I V behavior) or non-linear (diode like) Schottky contacts were obtained. Current voltage and KPFM measurements on both types of contacted ZnO nanowires were performed in order to investigate their behavior. A clear correlation could be established between the I V curve, the electrical potential profile along the device and the nanowire geometry. Some arguments supporting this behavior are given based on a depleted region extension. This work will help to better understand the electrical behavior of ohmic contacts on single ZnO nanowires, for future applications in nanoscale field effect-transistors and nano-photodetectors.
Spectral diffusion is the phenomenon of random jumps in the emission wavelength of narrow lines. This phenomenon is a major hurdle for applications of solid state quantum emitters like quantum dots, molecules or diamond defect centers in an integrated quantum optical technology. Here, we provide further insight into the underlying processes of spectral diffusion of the zero phonon line of single nitrogen vacancy centers in nanodiamonds by using a novel method based on photon correlation interferometry. The method works although the spectral diffusion rate is several orders of magnitude higher than the photon detection rate and thereby improves the time resolution of previous experiments with nanodiamonds by six orders of magnitude. We study the dependency of the spectral diffusion rate on the excitation power, temperature, and excitation wavelength under off-resonant excitation. Our results suggest a strategy to increase the number of spectrally indistinguishable photons emitted by diamond nanocrystals.
The optical response of a coupled nanowire dimer is studied using a fully quantum mechanical approach. The translational invariance of the system allows to apply the time--dependent density functional theory for the plasmonic dimer with the largest size considered so far in quantum calculations. Detailed comparisons with results from classical electromagnetic calculations based on local and non local hydrodynamic response, as well as with results of the recently developed quantum corrected model is performed. We show that electron tunneling and dynamical screening are the major nonlocal quantum effects determining the plasmonic modes and field enhancement in the system. Account for the electron tunneling at small junction sizes allows semi-quantitative description of quantum results within classical framework. We also discuss the shortcomings of classical treatments using non-local dielectric permittivities based on hydrodynamic models. Finally, the implications of the actual position of the screening charge density for the plasmon ruler applications are demonstrated.
We integrate about 100 single Cadmium Selenide semiconductor nanowires in self-standing Silicon Nitride photonic crystal cavities in a single processing run. Room temperature measurements reveal a single narrow emission linewidth, corresponding to a Q-factor as large as 5000. By varying the structural parameters of the photonic crystal, the peak wavelength is tuned, thereby covering the entire emission spectral range of the active material. A very large spectral range could be covered by heterogeneous integration of different active materials.
Semiconductor nanowires offer great potential for realizing broadband photodetectors that are compatible with silicon technology. However, the spectral range of such detectors has so far been limited to selected regions in the ultraviolet, visible and near infrared. Here, we report on broadband nanowire heterostructure array photodetectors exhibiting a photoresponse from the visible to long-wavelength infrared. In particular, the infrared response from 3-20 um is enabled by normal incidence excitation of intersubband transitions in low-bandgap InAsP quantum discs synthesized axially within InP nanowires. The optical characteristics are explained by the excitation of the longitudinal component of optical modes in the photonic crystal formed by the nanostructured portion of the detectors, combined with a non-symmetric potential profile of the discs resulting from synthesis. Our results provide a generalizable insight into how broadband nanowire photodetectors may be designed, and how engineered nanowire heterostructures open up new fascinating opportunities for optoelectronics.
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