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Register a new userComparative study of phonon spectrum and thermal expansion of graphene, silicene, germanene and blue phosphorene
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Based on first-principles calculation using density functional theory, we study the vibrational properties and thermal expansion of mono-atomic two-dimensional honeycomb lattices: graphene, silicene, germanene and blue phosphorene. We focus on the similarities and differences of their properties, and try to understand them from their lattice structures. We illustrate that, from graphene to blue phosphorene, phonon bandgap develops due to large buckling-induced mixing of the in-plane and out-of-plane phonon modes. This mixing also influences their thermal properties. Using quasi-harmonic approximation, we find that all of them show negative thermal expansion at room temperature.
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We model Raman processes in silicene and germanene involving scattering of quasiparticles by, either, two phonons, or, one phonon and one point defect. We compute the resonance Raman intensities and lifetimes for laser excitations between 1 and 3$,$eV using a newly developed third-nearest neighbour tight-binding model parametrized from first principles density functional theory. We identify features in the Raman spectra that are unique to the studied materials or the defects therein. We find that in silicene, a new Raman resonance arises from the $2.77,rm$eV $pi-sigma$ plasmon at the M point, measurably higher than the Raman resonance originating from the $2.12,rm$eV $pi$ plasmon energy. We show that in germanene, the lifetimes of charge carriers, and thereby the linewidths of the Raman peaks, are influenced by spin-orbit splittings within the electronic structure. We use our model to predict scattering cross sections for defect induced Raman scattering involving adatoms, substitutional impurities, Stone-Wales pairs, and vacancies, and argue that the presence of each of these defects in silicene and germanene can be qualitatively matched to specific features in the Raman response.
Using a gold (111) surface as a substrate we have grown in situ by molecular beam epitaxy an atom-thin, ordered, two-dimensional multi-phase film. Its growth bears strong similarity with the formation of silicene layers on silver (111) templates. One of the phases, forming large domains, as observed in Scanning Tunneling Microscopy, shows a clear, nearly flat, honeycomb structure. Thanks to thorough synchrotron radiation core-level spectroscopy measurements and advanced Density Functional Theory calculations we can identify it to a $sqrt{3}$x$sqrt{3}$R(30{deg}) germanene layer in coincidence with a $sqrt{7}$x$sqrt{7}$R(19.1{deg}) Au(111) supercell, thence, presenting the first compelling evidence of the birth of a novel synthetic germanium-based cousin of graphene.
We report first-principles calculations of the phonon dispersion spectrum, thermal expansion, and heat capacity of uranium dioxide. The so-called direct method, based on the quasiharmonic approximation, is used to calculate the phonon frequencies within a density functional framework for the electronic structure. The phonon dispersions calculated at the theoretical equilibrium volume agree well with experimental dispersions. The computed phonon density of states (DOS) compare reasonably well with measurement data, as do also the calculated frequencies of the Raman and infrared active modes including the LO/TO splitting. To study the pressure dependence of the phonon frequencies we calculate phonon dispersions for several lattice constants. Our computed phonon spectra demonstrate the opening of a gap between the optical and acoustic modes induced by pressure. Taking into account the phonon contribution to the total free energy of UO$_2$ its thermal expansion coefficient and heat capacity have been {it ab initio} computed. Both quantities are in good agreement with available experimental data for temperatures up to about 500 K.
We propose a guideline for exploring substrates that stabilize the monolayer honeycomb structure of silicene and germanene while simultaneously preserve the Dirac states: in addition to have a strong binding energy to the monolayer, a suitable substrate should be a large-gap semiconductor with a proper workfunction such that the Dirac point lies in the gap and far from the substrate states when their bands align. We illustrate our idea by performing first-principles calculations for silicene and germanene on the Al-terminated (0001) surface of Al2O3 . The overlaid monolayers on Al-terminated Al2O3(0001) retain the main structural profile of the low-buckled honeycomb structure via a binding energy comparable to the one between silicene and Ag(111). Unfolded band structure derived from the k-projection method reveals that gapped Dirac cone is formed at the K point due to the structural distortion and the interaction with the substrate. The gaps of 0.4 eV and 0.3 eV respectively for the supported silicene and germanene suggest that they may have potential applications in nanoelectronics.
We present first-principles calculations of silicene/graphene and germanene/graphene bilayers. Various supercell models are constructed in the calculations in order to reduce the strain of the lattice-mismatched bilayer systems. Our energetics analysis and electronic structure results suggest that graphene can be used as a substrate to synthesize monolayer silicene and germanene. Multiple phases of single crystalline silicene and germanene with different orientations relative to the substrate could coexist at room temperature. The weak interaction between the overlayer and the substrate preserves the low-buckled structure of silicene and germanene, as well as their linear energy bands. The gap induced by breaking the sublattice symmetry in silicene on graphene can be up to 57 meV.
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