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BiTeCl and BiTeBr: a comparative high-pressure optical study

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 Added by Iris Crassee
 Publication date 2016
  fields Physics
and research's language is English




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We here report a detailed high-pressure infrared transmission study of BiTeCl and BiTeBr. We follow the evolution of two band transitions: the optical excitation $beta$ between two Rashba-split conduction bands, and the absorption $gamma$ across the band gap. In the low pressure range, $p< 4$~GPa, for both compounds $beta$ is approximately constant with pressure and $gamma$ decreases, in agreement with band structure calculations. In BiTeCl, a clear pressure-induced phase transition at 6~GPa leads to a different ground state. For BiTeBr, the pressure evolution is more subtle, and we discuss the possibility of closing and reopening of the band gap. Our data is consistent with a Weyl phase in BiTeBr at 5$-$6~GPa, followed by the onset of a structural phase transition at 7~GPa.



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193 - A. Akrap , J. Teyssier , A. Magrez 2014
We present a comparative study of the optical properties - reflectance, transmission and optical conductivity - and Raman spectra of two layered bismuth-tellurohalides BiTeBr and BiTeCl at 300 K and 5 K, for light polarized in the a-b planes. Despite different space groups, the optical properties of the two compounds are very similar. Both materials are doped semiconductors, with the absorption edge above the optical gap which is lower in BiTeBr (0.62 eV) than in BiTeCl (0.77 eV). The same Rashba splitting is observed in the two materials. A non-Drude free carrier contribution in the optical conductivity, as well as three Raman and two infrared phonon modes, are observed in each compound. There is a dramatic difference in the highest infrared phonon intensity for the two compounds, and a difference in the doping levels. Aspects of the strong electron-phonon interaction are identified. Several interband transitions are assigned, among them the low-lying absorption $beta$ which has the same value 0.25 eV in both compounds, and is caused by the Rashba spin splitting of the conduction band. An additional weak transition is found in BiTeCl, caused by the lower crystal symmetry.
High pressure Raman experiments on Boron Nitride multi-walled nanotubes show that the intensity of the vibrational mode at ~ 1367 cm-1 vanishes at ~ 12 GPa and it does not recover under decompression. In comparison, the high pressure Raman experiments on hexagonal Boron Nitride show a clear signature of a phase transition from hexagonal to wurtzite at ~ 13 GPa which is reversible on decompression. These results are contrasted with the pressure behavior of carbon nanotubes and graphite.
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