No Arabic abstract
A current challenge in the field of magnetoelectric multiferroics is to identify systems that allow a controlled tuning of states displaying distinct magnetoelectric responses. Here we show that the multiferroic ground state of the archetypal multiferroic TbMnO3 is dramatically modified by epitaxial strain. Neutron diffraction reveals that in highly strained films the magnetic order changes from the bulk-like incommensurate bc-cycloidal structure to commensurate magnetic order. Concomitant with the modification of the magnetic ground state, optical second-harmonic generation (SHG) and electric measurements show an enormous increase of the ferroelectric polarization, and a change in its direction from along the c- to the a-axis. Our results suggest that the drastic change of multiferroic properties results from a switch of the spin-current magnetoelectric coupling in bulk TbMnO3 to symmetric magnetostriction in epitaxially-strained TbMnO3. These findings experimentally demonstrate that epitaxial strain can be used to control single-phase spin-driven multiferroic states.
Understanding of the metal-insulator transition (MIT) in correlated transition-metal oxides is a fascinating topic in condensed matter physics and a precise control of such transitions plays a key role in developing novel electronic devices. Here we report an effective tuning of the MIT in epitaxial SrVO3 (SVO) films by expanding the out-of-plane lattice constant without changing in-plane lattice parameters, through helium ion irradiation. Upon increase of the ion fluence, we observe a MIT with a crossover from metallic to insulating state in SVO films. A combination of transport and magnetoresistance measurements in SVO at low temperatures reveals that the observed MIT is mainly ascribed to electron-electron interactions rather than disorder-induced localization. Moreover, these results are well supported by the combination of density functional theory and dynamical mean field theory (DFT+DMFT) calculations, further confirming the decrease of the bandwidth and the enhanced electron-electron interactions resulting from the expansion of out-of-plane lattice constant. These findings provide new insights into the understanding of MIT in correlated oxides and perspectives for the design of unexpected functional devices based on strongly correlated electrons.
We have combined neutron scattering and piezoresponse force microscopy to study the relation between the exchange bias observed in CoFeB/BiFeO3 heterostructures and the multiferroic domain structure of the BiFeO3 films. We show that the exchange field scales with the inverse of the ferroelectric and antiferromagnetic domain size, as expected from Malozemoffs model of exchange bias extended to multiferroics. Accordingly, polarized neutron reflectometry reveals the presence of uncompensated spins in the BiFeO3 film at the interface with the CoFeB. In view of these results we discuss possible strategies to switch the magnetization of a ferromagnet by an electric field using BiFeO3.
Recent works have shown that the domain walls of room-temperature multiferroic BiFeO3 (BFO) thin films can display distinct and promising functionalities. It is thus important to understand the mechanisms underlying domain formation in these films. High-resolution x-ray diffraction and piezo-force microscopy, combined with first-principles simulations, have allowed us to characterize both the atomic and domain structure of BFO films grown under compressive strain on (001)-SrTiO3, as a function of thickness. We derive a twining model that describes the experimental observations and explains why the 71o domain walls are the ones commonly observed in these films. This understanding provides us with a new degree of freedom to control the structure and, thus, the properties of BiFeO3 thin films.
We measured the temperature dependent infrared reflectivity spectra of TbMnO3 with the electric field of light polarized along each of the three crystallographic axes. We analyzed the effect, on the phonon spectra, of the different phase transitions occurring in this material. We show that the antiferromagnetic transition at TN renormalizes the phonon parameters along the three directions. Our data indicate that the electromagnon, observed along the a direction, has an important contribution to the building of the dielectric constant. Only one phonon, observed along the c-axis, has anomalies at the ferroelectric transition. This phonon is built mostly from Mn vibrations, suggesting that Mn displacements are closely related to the formation of the ferroelectric order.
Artificially engineered superlattices were designed and fabricated to induce different growth mechanisms and structural characteristics. DC sputtering was used to grow ferromagnetic (La$_{0.8}$Ba$_{0.2}$MnO$_3$) / ferroelectric (Ba$_{0.25}$Sr$_{0.75}$TiO$_3$ or BaTiO$_3$) superlattices. We systematically modified the thickness of the ferromagnetic layer to analyze dimensional and structural effects on the superlattices with different structural characteristics. The crystalline structure was characterized by X-Ray diffraction and transmission electron microscopy. The magnetic and electronic properties were investigated by SQUID magnetometry and resistance measurements. The results show that both strain and structural disorder can significantly affect the physical properties of the systems. Compressive strain tends to increase the competition between the magnetic interactions decreasing the ferromagnetism of the samples and the localization of the charge carrier through the electron-phonon interaction. Tensile strain reduces the charge carrier localization, increasing the ferromagnetic transition temperature. Structural defects have a stronger influence on the magnetic properties than on the transport properties, reducing the ferromagnetic transition temperature while increasing the magnetic hardness of the superlattices. These results help to further understand the role of strain and interface effects in the magnetic and transport properties of manganite based multiferroic systems.