No Arabic abstract
The ability to manipulate plasmons is driving new developments in electronics, optics, sensing, energy, and medicine. Despite the massive momentum of experimental research in this direction, a predictive quantum-mechanical framework for describing electron-plasmon interactions in real materials is still missing. Here, starting from a many-body Greens function approach, we develop an ab initio approach for investigating electron-plasmon coupling in solids. As a first demonstration of this methodology, we show that electron-plasmon scattering is the primary mechanism for the cooling of hot carriers in doped silicon, it is key to explain measured electron mobilities at high doping, and it leads to a quantum zero-point renormalization of the band gap in agreement with experiment.
We report the first angle-resolved photoemission measurement of the wave-vector dependent plasmon satellite structure of a three-dimensional solid, crystalline silicon. In sharp contrast to nanomaterials, which typically exhibit strongly wave-vector dependent, low-energy plasmons, the large plasmon energy of silicon facilitates the search for a plasmaron state consisting of resonantly bound holes and plasmons and its distinction from a weakly interacting plasmon-hole pair. Employing a first-principles theory, which is based on a cumulant expansion of the one-electron Greens function and contains significant electron correlation effects, we obtain good agreement with the measured photoemission spectrum for the wave-vector dependent dispersion of the satellite feature, but without observing the existence of plasmarons in the calculations.
We generalize the Wannier interpolation of the electron-phonon matrix elements to the case of polar-optical coupling in polar semiconductors. We verify our methodological developments against experiments, by calculating the widths of the electronic bands due to electron-phonon scattering in GaAs, the prototype polar semiconductor. The calculated widths are then used to estimate the broadenings of excitons at critical points in GaAs and the electron-phonon relaxation times of hot electrons. Our findings are in good agreement with available experimental data. Finally, we demonstrate that while the Frohlich interaction is the dominant scattering process for electrons/holes close to the valley minima, in agreement with low-field transport results, at higher energies, the intervalley scattering dominates the relaxation dynamics of hot electrons or holes. The capability of interpolating the polar-optical coupling opens new perspectives in the calculation of optical absorption and transport properties in semiconductors and thermoelectrics.
We report the observation of photo-induced plasmon-phonon coupled modes in the group IV-VI semiconductor PbTe using Fourier-transform inelastic X-ray scattering at the Linac Coherent Light Source (LCLS). We measure the near-zone-center dispersion of the heavily screened longitudinal optical (LO) phonon branch as extracted from differential changes in x-ray diffuse scattering intensity following above band gap photoexcitation.
The control of spins and spin to charge conversion in organics requires understanding the molecular spin-orbit coupling (SOC), and a means to tune its strength. However, quantifying SOC strengths indirectly through spin relaxation effects has proven diffi- cult due to competing relaxation mechanisms. Here we present a systematic study of the g-tensor shift in molecular semiconductors and link it directly to the SOC strength in a series of high mobility molecular semiconductors with strong potential for future devices. The results demonstrate a rich variability of the molecular g-shifts with the effective SOC, depending on subtle aspects of molecular composition and structure. We correlate the above g -shifts to spin-lattice relaxation times over four orders of magnitude, from 200 {mu}s to 0.15 {mu}s, for isolated molecules in solution and relate our findings for isolated molecules in solution to the spin relaxation mechanisms that are likely to be relevant in solid state systems.
We present first-principles calculations of the coupling of quasiparticles to spin fluctuations in iron selenide and discuss which types of superconducting instabilities this coupling gives rise to. We find that strong antiferromagnetic stripe-phase spin fluctuations lead to large coupling constants for superconducting gaps with $s_pm$-symmetry, but these coupling constants are significantly reduced by other spin fluctuations with small wave vectors. An accurate description of this competition and an inclusion of band structure and Stoner parameter renormalization effects lead to a value of the coupling constant for an $s_pm$-symmetric gap which can produce a superconducting transition temperature consistent with experimental measurements.