No Arabic abstract
We find an unambiguous relationship between disorder-driven features in the temperature dependence of the resistance and the behavior, as functions of the temperature, of the parameters necessary to describe some of the relaxation processes in the photoinduced differential time-resolved reflectivity of three samples of Nd$_{1.83}$Ce$_{0.17}$CuO$_{4pmdelta}$. The latter, sharing the same Ce content, have been fabricated and annealed ad-hoc in order to differ only for the degree of disorder, mainly related to oxygen content and location, and, consequently, for the temperature dependence of the resistance: two of them present a minimum in the resistance and behave as a superconductor and as a metal, respectively, the third behaves as an insulator. The systematic coherence between the resistance and the relaxation parameters behaviors in temperature for all three samples is absolutely remarkable and shows that pump-probe measurements can be extremely sensitive to disorder as it drives the emergence of new excitations and of the related relaxation channels as in this paradigmatic case.
Nd$_{2-x}$Ce$_x$CuO$_{4pmdelta}$ (NCCO) epitaxial thin films have been deposited on (100) SrTiO$_3$ substrates by DC sputtering technique in different atmosphere. The as-grown samples show different dependence of the in-plane resistivity at low temperature, when they are grown in pure argon atmosphere or in oxygen. Moreover, an unusual behaviour is also found when transport takes place in the presence of an external magnetic field. It is commonly accepted that the higher anisotropic properties of NCCO crystalline cell with respect to the hole doped YBCO and LSCO and the electric conduction mainly confined in the CuO$_2$ plane, strongly support the two-dimensional (2D) character of the current transport in this system. Results on the temperature dependence of the resistance, as well as on the magnetoresistance and the Hall coefficient, obtained on epitaxial NCCO thin films in the over-doped region ($xge0.15$) of the phase diagram are presented and discussed.
The newly found superconductivity in infinite-layer nickelate superconducting films has attracted much attention, because their crystalline and electronic structures are similar to high-$T_c$ cuprate superconductors. The upper critical field can provide much information on superconductivity, but detailed experimental data are still lacking in these films. Here we present temperature and angle dependence of resistivity measured under different magnetic fields ($H$) in Nd$_{0.8}$Sr$_{0.2}$NiO$_{2}$ thin films. The onset superconducting transition occurs at about 16.2 K at 0 T. Temperature dependent upper critical fields determined by using a criterion very close to the onset transition show a clear negative curvature near the critical transition temperature, which is explained as the consequence of the paramagnetically limited effect on superconductivity. The temperature dependent anisotropy of the upper critical field is obtained from resistivity data, which yields a value decreasing from 3 to 1.2 with lowering temperature. This can be explained by a variable contribution from the orbital limit effect on upper critical field. The angle dependent resistivity at a fixed temperature and different magnetic fields cannot be scaled to one curve, which deviates from the prediction of the anisotropic Ginzburg-Landau theory. However, at low temperatures, the increased resistivity by magnetic field can be scaled by the parameter $H^beta |costheta|$ ($1<beta<6$) with $theta$ the angle enclosed between $c$-axis and the applied magnetic field. As the first detailed study on the upper critical field of the nickelate thin films, our results clearly indicate a small anisotropy and paramagnetically limited effect of superconductivity in nickelate superconductors.
In this article, we studied the role of oxygen in Pr$_{2}$CuO$_{4pmdelta}$ thin films fabricated by polymer assisted deposition method. The magnetoresistance and Hall resistivity of Pr$_{2}$CuO$_{4pmdelta}$ samples were systematically investigated. It is found that with decreasing the oxygen content, the low-temperature Hall coefficient ($R_H$) and magnetoresistance change from negative to positive, similar to those with the increase of Ce-doped concentration in R$_{2-x}$Ce$_{x}$CuO$_{4}$ (R= La, Nd, Pr, Sm, Eu). In addition, $T_c$ versus $R_H$ for both Pr$_{1-x}$LaCe$_{x}$CuO$_{4}$ and Pr$_{2}$CuO$_{4pmdelta}$ samples can coincide with each other. We conclude that the doped electrons induced by the oxygen removal are responsible for the superconductivity of $T^prime$-phase parent compounds.
Various Fe-vacancy orders have been reported in tetragonal Fe1-xSe single crystals and nanowires/nanosheets, which are similar to those found in alkali metal intercalated A1-xFe2-ySe2 superconductors. Here we report the in-situ angle-resolved photoemission spectroscopy study of Fe-vacancy disordered and ordered phases in FeSe multi-layer thin films grown by molecular beam epitaxy. Low temperature annealed FeSe films are identified to be Fe-vacancy disordered phase and electron doped. Further long-time low temperature anneal can change the Fe-vacancy disordered phase to ordered phase, which is found to be semiconductor/insulator with (root 5) x (root 5) superstructure and can be reversely changed to disordered phase with high temperature anneal. Our results reveal that the disorder-order transition in FeSe thin films can be simply tuned by vacuum anneal and the (root 5) x (root 5) Fe-vacancy ordered phase is more likely the parent phase of FeSe.
Measurements of electrical resistivity were performed between 3 and 300 K at various pressures up to 2.8 GPa on the BiS2-based superconductors LnO0.5F0.5BiS2 (Ln = Pr, Nd). At lower pressures, PrO0.5F0.5BiS2 and NdO0.5F0.5BiS2 exhibit superconductivity with critical temperatures Tc of 3.5 and3.9 K, respectively. As pressure is increased, both compounds undergo a transition at a pressure Pt from a low Tc superconducting phase to a high Tc superconducting phase in which Tc reaches maximum values of 7.6 and 6.4 K for PrO0.5F0.5BiS2 and NdO0.5F0.5BiS2, respectively. The pressure-induced transition is characterized by a rapid increase in Tc within a small range in pressure of ~0.3 GPa for both compounds. In the normal state of PrO0.5F0.5BiS2, the transition pressure Pt correlates with the pressure where the suppression of semiconducting behaviour saturates. In the normal state of NdO0.5F0.5BiS2, Pt is coincident with a semiconductor-metal transition. This behaviour is similar to the results recently reported for the LnO0.5F0.5BiS2 (Ln = La, Ce) compounds. We observe that Pt and the size of the jump in Tc between the two superconducting phases both scale with the lanthanide element in LnO0.5F0.5BiS2 (Ln = La, Ce, Pr, Nd).