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Register a new userWeak de-localization in graphene on a ferromagnetic insulating film
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Graphene has been predicted to develop a magnetic moment by proximity effect when placed on a ferromagnetic film, a promise that could open exciting possibilities in the fields of spintronics and magnetic data recording. In this work, we study in detail the interplay between the magnetoresistance of graphene and the magnetization of an underlying ferromagnetic insulating film. A clear correlation between both magnitudes is observed but we find, through a careful modelling of the magnetization and the weak localization measurements, that such correspondence can be explained by the effects of the magnetic stray fields arising from the ferromagnetic insulator. Our results emphasize the complexity arising at the interface between magnetic and two-dimensional materials.
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We show how the weak field magneto-conductance can be used as a tool to characterize epitaxial graphene samples grown from the C or the Si face of Silicon Carbide, with mobilities ranging from 120 to 12000 cm^2/(V.s). Depending on the growth conditions, we observe anti-localization and/or localization which can be understood in term of weak-localization related to quantum interferences. The inferred characteristic diffusion lengths are in agreement with the scanning tunneling microscopy and the theoretical model which describe the pure mono-layer and bilayer of graphene [MacCann et al,. Phys. Rev. Lett. 97, 146805 (2006)].
We induce surface carrier densities up to $sim7cdot 10^{14}$cm$^{-2}$ in few-layer graphene devices by electric double layer gating with a polymeric electrolyte. In 3-, 4- and 5-layer graphene below 20-30K we observe a logarithmic upturn of resistance that we attribute to weak localization in the diffusive regime. By studying this effect as a function of carrier density and with ab-initio calculations we derive the dependence of transport, intervalley and phase coherence scattering lifetimes on total carrier density. We find that electron-electron scattering in the Nyquist regime is the main source of dephasing at temperatures lower than 30K in the $sim10^{13}$cm$^{-2}$ to $sim7 cdot 10^{14}$cm$^{-2}$ range of carrier densities. With the increase of gate voltage, transport elastic scattering is dominated by the competing effects due to the increase in both carrier density and charged scattering centers at the surface. We also tune our devices into a crossover regime between weak and strong localization, indicating that simultaneous tunability of both carrier and defect density at the surface of electric double layer gated materials is possible.
An improved method for characterizing the magnetic anisotropy of films with cubic symmetry is described and is applied to an yttrium iron garnet (111) film. Analysis of the FMR spectra performed both in-plane and out-of-plane from 0.7 to 8 GHz yielded the magnetic anisotropy constants as well as the saturation magnetization. The field at which FMR is observed turns out to be quite sensitive to anisotropy constants (by more than a factor ten) in the low frequency (< 2 GHz) regime and when the orientation of the magnetic field is nearly normal to the sample plane; the restoring force on the magnetization arising from the magnetocrystalline anisotropy fields is then comparable to that from the external field, thereby allowing the anisotropy constants to be determined with greater accuracy. In this region, unusual dynamical behaviors are observed such as multiple resonances and a switching of FMR resonance with only a 1 degree change in field orientation at 0.7 GHz.
The Talbot effect has been known in optics since XIX century and found various technological applications. In this paper, we demonstrate with the help of micromagnetic simulations this self-imaging phenomenon for spin waves propagating in a thin ferromagnetic film magnetized out-of-plane. We show that the main features of the obtained Talbot carpets for spin waves can be described, to a large extent, by the approximate analytical formulas yielded by the general analysis of the wave phenomena. Our results indicate a route to a feasible experimental realisation of the Talbot effect at low and high frequencies and offer interesting effects and possible applications in magnonics.
We demonstrate theoretically the possibility of spinodal de-wetting in heterostructures made of light--atom liquids (hydrogen, helium, and nitrogen) deposited on suspended graphene. Extending our theory of film growth on two-dimensional materials to include analysis of surface instabilities via the hydrodynamic Cahn--Hilliard-type equation, we characterize in detail the resulting spinodal de-wetting patterns. Both linear stability analysis and advanced computational treatment of the surface hydrodynamics show micron-sized (generally material and atom dependent) patterns of dry regions. The physical reason for the development of such instabilities on graphene can be traced back to the inherently weak van der Waals interactions between atomically thin materials and atoms in the liquid. Similar phenomena occur in doped graphene and other two-dimensional materials, such as monolayer dichalcogenides. Thus two-dimensional materials represent a universal theoretical and technological platform for studies of spinodal de-wetting.
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