Time resolved intensity cross-correlation measurements of radiative cascades are used for studying non-radiative relaxation processes of excited carriers confined in semiconductor quantum dots. We spectrally identify indirect radiative cascades which include intermediate phonon assisted relaxations. The energy of the first photon reveals the multicarrier configuration prior to the non-radiative relaxation, while the energy of the second photon reveals the configuration after the relaxation. The intensity cross correlation measurements thus provide quantitative measures of the non-radiative processes and their selection rules. We construct a model which accurately describes the experimental observations in terms of the electron-phonon and electron-hole exchange interactions. Our measurements and model provide a new tool for engineering relaxation processes in semiconductor nanostructures.
State-of-the-art quantum key distribution systems are based on the BB84 protocol and single photons generated by lasers. These implementations suffer from range limitations and security loopholes, which require expensive adaptation. The use of polarization entangled photon pairs substantially alleviates the security threads while allowing for basically arbitrary transmission distances when embedded in quantum repeater schemes. Semiconductor quantum dots are capable of emitting highly entangled photon pairs with ultra-low multi-pair emission probability even at maximum brightness. Here we report on the first implementation of the BBM92 protocol using a quantum dot source with an entanglement fidelity as high as 0.97(1). For a proof of principle, the key generation is performed between two buildings, connected by 350 metre long fiber, resulting in an average key rate of 135 bits/s and a qubit error rate of 0.019 over a time span of 13 hours, without resorting to time- or frequency-filtering techniques. Our work demonstrates the viability of quantum dots as light sources for entanglement-based quantum key distribution and quantum networks. By embedding them in state-of-the-art photonic structures, key generation rates in the Gbit/s range are at reach.
We introduce an integrability-based method enabling the study of semiconductor quantum dot models incorporating both the full hyperfine interaction as well as a mean-field treatment of dipole-dipole interactions in the nuclear spin bath. By performing free induction decay and spin echo simulations we characterize the combined effect of both types of interactions on the decoherence of the electron spin, for external fields ranging from low to high values. We show that for spin echo simulations the hyperfine interaction is the dominant source of decoherence at short times for low fields, and competes with the dipole-dipole interactions at longer times. On the contrary, at high fields the main source of decay is due to the dipole-dipole interactions. In the latter regime an asymmetry in the echo is observed. Furthermore, the non-decaying fraction previously observed for zero field free induction decay simulations in quantum dots with only hyperfine interactions, is destroyed for longer times by the mean-field treatment of the dipolar interactions.
We investigate the temperature dependence of photon coherence properties through two photon interference (TPI) measurements from a single QD under resonant excitation. We show that the loss of indistinguishability is only related to the electron-phonon coupling without being affected by spectral diffusion. Through these measurements, and a complementary microscopic theory, we identify two independent separate decoherence processes each associated to phonons. Below 10K, we find that the relaxation of the vibrational lattice is the dominant contribution to the loss of TPI visibility. This process is non-Markovian in nature, and corresponds to real phonon transitions resulting in a broad phonon sideband in the QD emission spectra. Above 10K, virtual phonon transitions to higher lying excited states in the QD become the dominant dephasing mechanism, this leads to broadening of the zero phonon line, and a corresponding rapid decay in the visibility. The microscopic theory we develop provides analytic expressions for the dephasing rates for both virtual phonon scattering and non-Markovian lattice relaxation.
Lattice vibrations of point defects are essential for understanding non-radiative electron and hole capture in semiconductors as they govern properties including persistent photoconductivity and Shockley-Read-Hall recombination rate. Although the harmonic approximation is sufficient to describe a defect with small lattice relaxation, for cases of large lattice relaxation it is likely to break down. We describe a first-principles procedure to account for anharmonic carrier capture and apply it to the important case of the textit{DX} center in GaAs. This is a system where the harmonic approximation grossly fails. Our treatment of the anharmonic Morse-like potentials accurately describes the observed electron capture barrier, predicting the absence of quantum tunnelling at low temperature, and a high hole capture rate that is independent of temperature. The model also explains the origin of the composition-invariant electron emission barrier. These results highlight an important shortcoming of the standard approach for describing point defect ionization that is accompanied by large lattice relaxation, where charge transfer occurs far from the equilibrium configuration.
Efficient simulations of the dynamics of open systems is of wide importance for quantum science and tech-nology. Here, we introduce a generalization of the transfer-tensor, or discrete-time memory kernel, formalism to multi-time measurement scenarios. The transfer-tensor method sets out to compute the state of an open few-body quantum system at long times, given that only short-time system trajectories are available. Here, we showthat the transfer-tensor method can be extended to processes which include multiple interrogations (e.g. measurements) of the open system dynamics as it evolves, allowing us to propagate high order short-time correlation functions to later times, without further recourse to the underlying system-environment evolution. Our approach exploits the process-tensor description of open quantum processes to represent and propagate the dynamics in terms of an object from which any multi-time correlation can be extracted. As an illustration of the utility of the method, we study the build-up of system-environment correlations in the paradigmatic spin-boson model, and compute steady-state emission spectra, taking fully into account system-environment correlations present in the steady state.
E. R. Schmidgall
,Y. Benny
,I. Schwartz
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(2016)
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"Selection Rules for Non-Radiative Carrier Relaxation Processes in Semiconductor Quantum Dots"
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Emma Schmidgall
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