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Register a new userVariational Approach to Solving the Spectral Boltzmann Transport Equation in Transient Thermal Grating for Thin Films
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The phonon Boltzmann transport equation (BTE) is widely utilized to study non-diffusive thermal transport. We find a solution of the BTE in the thin film transient thermal grating (TTG) experimental geometry by using a recently developed variational approach with a trial solution supplied by the Fourier heat conduction equation. We obtain an analytical expression for the thermal decay rate that shows excellent agreement with Monte Carlo simulations. We also obtain a closed form expression for the effective thermal conductivity that demonstrates the full material property and heat transfer geometry dependence, and recovers the limits of the one-dimensional TTG expression for very thick films and the Fuchs-Sondheimer expression for very large grating spacings. The results demonstrate the utility of the variational technique for analyzing non-diffusive phonon-mediated heat transport for nanostructures in multi-dimensional transport geometries, and will assist the probing of the mean free path (MFP) distribution of materials via transient grating experiments.
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The phonon Boltzmann transport equation (BTE) is a powerful tool for studying non-diffusive thermal transport. Here, we develop a new universal variational approach to solving the BTE that enables extraction of phonon mean free path (MFP) distributions from experiments exploring non-diffusive transport. By utilizing the known Fourier solution as a trial function, we present a direct approach to calculating the effective thermal conductivity from the BTE. We demonstrate this technique on the transient thermal grating (TTG) experiment, which is a useful tool for studying non-diffusive thermal transport and probing the mean free path (MFP) distribution of materials. We obtain a closed form expression for a suppression function that is materials dependent, successfully addressing the non-universality of the suppression function used in the past, while providing a general approach to studying thermal properties in the non-diffusive regime.
In this paper, the exact transient quantum transport of non-interacting nanostructures is investigated in the presence of initial system-lead correlations and initial lead-lead correlations for a device system coupled to general electronic leads. The exact master equation incorporating with initial correlations is derived through the extended quantum Langevin equation. The effects of the initial correlations are manifested through the time-dependent fluctuations contained explicitly in the exact master equation. The transient transport current incorporating with initial correlations is obtained from the exact master equation. The resulting transient transport current can be expressed in terms of the single-particle propagating and correlation Green functions of the device system. We show that the initial correlations can affect quantum transport not only in the transient regime, but also in the steady-state limit when system-lead couplings are strong enough so that electron localized bound states occur in the device system.
The impact of boundary scattering on non-diffusive thermal relaxation of a transient grating in thin membranes is rigorously analyzed using the multidimensional phonon Boltzmann equation. The gray Boltzmann simulation results indicate that approximating models derived from previously reported one-dimensional relaxation model and Fuchs-Sondheimer model fail to describe the thermal relaxation of membranes with thickness comparable with phonon mean free path. Effective thermal conductivities from spectral Boltzmann simulations completely free of any fitting parameters are shown to agree reasonably well with experimental results. These findings are important for improving our fundamental understanding of non-diffusive thermal transport in membranes and other nanostructures.
Weyl metal is regarded as a platform toward interacting topological states of matter, where its topological structure gives rise to anomalous transport phenomena, referred to as chiral magnetic effect and negative magneto-resistivity, the origin of which is chiral anomaly. Recently, the negative magneto-resistivity has been observed with the signature of weak anti-localization at $x = 3 sim 4 ~ %$ in Bi$_{1-x}$Sb$_{x}$, where magnetic field is applied in parallel with electric field. Based on the Boltzmann-equation approach, we find the negative magneto-resistivity in the presence of weak anti-localization. An essential ingredient is to introduce the topological structure of chiral anomaly into the Boltzmann-equation approach, resorting to semi-classical equations of motion with Berry curvature.
In model studies of the spin/anomalous Hall effect, effective Hamiltonians often serve as the starting point. However, a complete effective quantum theory contains not only the effective Hamiltonian but also the relation linking the physical observables to the canonical ones. We construct the semiclassical Boltzmann (SB) transport framework in the weak disorder-potential regime directly in the level of the effective quantum theory, and confirm this construction by formulating a generalized Kohn-Luttinger density matrix transport theory also in this level. The link and difference between the present SB theory and previous phenomenological Boltzmann, quantum kinetic and usual Kubo-Streda theories are clarified. We also present the slightly generalized Kubo-Streda formula in the level of the effective quantum theory. In this level, it is the generalized Kubo-Streda formula rather than the usual one that leads to the same physical interpretations as the present SB theory. In the application to a Rashba 2D effective model, a nonzero spin Hall effect important in the case of strong Rashba coupling but neglected in previous theories is found.
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