Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userNearly massless Dirac fermions hosted by Sb square net in BaMnSb2
357
0
0.0
(
0
)
Added by
Jinyu Liu Jinyu Liu
Publication date
2016
fields
Physics
and research's language is
English
Ask ChatGPT about the research
No Arabic abstract
Layered compounds AMnBi2 (A=Ca, Sr, Ba, or rare earth element) have been established as Dirac materials. Dirac electrons generated by the two-dimensional (2D) Bi square net in these materials are normally massive due to the presence of a spin-orbital coupling (SOC) induced gap at Dirac nodes. Here we report that the Sb square net in an isostructural compound BaMnSb2 can host nearly massless Dirac fermions. We observed strong Shubnikov-de Haas (SdH) oscillations in this material. From the analyses of the SdH oscillations, we find key signatures of Dirac fermions, including light effective mass (~0.052m0; m0, mass of free electron), high quantum mobility (1280 cm2V-1S-1) and a Pi Berry phase accumulated along cyclotron orbit. Compared with AMnBi2, BaMnSb2 also exhibits much more significant quasi two-dimensional (2D) electronic structure, with the out-of-plane transport showing nonmetallic conduction below 120K and the ratio of the out-of-plane and in-plane resistivity reaching ~670. Additionally, BaMnSb2 also exhibits an antiferromagnetic order with a weak ferromagnetic component. The combination of nearly massless Dirac fermions on quasi-2D planes with a magnetic order makes BaMnSb2 an intriguing platform for seeking novel exotic phenomena of massless Dirac electrons.
rate research
Read More
The quantum spin Hall insulator (QSHI) state has been demonstrated in two semiconductor systems - HgTe/CdTe quantum wells (QWs) and InAs/GaSb QW bilayers. Unlike the HgTe/CdTe QWs, the inverted band gap in InAs/GaSb QW bilayers does not open at the $Gamma$ point of the Brillouin zone, preventing the realization of massless Dirac fermions. Here, we propose a new class of semiconductor systems based on InAs/Ga(In)Sb multilayers, hosting a QSHI state, a graphene-like phase and a bilayer graphene analogue, depending on their layer thicknesses and geometry. The QSHI gap in the novel structures can reach up to 60 meV for realistic design and parameters. This value is twice as high as the thermal energy at room temperature and significantly extends the application potential of III-V semiconductor-based topological devices.
Materials with triply-degenerate nodal points in their low-energy electronic spectrum produce crystalline-symmetry-enforced three-fold fermions, which conceptually lie between the two-fold Weyl and four-fold Dirac fermions. Here we show how a silver-based Dirac semimetal BaAgAs realizes three-fold fermions through our first-principles calculations combined with a low-energy effective $mathbf{k.p}$ model Hamiltonian analysis. BaAgAs is shown to harbor triply-degenerate nodal points, which lie on its $C_{3}$ rotation axis, and are protected by the $C_{6v}$($C_2otimes C_{3v}$) point-group symmetry in the absence of spin-orbit coupling (SOC) effects. When the SOC is turned on, BaAgAs transitions into a nearly-ideal Dirac semimetal state with a pair of Dirac nodes lying on the $C_{3}$ rotation axis. We show that breaking inversion symmetry in the BaAgAs$_{1-x}$P$_x$ alloy yields a clean and tunable three-fold fermion semimetal. Systematic relaxation of other symmetries in BaAgAs generates a series of other topological phases. BaAgAs materials thus provide an ideal platform for exploring tunable topological properties associated with a variety of different fermionic excitations.
We study longitudinal electric and thermoelectric transport coefficients of Dirac fermions on a simple lattice model where tuning of a single parameter enables us to change the type of Dirac cones from type-I to type-II. We pay particular attention to the behavior of the critical situation, i.e., the type-III Dirac cone. We find that the transport coefficients of the type-III Dirac fermions behave neither the limiting case of the type-I nor type-II. On one hand, the qualitative behaviors of the type-III case are similar to those of the type-I. On the other hand, the transport coefficients do not change monotonically upon increasing the tilting, namely, the largest thermoelectric response is obtained not for the type-III case but for the optically tilted type-I case. For the optimal case, the sizable transport coefficients are obtained, e.g., the dimensionless figure of merit being 0.18.
Exotic properties in single or few layers of van der Waals materials carry great promise for applications in nanoscaled electronics, optoelectronics and flexible devices. The established, distinct examples include extremely high mobility and superior thermal conductivity in graphene, a large direct band gap in monolayer MoS2 and quantum spin Hall effect in WTe2 monolayer, etc. All these exotic properties arise from the electron quantum confinement effect in the two-dimensional limit. Here we report a novel phenomenon due to one-dimensional (1D) confinement of carriers in a layered van der Waals material NbSi0.45Te2 revealed by angle-resolved photoemission spectroscopy, i.e. directional massless Dirac fermions. The 1D behavior of the carriers is directly related to a stripe-like structural modulation with the long-range translational symmetry only along the stripe direction, as perceived by scanning tunneling microscopy experiment. The four-fold degenerated node of 1D Dirac dispersion is essential and independent on band inversion, because of the protection by nonsymmorphic symmetry of the stripe structure. Our study not only provides a playground for investigating the striking properties of the essential directional massless Dirac fermions, but also introduces a unique monomer with 1D long-range order for engineering nano-electronic devices based on heterostructures of layered van der Waals materials.
Dirac states hosted by Sb/Bi square nets are known to exist in the layered antiferromagnetic AMnX$_2$ (A = Ca/Sr/Ba/Eu/Yb, X=Sb/Bi) material family the space group to be P4/nmm or I4/mmm. In this paper, we present a comprehensive study of quantum transport behaviors, angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations on SrZnSb2, a nonmagnetic analogue to AMnX2, which crystallizes in the pnma space group with distorted square nets. From the quantum oscillation measurements up to 35 T, three major frequencies including F$_1$ = 103 T, F$_2$ = 127 T and F$_3$ = 160 T, are identified. The effective masses of the quasiparticles associated with these frequencies are extracted, namely, m*$_1$ = 0.1 m$_e$, m*$_2$ = 0.1 m$_e$ and m*$_3$ = 0.09m$_e$, where m$_e$ is the free electron mass. From the three-band Lifshitz-Kosevich fit, the Berry phases accumulated along the cyclotron orbit of the quasiparticles are 0.06$pi$, 1.2$pi$ and 0.74$pi$ for F$_1$, F$_2$ and F$_3$, respectively. Combined with the ARPES data and the first-principles calculations, we reveal that F2 and F3 are associated with the two nontrivial Fermi pockets at the Brillouin zone edge while F1 is associated with the trivial Fermi pocket at the zone center. In addition, the first-principles calculations further suggest the existence of Dirac nodal line in the band structure of SrZnSb$_2$.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
