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Register a new userVery low critical current density for motion of coupled domain walls in synthetic ferrimagnet nanowires
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Added by
Prof. Christopher Marrows
Publication date
2016
fields
Physics
and research's language is
English
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Domain walls in ferromagnetic nanowires are potential building-blocks of future technologies such as racetrack memories, in which data encoded in the domain walls are transported using spin-polarised currents. However, the development of energy-efficient devices has been hampered by the high current densities needed to initiate domain wall motion. We show here that a remarkable reduction in the critical current density can be achieved for in-plane magnetised coupled domain walls in CoFe/Ru/CoFe synthetic ferrimagnet tracks. The antiferromagnetic exchange coupling between the layers leads to simple N{e}el wall structures, imaged using photoemission electron and Lorentz transmission electron microscopy, with a width of only $sim 100$~nm. The measured critical current density to set these walls in motion, detected using magnetotransport measurements, is $1.0 times 10^{11}$~Am$^{-2}$, almost an order of magnitude lower than in a ferromagnetically coupled control sample. Theoretical modelling indicates that this is due to nonadiabatic driving of anisotropically coupled walls, a mechanism that can be used to design efficient domain-wall devices.
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The precise manipulation of transverse magnetic domain walls in finite/infinite nanowires with artificial defects under the influence of very short spin-polarized current pulses is investigated. We show that for a classical $3d$ ferromagnet material like Nickel, the exact positioning of the domain walls at room temperature is possible only for pulses with very short rise and fall time that move the domain wall reliably to nearest neighboring pinning position. The influence of the shape of the current pulse and of the transient effects on the phase diagram current-pulse length are discussed. We show that large transient effects appear even when $alpha$=$beta$, below a critical value, due to the domain wall distortion caused by the current pulse shape and the presence of the notches. The transient effects can oppose or amplify the spin-transfer torque (STT), depending on the ratio $beta/alpha$. This enlarges the physical comprehension of the DW motion under STT and opens the route to the DW displacement in both directions with unipolar currents.
Due to the difficulty in detecting and manipulating magnetic states of antiferromagnetic materials, studying their switching dynamics using electrical methods remains a challenging task. In this work, by employing heavy metal/rare earth-transition metal alloy bilayers, we experimentally studied current-induced domain wall dynamics in an antiferromagnetically coupled system. We show that the current-induced domain wall mobility reaches a maximum close to the angular momentum compensation. With experiment and modelling, we further reveal the internal structures of domain walls and the underlying mechanisms for their fast motion. We show that the chirality of the ferrimagnetic domain walls remains the same across the compensation points, suggesting that spin orientations of specific sublattices rather than net magnetization determine Dzyaloshinskii-Moriya interaction in heavy metal/ferrimagnet bilayers. The high current-induced domain wall mobility and the robust domain wall chirality in compensated ferrimagnetic material opens new opportunities for high-speed spintronic devices.
The nonlinear dynamics of a transverse domain wall (TDW) in Permalloy and Nickel nanostrips with two artificially patterned pinning centers is studied numerically up to rf frequencies. The phase diagram frequency - driving amplitude shows a rich variety of dynamical behaviors depending on the material parameters and the type and shape of pinning centers. We find that T-shaped traps (antinotches) create a classical double well Duffing potential that leads to a small chaotic region in the case of Nickel and a large one for Py. In contrast, the rectangular constrictions (notches) create an exponential potential that leads to larger chaotic regions interspersed with periodic windows for both Py and Ni. The influence of temperature manifests itself by enlarging the chaotic region and activating thermal jumps between the pinning sites while reducing the depinning field at low frequency in the notched strips.
We experimentally study the structure and dynamics of magnetic domains in synthetic antiferromagnets based on Co/Ru/Co films. Dramatic effects arise from the interaction among the topological defects comprising the dual domain walls in these structures. Under applied magnetic fields, the dual domain walls propagate following the dynamics of bi-meronic (bi-vortex/bi-antivortex) topological defects built in the walls. Application of an external field triggers a rich dynamical response: The propagation depends on mutual orientation and chirality of bi-vortices and bi-antivortices in the domain walls. For certain configurations, we observe sudden jumps of composite domain walls in increasing field, which are associated with the decay of composite skyrmions. These features allow for enhanced control of domain-wall motion in synthetic antiferromagnets with the potential of employing them as information carriers in future logic and storage devices.
Perpendicularly magnetized nanowires exhibit distinct domain wall types depending on the geometry. Wide wires contain Bloch walls, narrow wires Neel walls. Here, the transition region is investigated by direct imaging of the wall structure using high-resolution spin-polarized scanning electron microscopy. An achiral intermediate wall type is discovered that is unpredicted by established theoretical models. With the help of micromagnetic simulations, the formation of this novel wall type is explained.
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