No Arabic abstract
The single-band current-dipole Kubo formula for the dynamical conductivity of heavily doped graphene from Kupv{c}i{c} [Phys. Rev. B 91, 205428 (2015)] is extended to a two-band model for conduction $pi$ electrons in lightly doped graphene. Using a posteriori relaxation-time approximation in the two-band quantum transport equations, with two different relaxation rates and one quasi-particle lifetime, we explain a seemingly inconsistent dependence of the dc conductivity $sigma^{rm dc}_{alpha alpha}$ of ultraclean and dirty lightly doped graphene samples on electron doping, in a way consistent with the charge continuity equation. It is also shown that the intraband contribution to the effective number of conduction electrons in $sigma^{rm dc}_{alpha alpha}$ vanishes at $T=0$ K in the ultraclean regime, but it remains finite in the dirty regime. The present model is shown to be consistent with a picture in which the intraband and interband contributions to $sigma^{rm dc}_{alpha alpha}$ are characterized by two different mobilities of conduction electrons, the values of which are well below the widely accepted value of mobility in ultraclean graphene. The dispersions of Dirac and $pi$ plasmon resonances are reexamined to show that the present, relatively simple expression for the dynamical conductivity tensor can be used to study simultaneously single-particle excitations in the dc and optical conductivity and collective excitations in energy loss spectroscopy experiments.
We point out a misleading treatment in a recent paper published in this Journal [J. Math. Phys. (2016) 57, 082105] concerning solutions for the two-dimensional Dirac-Weyl equation with a q-deformed pseudoscalar magnetic barrier. The authors misunderstood the full meaning of the potential and made erroneous calculations, this fact jeopardizes the main results in this system.
Gradual localization of charge carriers was studied in a series of micro-size samples of monolayer graphene fabricated on the common large scale film and irradiated by different doses of C$^+$ ions with energy 35 keV. Measurements of the temperature dependence of conductivity and magnetoresistance in fields up to 4 T showed that at low disorder, the samples are in the regime of weak localization and antilocalization. Further increase of disorder leads to strong localization regime, when conductivity is described by the variable-range-hopping (VRH) mechanism. A crossover from the Mott regime to the Efros-Shklovskii regime of VRH is observed with decreasing temperature. Theoretical analysis of conductivity in both regimes showed a remarkably good agreement with experimental data.
We study the low frequency admittance of a quantum Hall bar of size much larger than the electronic coherence length. We find that this macroscopic conductor behaves as an ideal quantum conductor with vanishing longitudinal resistance and purely inductive behavior up to f<1MHz. Using several measurement configurations, we study the dependence of this inductance on the length of the edge channel and on the integer quantum Hall filling fraction. The experimental data are well described by a scattering model for edge magnetoplasmons taking into account effective long range Coulomb interactions within the sample. This demonstrates that the inductances dependence on the filling fraction arises from the effective quantum inertia of charge carriers induced by Coulomb interactions within an ungated macroscopic quantum Hall bar.
The diffusion of electron-hole pairs, which are excited in an intrinsic graphene by the ultrashort focused laser pulse in mid-IR or visible spectral region, is described for the cases of peak-like or spread over the passive region distributions of carriers. The spatio-temporal transient optical response on a high-frequency probe beam appears to be strongly dependent on the regime of diffusion and can be used for verification of the elasic relaxation mechanism. Sign flip of the differential transmission coefficient takes place due to interplay of the carrier-induced contribution and weak dynamic conductivity of undoped graphene.
Systematic analysis of the planar resistivity, Hall effect and cotangent of the Hall angle for the electron-doped cuprates reveals underlying Fermi-liquid behavior even deep in the antiferromagnetic part of the phase diagram. The transport scattering rate exhibits a quadratic temperature dependence, and is nearly independent of doping, compound and carrier type (electrons vs. holes), and hence universal. Our analysis moreover indicates that the material-specific resistivity upturn at low temperatures and low doping has the same origin in both electron- and hole-doped cuprates.