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Register a new userAndreev reflection in s-type superconductor proximized 3D topological insulator
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We investigate transport and shot noise in lateral N-TI-S contacts, where N is a normal metal, TI is a Bi-based three dimensional topological insulator (3D TI), and S is an s-type superconductor. In normal state, the devices are in the elastic diffusive transport regime, as demonstrated by a nearly universal value of the shot noise Fano factor $F_{rm N}approx1/3$ in magnetic field and in reference normal contact. In the absence of magnetic field, we identify the Andreev reflection (AR) regime, which gives rise to the effective charge doubling in shot noise measurements. Surprisingly, the Fano factor $F_{rm AR}approx0.22pm0.02$ is considerably reduced in the AR regime compared to $F_{rm N}$, in contrast to previous AR experiments in normal metals and semiconductors. We suggest that this effect is related to a finite thermal conduction of the proximized, superconducting TI owing to a residual density of states at low energies.
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Topological insulators (TIs) have attracted immense interest because they host helical surface states. Protected by time-reversal symmetry, they are robust to non-magnetic disorder. When superconductivity is induced in these helical states, they are predicted to emulate p-wave pairing symmetry, with Majorana states bound to vortices. Majorana bound states possess non-Abelian exchange statistics which can be probed through interferometry. Here, we take a significant step towards Majorana interferometry by observing pronounced Fabry-Perot oscillations in a TI sandwiched between a superconducting and normal lead. For energies below the superconducting gap, we observe a doubling in the frequency of the oscillations, arising from the additional phase accumulated from Andreev reflection. When a magnetic field is applied perpendicular to the TI surface, a number of very sharp and gate-tunable conductance peaks appear at or near zero energy, which has consequences for interpreting spectroscopic probes of Majorana fermions. Our results demonstrate that TIs are a promising platform for exploring phase-coherent transport in a solid-state system.
We numerically study crossed Andreev reflection (CAR) in a topological insulator nanowire T-junction where one lead is proximitized by a superconductor. We perform realistic simulations based on the 3D BHZ model and compare the results with those from an effective 2D surface model, whose computational cost is much lower. Both approaches show that CAR should be clearly observable in a wide parameter range, including perfect CAR in a somewhat more restricted range. Furthermore, it can be controlled by a magnetic field and is robust to disorder. Our effective 2D implementation allows to model systems of micronsize, typical of experimental setups, but computationally too heavy for 3D models.
We calculate the probability distribution of the Andreev reflection eigenvalues R_n at the Fermi level in the circular ensemble of random-matrix theory. Without spin-rotation symmetry, the statistics of the electrical conductance G depends on the topological quantum number Q of the superconductor. We show that this dependence is nonperturbative in the number N of scattering channels, by proving that the p-th cumulant of G is independent of Q for p<N/d (with d=2 or d=1 in the presence or in the absence of time-reversal symmetry). A large-N effect such as weak localization cannot, therefore, probe the topological quantum number. For small N we calculate the full distribution P(G) of the conductance and find qualitative differences in the topologically trivial and nontrivial phases.
We report the study of ballistic transport in normal metal/graphene/superconductor junctions in edge-contact geometry. While in the normal state, we have observed Fabry-P{e}rot resonances suggesting that charge carriers travel ballistically, the superconducting state shows that the Andreev reflection at the graphene/superconductor interface is affected by these interferences. Our experimental results in the superconducting state have been analyzed and explained with a modified Octavio-Tinkham-Blonder-Klapwijk model taking into account the magnetic pair-breaking effects and the two different interface transparencies, textit{i.e.},between the normal metal and graphene, and between graphene and the superconductor. We show that the transparency of the normal metal/graphene interface strongly varies with doping at large scale, while it undergoes weaker changes at the graphene/superconductor interface. When a cavity is formed by the charge transfer occurring in the vicinity of the contacts, we see that the transmission probabilities follow the normal state conductance highlighting the interplay between the Andreev processes and the electronic interferometer.
Using the non-equilibrium Green function method, we study the Andreev reflection in a Y-shaped graphene-superconductor device by tight-binding model. Considering both the zigzag and armchair terminals, we confirm that the zigzag terminals are the better choice for detecting the Andreev reflection without no external field. Due to scattering from the boundaries of the finite-size centre region, the difference between Andreev retroreflection and specular reflection is hard to be distinguished. Although adjusting the size of the device makes the difference visible, to distinguish them quantitatively is still impossible through the transport conductance. The problem is circumvented when applying a perpendicular magnetic field on the centre region, which makes the incident electrons and the reflected holes propagate along the edge or the interface. In this case, the retroreflected and specular reflected holes from the different bands have opposite effective masses, therefore the moving direction of one is opposite to the other. Which external terminal the reflected holes flow into depends entirely on the kind of the Andreev reflection. Therefore, the specular Andreev reflection can be clearly distinguished from the retroreflected one in the presence of strong magnetic field, even for the device with finite size.
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