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Register a new userTowards optimized surface $delta$-profiles of nitrogen-vacancy centers activated by helium irradiation in diamond
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Added by
Felipe Favaro De Oliveira
Publication date
2016
fields
Physics
and research's language is
English
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The negatively-charged nitrogen-vacancy (NV) center in diamond has been shown recently as an excellent sensor for external spins. Nevertheless, their optimum engineering in the near-surface region still requires quantitative knowledge in regard to their activation by vacancy capture during thermal annealing. To this aim, we report on the depth profiles of near-surface helium-induced NV centers (and related helium defects) by step-etching with nanometer resolution. This provides insights into the efficiency of vacancy diffusion and recombination paths concurrent to the formation of NV centers. It was found that the range of efficient formation of NV centers is limited only to approximately $10$ to $15,$nm (radius) around the initial ion track of irradiating helium atoms. Using this information we demonstrate the fabrication of nanometric-thin ($delta$) profiles of NV centers for sensing external spins at the diamond surface based on a three-step approach, which comprises (i) nitrogen-doped epitaxial CVD diamond overgrowth, (ii) activation of NV centers by low-energy helium irradiation and thermal annealing, and (iii) controlled layer thinning by low-damage plasma etching. Spin coherence times (Hahn echo) ranging up to $50,$ $mu$s are demonstrated at depths of less than $5,$nm in material with $1.1,%$ of $^{13}$C (depth estimated by spin relaxation (T$_1$) measurements). At the end, the limits of the helium irradiation technique at high ion fluences are also experimentally investigated.
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A study of the photophysical properties of nitrogen-vacancy (NV) color centers in diamond nanocrystals of size of 50~nm or below is carried out by means of second-order time-intensity photon correlation and cross-correlation measurements as a function of the excitation power for both pure charge states, neutral and negatively charged, as well as for the photochromic state, where the center switches between both states at any power. A dedicated three-level model implying a shelving level is developed to extract the relevant photophysical parameters coupling all three levels. Our analysis confirms the very existence of the shelving level for the neutral NV center. It is found that it plays a negligible role on the photophysics of this center, whereas it is responsible for an increasing photon bunching behavior of the negative NV center with increasing power. From the photophysical parameters, we infer a quantum efficiency for both centers, showing that it remains close to unity for the neutral center over the entire power range, whereas it drops with increasing power from near unity to approximately 0.5 for the negative center. The photophysics of the photochromic center reveals a rich phenomenology that is to a large extent dominated by that of the negative state, in agreement with the excess charge release of the negative center being much slower than the photon emission process.
We use magnetic-field-dependent features in the photoluminescence of negatively charged nitrogen-vacancy centers to measure magnetic fields without the use of microwaves. In particular, we present a magnetometer based on the level anti-crossing in the triplet ground state at 102.4 mT with a demonstrated noise floor of 6 nT/$sqrt{text{Hz}}$, limited by the intensity noise of the laser and the performance of the background-field power supply. The technique presented here can be useful in applications where the sensor is placed closed to conductive materials, e.g. magnetic induction tomography or magnetic field mapping, and in remote-sensing applications since principally no electrical access is needed.
We investigate the strain-induced coupling between a nitrogen-vacancy impurity and a resonant vibrational mode of a diamond nanoresonator. We show that under near-resonant laser excitation of the electronic states of the impurity, this coupling can modify the state of the resonator and either cool the resonator close to the vibrational ground state or drive it into a large amplitude coherent state. We derive a semi-classical model to describe both effects and evaluate the stationary state of the resonator mode under various driving conditions. In particular, we find that by exploiting resonant single and multi-phonon transitions between near-degenerate electronic states, the coupling to high-frequency vibrational modes can be significantly enhanced and dominate over the intrinsic mechanical dissipation. Our results show that a single nitrogen-vacancy impurity can provide a versatile tool to manipulate and probe individual phonon modes in nanoscale diamond structures.
We designed a nanoscale light extractor (NLE) for efficient outcoupling and beaming of broadband light emitted by shallow, negatively charged nitrogen-vacancy (NV) centers in bulk diamond. The NLE consists of a patterned silicon layer on diamond and requires no etching of the diamond surface. Our design process is based on adjoint optimization using broadband time-domain simulations and yields structures that are inherently robust to positioning and fabrication errors. Our NLE functions like a transmission antenna for the NV center, enhancing the optical power extracted from an NV center positioned 10 nm below the diamond surface by a factor of more than 35, and beaming the light into a +/-30{deg} cone in the far field. This approach to light extraction can be readily adapted to other solid-state color centers.
We demonstrate preferential orientation of nitrogen-vacancy (NV) color centers along two of four possible crystallographic axes in diamonds grown by chemical vapor deposition on the {100} face. We identify the relevant growth regime and present a possible explanation of this effect. We show that preferential orientation provides increased optical read-out contrast for NV multi-spin measurements, including enhanced AC magnetic field sensitivity, thus providing an important step towards high fidelity multi-spin-qubit quantum information processing, sensing and metrology.
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