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Register a new userKinetic limitation of chemical ordering in Bi$_2$Te$_{3-x}$Se$_x$ layers grown by molecular beam epitaxy
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We study the chemical ordering in Bi$_2$Te$_{3-x}$Se$_x$ grown by molecular beam epitaxy on Si substrates. We produce films in the full composition range from x = 0 to 3, and determine their material properties using energy dispersive X-ray spectroscopy, X-ray diffraction and Raman spectroscopy. By fitting the parameters of a kinetic growth model to these results, we obtain a consistent description of growth at a microscopic level. Our main finding is that despite the incorporation of Se in the central layer being much more probable than that of Te, the formation of a fully ordered Te-Bi-Se-Bi-Te layer is prevented by kinetic of the growth process. Indeed, the Se concentration in the central layer of Bi$_2$Te$_2$Se$_1$ reaches a maximum of only $approx$ 75% even under ideal growth conditions. A second finding of our work is that the intensity ratio of the 0 0 12 and 0 0 6 X-ray reflections serves as an experimentally accessible quantitative measure of the degree of ordering in these films.
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Relying on the magnetism induced by the proximity effect in heterostructures of topological insulators and magnetic insulators is one of the promising routes to achieve the quantum anomalous Hall effect. Here we investigate heterostructures of Bi$_2$Te$_3$ and Fe$_3$O$_4$. By growing two different types of heterostructures by molecular beam epitaxy, Fe$_3$O$_4$ on Bi$_2$Te$_3$ and Bi$_2$Te$_3$ on Fe$_3$O$_4$, we explore differences in chemical stability, crystalline quality, electronic structure, and transport properties. We find the heterostructure Bi$_2$Te$_3$ on Fe$_3$O$_4$ to be a more viable approach, with transport signatures in agreement with a gap opening in the topological surface states.
We have systematically studied the magnetic properties of chromium chalcogene compounds FeCr$_2$Se$_{4-x}$Te$_x$. The FeCr2Se4 undergoes antiferromagnetic ordering below 222 K. Substitution of tellurium lowers the antiferromagnetic ordering temperature and leads to short range ferromagnetic cluster behavior towards the tellurium end. Change over from antiferromagnetic to ferrimagnetic like behavior is also reflected in the corresponding transformation from semiconducting to metallic transport behavior. There is a large variation in the Curie-Weiss temperature, effective magnetic moment and ordering temperature (TN / TC) with Te substitution. The electronic band structure calculations suggest antiferromagnetic and ferrimagnetic ground state for the FeCr2Se4 and FeCr2Te4 respectively.
We have investigated the optical properties of thin films of topological insulators Bi$_{2}$Te$_{3}$, Bi$_{2}$Se$_{3}$ and their alloys Bi$_2$(Te$_{1-x}$Se$_x$)$_3$ on BaF$_{2}$ substrates by a combination of infrared ellipsometry and reflectivity in the energy range from 0.06 to 6.5 eV. For the onset of interband absorption in Bi$_2$Se$_3$, after the correction for the Burstein-Moss effect, we find the value of direct bandgap of $215pm10$ meV at 10 K. Our data supports the picture that Bi$_2$Se$_3$ has a direct band gap located at the $Gamma$ point in the Brillouin zone and that the valence band reaches up to the Dirac point and has the shape of a downward oriented paraboloid, i.e. without a camel-back structure. In Bi$_2$Te$_3$, the onset of strong direct interband absorption at 10 K is at a similar energy of about 200 meV, with a weaker additional feature at about 170 meV. Our data support the recent GW band structure calculations suggesting that the direct interband transition does not occur at the $Gamma$ point but near the Z-F line of the Brillouin zone. In the Bi$_2$(Te$_{1-x}$Se$_x$)$_3$ alloy, the energy of the onset of direct interband transitions exhibits a maximum near $x=0.3$ (i.e. the composition of Bi$_2$Te$_2$Se), suggesting that the crossover of the direct interband transitions between the two points in the Brillouin zone occurs close to this composition.
Transition metal dichalcogenides (TMDCs), together with other two-dimensional (2D) materials have attracted great interest due to the unique optical and electrical properties of atomically thin layers. In order to fulfill their potential, developing large-area growth and understanding the properties of TMDCs have become crucial. Here, we used molecular beam epitaxy (MBE) to grow atomically thin MoSe$_2$ on GaAs(111)B. No intermediate compounds were detected at the interface of as-grown films. Careful optimization of the growth temperature can result in the growth of highly aligned films with only two possible crystalline orientations due to broken inversion symmetry. As-grown films can be transferred onto insulating substrates allowing their optical and electrical properties to be probed. By using polymer electrolyte gating, we have achieved ambipolar transport in MBE-grown MoSe$_2$. The temperature-dependent transport characteristics can be explained by the 2D variable-range hopping (2D-VRH) model, indicating that the transport is strongly limited by the disorder in the film.
Disordered heterostructures stand as a general description for compounds that are part of homologous series such as bismuth chalcogenides. In device engineering, van der Waals epitaxy of these compounds is very promising for applications in spintronic and quantum computing. Structural analysis methods are essential to control and improve their synthesis in the form of thin films. Recently, X-rays tools have been proposed for structural modeling of disordered heterostructures [arXiv:2107.12280]. Here, we further evaluate the use of these tools to study the compound Mn$_x$Bi$_2$Te$_{3+x}$ in the grazing incidence region of the reflectivity curves, as well as the effect of thickness fluctuation in the wide angle region.
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