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Register a new userSubstrate effect and nanoindentation fracture toughness based on pile up and failure
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Arnab Bhattacharyya PhD
Publication date
2016
fields
Physics
and research's language is
English
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The effect of substrate was studied using nanoindentation on thin films. Soft films on hard substrate showed more pile up than usual which was attributed to the dislocation pile up at the film substrate interface. The effect of tip blunting on the load depth and hardness plots of nanoindentation was shown. The experimental date of variation of Vickers hardness with film thickness and loads were fitted and new parameters were analyzed. The delaminated area was analyzed using geometrical shapes using optical view of the failure region along with the load displacement Indentation fracture using Nanoindentation using Berkovich indenter has been studied. Indentation fracture toughness (KR) was analyzed based on computational programs. The contact mechanics during nanoindentation was studied with parameters related to indenter shape and tip sharpness. Elastic, plastic and total energies were computationally determined. The energy difference was related to shear stress being generated with elastic to plastic transition. Change in the nature of residual stress was related to film thickness.
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We examine the atomistic scale dependence of materials resistance-to-failure by numerical simulations and analytical analysis in electrical analogs of brittle crystals. We show that fracture toughness depends on the lattice geometry in a way incompatible with Griffiths relationship between fracture and free surface energy. Its value finds its origin in the matching between the continuum displacement field at the engineering scale, and the discrete nature of solids at the atomic scale. The generic asymptotic form taken by this field near the crack tip provides a solution for this matching, and subsequently a way to predict toughness from the atomistic parameters with application to graphene.
We have recently proposed an efficient computation method for the frictionless linear elastic axisymmetric contact of coated bodies [A. Perriot and E. Barthel, J. Mat. Res. 19 (2004) 600]. Here we give a brief description of the approach. We also discuss implications of the results for the instrumented indentation data analysis of coated materials. Emphasis is laid on incompressible or nearly incompressible materials (Poisson ratio $ u>0.4$): we show that the contact stiffness rises much more steeply with contact radius than for more compressible materials and significant elastic pile-up is evidenced. In addition the dependence of the penetration upon contact radius increasingly deviates from the homogeneous reference case when the Poisson ratio increases. As a result, this algorithm may be helpful in instrumented indentation data analysis on soft and nearly incompressible layers.
A theoretical-experimental methodology for failure analysis of the c-Al0.66Ti0.33N / Interface / M2 steel coating system is proposed here. This c-Al0.66Ti0.33N coating was deposited by the arc-PVD technique. For coating modeling the traction-separation law and the extended finite element method-XFEM were applied, the cohesive zones model was used for interface modeling and the Ramberg-Osgood law for substrate modeling. Experimental values using the instrumented nanoindentation technique, the scratch test and tensile stress test were obtained and introduced into the model. By means of nanoindentation the elastic modulus of coating, the fracture energy release rate and the nano-hardness. Normal and shear stress values of the interface were obtained with the scratch test, at the adhesive and cohesive critical loads. Vickers indentation was used to generate cracking patterns in the c-Al0.66Ti0.33N / Interface / M2 steel coating system. Radial and lateral cracks were generated and analyzed after transversal FIB cuts of the fracture zones. A finite element analysis was carried out to understand the relationship between the load-displacement curve and mechanical failure of in the system, associating the pop-in with nucleation, crack growth and cracking pattern. This works present a theoretical-experimental methodology for failure analysis of hard coatings (monolithic body) allowing to calculate fracture toughness of the coating material and model cracking patterns caused by contact mechanics.
Substrates have strong effects on optoelectronic properties of two-dimensional (2D) materials, which have emerged as promising platforms for exotic physical phenomena and outstanding applications. To reliably interpret experimental results and predict such effects at 2D interfaces, theoretical methods accurately describing electron correlation and electron-hole interaction such as first-principles many-body perturbation theory are necessary. In our previous work [Phys. Rev. B 102, 205113(2020)], we developed the reciprocal-space linear interpolation method that can take into account the effects of substrate screening for arbitrarily lattice-mismatched interfaces at the GW level of approximation. In this work, we apply this method to examine the substrate effect on excitonic excitation and recombination of 2D materials by solving the Bethe-Salpeter equation. We predict the nonrigid shift of 1s and 2s excitonic peaks due to substrate screening, in excellent agreements with experiments. We then reveal its underlying physical mechanism through 2D hydrogen model and the linear relation between quasiparticle gaps and exciton binding energies when varying the substrate screening. At the end, we calculate the exciton radiative lifetime of monolayer hexagonal boron nitride with various substrates at zero and room temperature, as well as the one of WS2 where we obtain good agreement with experimental lifetime. Our work answers important questions of substrate effects on excitonic properties of 2D interfaces.
We report low temperature scanning tunneling microscopy characterization of MoSe2 crystals, and the fabrication and electrical characterization of MoSe2 field-effect transistors on both SiO2 and parylene-C substrates. We find that the multilayer MoSe2 devices on parylene-C show a room temperature mobility close to the mobility of bulk MoSe2 (100 cm2V-1s-1 - 160 cm2V-1s-1), which is significantly higher than that on SiO2 substrate (~50 cm2V-1s-1). The room temperature mobility on both types of substrates are nearly thickness independent. Our variable temperature transport measurements reveal a metal-insulator transition at a characteristic conductivity of e2/h. The mobility of MoSe2 devices extracted from the metallic region on both SiO2 and parylene-C increases up to ~ 500 cm2V-1s-1 as the temperature decreases to ~ 100 K, with the mobility of MoSe2 on SiO2 increasing more rapidly. In spite of the notable variation of charged impurities as indicated by the strongly sample dependent low temperature mobility, the mobility of all MoSe2 devices on SiO2 converges above 200 K, indicating that the high temperature (> 200 K) mobility in these devices is nearly independent of the charged impurities. Our atomic force microscopy study of SiO2 and parylene-C substrates further rule out the surface roughness scattering as a major cause of the substrate dependent mobility. We attribute the observed substrate dependence of MoSe2 mobility primarily to the surface polar optical phonon scattering originating from the SiO2 substrate, which is nearly absent in MoSe2 devices on parylene-C substrate.
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