High level of dissipation in normal metals makes challenging development of active and passive plasmonic devices. One possible solution to this problem is to use alternative materials. Graphene is a good candidate for plasmonics in near infrared (IR) region. In this paper we develop quantum theory of a graphene plasmon generator. We account for the first time quantum correlations and dissipation effects that allows describing such regimes of quantum plasmonic amplifier as surface plasmon emitting diode and surface plasmon amplifier by stimulated emission of radiation. Switching between these generation types is possible in situ with variance of graphene Fermi-level or gain transition frequency. We provide explicit expressions for dissipation and interaction constants through material parameters and find the generation spectrum and correlation function of second order which predicts laser statistics.
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