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Register a new userQubit-based memcapacitors and meminductors
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Added by
Sergey Shevchenko N.
Publication date
2016
fields
Physics
and research's language is
English
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It is shown that superconducting charge and phase qubits are quant
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We extend the notion of memristive systems to capacitive and inductive elements, namely capacitors and inductors whose properties depend on the state and history of the system. All these elements show pinched hysteretic loops in the two constitutive variables that define them: current-voltage for the memristor, charge-voltage for the memcapacitor, and current-flux for the meminductor. We argue that these devices are common at the nanoscale where the dynamical properties of electrons and ions are likely to depend on the history of the system, at least within certain time scales. These elements and their combination in circuits open up new functionalities in electronics and they are likely to find applications in neuromorphic devices to simulate learning, adaptive and spontaneous behavior.
We introduce a hybrid qubit based on a semiconductor nanowire with an epitaxially grown superconductor layer. Josephson energy of the transmon-like device (gatemon) is controlled by an electrostatic gate that depletes carriers in a semiconducting weak link region. Strong coupling to an on-chip microwave cavity and coherent qubit control via gate voltage pulses is demonstrated, yielding reasonably long relaxation times (0.8 {mu}s) and dephasing times (1 {mu}s), exceeding gate operation times by two orders of magnitude, in these first-generation devices. Because qubit control relies on voltages rather than fluxes, dissipation in resistive control lines is reduced, screening reduces crosstalk, and the absence of flux control allows operation in a magnetic field, relevant for topological quantum information.
We analyse a quantum Otto refrigerator based on a superconducting qubit coupled to two LC-resonators each including a resistor acting as a reservoir. We find various operation regimes: nearly adiabatic (low driving frequency), ideal Otto cycle (intermediate frequency), and non-adiabatic coherent regime (high frequency). In the nearly adiabatic regime, the cooling power is quadratic in frequency, and we find substantially enhanced coefficient of performance $epsilon$, as compared to that of an ideal Otto cycle. Quantum coherent effects lead invariably to decrease in both cooling power and $epsilon$ as compared to purely classical dynamics. In the non-adiabatic regime we observe strong coherent oscillations of the cooling power as a function of frequency. We investigate various driving waveforms: compared to the standard sinusoidal drive, truncated trapezoidal drive with optimized rise and dwell times yields higher cooling power and efficiency.
We report development and microwave characterization of rf SQUID (Superconducting QUantum Interference Device) qubits, consisting of an aluminium-based Josephson junction embedded in a superconducting loop patterned from a thin film of TiN with high kinetic inductance. Here we demonstrate that the systems can offer small physical size, high anharmonicity, and small scatter of device parameters. The hybrid devices can be utilized as tools to shed further light onto the origin of film dissipation and decoherence in phase-slip nanowire qubits, patterned entirely from disordered superconducting films.
Solid-state qubits incorporating quantum dots can be read out by gate reflectometry. Here, we theoretically describe physical mechanisms that render such reflectometry-based readout schemes imperfect. We discuss charge qubits, singlet-triplet spin qubits, and Majorana qubits. In our model, we account for readout errors due to slow charge noise, and due to overdriving, when a too strong probe is causing errors. A key result is that for charge and spin qubits, the readout fidelity saturates at large probe strengths, whereas for Majorana qubits, there is an optimal probe strength which provides a maximized readout fidelity. We also point out the existence of severe readout errors appearing in a resonance-like fashion as the pulse strength is increased, and show that these errors are related to probe-induced multi-photon transitions. Besides providing practical guidelines toward optimized readout, our study might also inspire ways to use gate reflectometry for device characterization.
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