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Register a new userInterplay between nanometer-scale strain variations and externally applied strain in graphene
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We present a molecular modeling study analyzing nanometer-scale strain variations in graphene as a function of externally applied tensile strain. We consider two different mechanisms that could underlie nanometer-scale strain variations: static perturbations from lattice imperfections of an underlying substrate and thermal fluctuations. For both cases we observe a decrease in the out-of-plane atomic displacements with increasing strain, which is accompanied by an increase in the in-plane displacements. Reflecting the non-linear elastic properties of graphene, both trends together yield a non-monotonic variation of the total displacements with increasing tensile strain. This variation allows to test the role of nanometer-scale strain variations in limiting the carrier mobility of high-quality graphene samples.
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Confocal Raman spectroscopy is a versatile, non-invasive investigation tool and a major workhorse for graphene characterization. Here we show that the experimentally observed Raman 2D line width is a measure of nanometer-scale strain variations in graphene. By investigating the relation between the G and 2D line at high magnetic fields we find that the 2D line width contains valuable information on nanometer-scale flatness and lattice deformations of graphene, making it a good quantity for classifying the structural quality of graphene even at zero magnetic field.
Strain engineering of graphene takes advantage of one of the most dramatic responses of Dirac electrons enabling their manipulation via strain-induced pseudo-magnetic fields. Numerous theoretically proposed devices, such as resonant cavities and valley filters, as well as novel phenomena, such as snake states, could potentially be enabled via this effect. These proposals, however, require strong, spatially oscillating magnetic fields while to date only the generation and effects of pseudo-gauge fields which vary at a length scale much larger than the magnetic length have been reported. Here we create a periodic pseudo-gauge field profile using periodic strain that varies at the length scale comparable to the magnetic length and study its effects on Dirac electrons. A periodic strain profile is achieved by pulling on graphene with extreme (>10%) strain and forming nanoscale ripples, akin to a plastic wrap pulled taut at its edges. Combining scanning tunneling microscopy and atomistic calculations, we find that spatially oscillating strain results in a new quantization different from the familiar Landau quantization observed in previous studies. We also find that graphene ripples are characterized by large variations in carbon-carbon bond length, directly impacting the electronic coupling between atoms, which within a single ripple can be as different as in two different materials. The result is a single graphene sheet that effectively acts as an electronic superlattice. Our results thus also establish a novel approach to synthesize an effective 2D lateral heterostructure - by periodic modulation of lattice strain.
The structural flexibility of low dimensional nanomaterials offers unique opportunities for studying the impact of strain on their physical properties and for developing innovative devices utilizing strain engineering. A key towards such goals is a device platform which allows the independent tuning and reliable calibration of the strain. Here we report the fabrication and characterization of graphene nanoelectromechanical resonators(GNEMRs) on flexible substrates. Combining substrate bending and electrostatic gating, we achieve the independent tuning of the strain and sagging in graphene and explore the nonlinear dynamics over a wide parameter space. Analytical and numerical studies of a continuum mechanics model, including the competing higher order nonlinear terms, reveal a comprehensive nonlinear dynamics phase diagram, which quantitatively explains the complex behaviors of GNEMRs.
Graphene, due to its exceptional properties, is a promising material for nanotechnology applications. In this context, the ability to tune the properties of graphene-based materials and devices with the incorporation of defects and impurities can be of extraordinary importance. Here we investigate the effect of uniaxial tensile strain on the electronic and magnetic properties of graphene doped with substitutional Ni impurities (Ni_sub). We have found that, although Ni_sub defects are non-magnetic in the relaxed layer, uniaxial strain induces a spin moment in the system. The spin moment increases with the applied strain up to values of 0.3-0.4 mu_B per Ni_sub, until a critical strain of ~6.5% is reached. At this point, a sharp transition to a high-spin state (~1.9 mu_B) is observed. This magnetoelastic effect could be utilized to design strain-tunable spin devices based on Ni-doped graphene.
A Kekule bond texture in graphene modifies the electronic band structure by folding the Brillouin zone and bringing the two inequivalent Dirac points to the center. This can result, in the opening of a gap (Kek-O) or the locking of the valley degree of freedom with the direction of motion (Kek-Y). We analyze the effects of uniaxial strain on the band structure of Kekule-distorted graphene for both textures. Using a tight-binding approach, we introduce strain by considering the hopping renormalization and corresponding geometrical modifications of the Brillouin zone. We numerically evaluate the dispersion relation and present analytical expressions for the low-energy limit. Our results indicate the emergence of a Zeeman-like term due to the coupling of the pseudospin with the pseudomagnetic strain potential which separates the valleys by moving them in opposite directions away from the center of the Brillouin zone. For the Kek-O phase, this results in a competition between the Kekule parameter that opens a gap and the magnitude of strain which closes it. While for the Kek-Y phase, in a superposition of two shifted Dirac cones. As the Dirac cones are much closer in the supperlattice reciprocal space that in pristine graphene, we propose strain as a control parameter for intervalley scattering.
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