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Register a new userMagnetometry of micro-magnets with electrostatically defined Hall bars
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Added by
Dany Lachance-Quirion
Publication date
2015
fields
Physics
and research's language is
English
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Micro-magnets are key components for quantum information processing with individual spins, enabling arbitrary rotations and addressability. In this work, characterization of sub-micrometer sized CoFe ferromagnets is performed with Hall bars electrostatically defined in a two-dimensional electron gas. Due to the ballistic nature of electron transport in the cross junction of the Hall bar, anomalies such as the quenched Hall effect appear near zero external magnetic field, thus hindering the sensitivity of the magnetometer to small magnetic fields. However, it is shown that the sensitivity of the diffusive limit can be almost completely restored at low temperatures using a large current density in the Hall bar of about 10 A/m. Overcoming the size limitation of conventional etched Hall bars with electrostatic gating enables the measurement of magnetization curves of 440 nm wide micro-magnets with a signal-to-noise ratio above 10^3. Furthermore, the inhomogeneity of the stray magnetic field created by the micro-magnets is directly measured using the gate-voltage-dependent width of the sensitive area of the Hall bar.
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In this work we use electrostatic control of quantum Hall ferromagnetic transitions in CdMnTe quantum wells to study electron transport through individual domain walls (DWs) induced at a specific location. These DWs are formed due to hybridization of two counter-propagating edge states with opposite spin polarization. Conduction through DWs is found to be symmetric under magnetic field direction reversal, consistent with the helical nature of these DWs. We observe that long domain walls are in the insulating regime with localization length 4 - 6~$mu$m. In shorter DWs the resistance saturates to a non-zero value at low temperatures. Mesoscopic resistance fluctuations in a magnetic field are investigated. The theoretical model of transport through impurity states within the gap induced by spin-orbit interactions agrees well with the experimental data. Helical DWs have required symmetry for the formation of synthetic p-wave superconductors. Achieved electrostatic control of a single helical domain wall is a milestone on the path to their reconfigurable network and ultimately to a demonstration of braiding of non-Abelian excitations.
We present an electrostatically defined few-electron double quantum dot (QD) realized in a molecular beam epitaxy grown Si/SiGe heterostructure. Transport and charge spectroscopy with an additional QD as well as pulsed-gate measurements are demonstrated. We discuss technological challenges specific for silicon-based heterostructures and the effect of a comparably large effective electron mass on transport properties and tunability of the double QD. Charge noise, which might be intrinsically induced due to strain-engineering is proven not to affect the stable operation of our device as a spin qubit. Our results promise the suitability of electrostatically defined QDs in Si/SiGe heterostructures for quantum information processing.
We report here the results of two-dimensional electron gas based micro-Hall magnetometry measurements and micromagnetic simulations of dipolar coupled nanomagnets of Ni80Fe20 arranged in a double ring-like geometry. We observe that although magnetic force microscopy images exhibit single domain like magnetic states for the nanostructures, their reversal processes may undergo complex behavior. The details of such reversal behavior is observed as specific features in micro-Hall magnetometry data which compares well with the micromagnetic simulation data.
Quantum dot lattices (QDLs) have the potential to allow for the tailoring of optical, magnetic and electronic properties of a user-defined artificial solid. We use a dual gated device structure to controllably tune the potential landscape in a GaAs/AlGaAs two-dimensional electron gas, thereby enabling the formation of a periodic QDL. The current-voltage characteristics, I(V), follow a power law, as expected for a QDL. In addition, a systematic study of the scaling behavior of I(V) allows us to probe the effects of background disorder on transport through the QDL. Our results are particularly important for semiconductor-based QDL architectures which aim to probe collective phenomena.
We have observed the well-kown quantum Hall effect (QHE) in epitaxial graphene grown on silicon carbide (SiC) by using, for the first time, only commercial NdFeB permanent magnets at low temperature. The relatively large and homogeneous magnetic field generated by the magnets, together with the high quality of the epitaxial graphene films, enables the formation of well-developed quantum Hall states at Landau level filling factors $ u=pm 2$, commonly observed with superconducting electro-magnets. Furthermore, the chirality of the QHE edge channels can be changed by a top gate. These results demonstrate that basic QHE physics are experimentally accessible in graphene for a fraction of the price of conventional setups using superconducting magnets, which greatly increases the potential of the QHE in graphene for research and applications.
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