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Register a new userFull Dynamic Control of In-plane Elastic Stress Tensor in Nanomembranes
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Added by
Javier Mart\\'in-S\\'anchez
Publication date
2015
fields
Physics
and research's language is
English
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Strain engineering allows the physical properties of materials and devices to be widely tailored, as paradigmatically demonstrated by strained transistors and semiconductor lasers employed in consumer electronics. For this reason, its potential impact on our society has been compared to that of chemical alloying. Although significant progress has been made in the last years on strained nanomaterials, strain fields (which are of tensorial nature, with six independent components) are still mostly used in a scalar and/or static fashion. Here we present a new class of strain actuators which allow the three components of the in-plane stress tensor in a nanomembrane to be independently and reversibly controlled. The actuators are based on monolithic piezoelectric substrates, which are micro-machined via femtosecond-laser processing. Their functionality is demonstrated by programming arbitrary stress states in a semiconductor layer, whose light emission is used as a local and sensitive strain gauge. The results shown in this work open a new route to investigate and make use of strain effects in materials and devices.
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Stress and strain are important factors in determining the mechanical, electronic, and optical properties of materials, relating to each other by the materials elasticity or stiffness. Both are represented by second rank field tensors with, in general, six independent components. Measurements of these quantities are usually achieved by measuring a property that depends on the translational symmetry and periodicity of the crystal lattice, such as optical phonon energies using Raman spectroscopy, the electronic band gap using cathodoluminescence, photoelasticity via the optical birefringence, or Electron Back Scattering Diffraction (EBSD). A reciprocal relationship therefore exists between the maximum sensitivity of the measurements and the spatial resolution. Furthermore, of these techniques, only EBSD and off-axis Raman spectroscopy allow measurement of all six components of the stress tensor, but neither is able to provide full 3D maps. Here we demonstrate a method for measuring the full stress tensor in diamond, using the spectral and optical polarization properties of the photoluminescence from individual nitrogen vacancy (NV) colour centres. We demonstrate a sensitivity of order 10 MPa, limited by local fluctuations in the stress in the sample, and corresponding to a strain of about 10^-5, comparable with the best sensitivity provided by other techniques. By using the colour centres as built-in local sensors, the technique overcomes the reciprocal relationship between spatial resolution and sensitivity and offers the potential for measuring strains as small as 10^-9 at spatial resolution of order 10 nm. Furthermore it provides a straightforward route to volumetric stress mapping. Aside from its value in understanding strain distributions in diamond, this new approach to stress and strain measurement could be adapted for use in micro or nanoscale sensors.
The precise measurement of mechanical stress at the nanoscale is of fundamental and technological importance. In principle, all six independent variables of the stress tensor, which describe the direction and magnitude of compression/tension and shear stress in a solid, can be exploited to tune or enhance the properties of materials and devices. However, existing techniques to probe the local stress are generally incapable of measuring the entire stress tensor. Here, we make use of an ensemble of atomic-sized in-situ strain sensors in diamond (nitrogen-vacancy defects) to achieve spatial mapping of the full stress tensor, with a sub-micrometer spatial resolution and a sensitivity of the order of 1 MPa (corresponding to a strain of less than $10^{-6}$). To illustrate the effectiveness and versatility of the technique, we apply it to a broad range of experimental situations, including mapping the elastic stress induced by localized implantation damage, nano-indents and scratches. In addition, we observe surprisingly large stress contributions from functional electronic devices fabricated on the diamond, and also demonstrate sensitivity to deformations of materials in contact with the diamond. Our technique could enable in-situ measurements of the mechanical response of diamond nanostructures under various stimuli, with potential applications in strain engineering for diamond-based quantum technologies and in nanomechanical sensing for on-chip mass spectroscopy.
We study the coexistence of strain- and charge-mediated magnetoelectric coupling in a cobalt (0-7 nm) wedge on ferroelectric [Pb(Mg$_{1/3}$/Nb$_{2/3}$)O$_{3}$]$_{0.68}$-[PbTiO$_{3}$]$_{0.32}$ (011) using surface-sensitive x-ray magnetic circular dichroism spectroscopy at the Co L$_{3,2}$ edges. Three distinct electric field driven remanent magnetization states can be set in the Co film at room temperature. Ab-initio density functional theory calculations unravel the relative contributions of both strain and charge to the observed magnetic anisotropy changes illustrating magnetoelectro-elastic coupling at artificial multiferroic interfaces.
Most of the commercially important alloys are multicomponent, producing multiphase microstructures as a result of processing. When the coexisting phases are elastically coherent, the elastic interactions between these phases play a major role in the development of microstructures. To elucidate the key effects of elastic stress on microstructural evolution when more than two misfitting phases are present in the microstructure, we have developed a microelastic phase-field model in two dimensions to study phase separation in ternary alloy system. Numerical solutions of a set of coupled Cahn-Hilliard equations for the composition fields govern the spatiotemporal evolution of the three-phase microstructure. The model incorporates coherency strain interactions between the phases using Khachaturyans microelasticity theory. We systematically vary the misfit strains (magnitude and sign) between the phases along with the bulk alloy composition to study their effects on the morphological development of the phases and the resulting phase separation kinetics. We also vary the ratio of interfacial energies between the phases to understand the interplay between elastic and interfacial energies on morphological evolution. The sign and degree of misfit affect strain partitioning between the phases during spinodal decomposition, thereby affecting their compositional history and morphology. Moreover, strain partitioning affects solute partitioning and alters the kinetics of coarsening of the phases. The phases associated with higher misfit strain appear coarser and exhibit wider size distribution compared to those having lower misfit. When the interfacial energies satisfy complete wetting condition, phase separation leads to development of stable core-shell morphology depending on the misfit between the core (wetted) and the shell (wetting) phases.
The 5d pyrochlore oxide Cd2Re2O7 exhibits successive phase transitions from a cubic pyrochlore structure (phase I) to a tetragonal structure without inversion symmetry below Ts1 of ~200 K (phase II) and further to another noncentrosymmetric tetragonal structure below Ts2 of ~120 K (phase III). The two low-temperature phases may be characterized by odd-parity multipolar orders induced by the Fermi liquid instability of the spin-orbit-coupled metal. To control the tetragonal domains generated by the transitions and to obtain a single-domain crystal for the measurements of anisotropic properties, we prepared single crystals with the (0 0 1) surface and applied biaxial and uniaxial stresses along the plane. Polarizing optical microscopy observations revealed that inducing a small strain of approximately 0.05% could flip the twin domains ferroelastically in a reversible fashion at low temperatures, which evidences that the tetragonal deformation switches at Ts2 between c > a for phase II and c < a for phase III. Resistivity measurements using single-domain crystals under uniaxial stress showed that the anisotropy was maximum at around Ts2 and turned over across Ts2: resistivity along the c axis is larger (smaller) than that along the a axis by ~25% for phase II (III) at around Ts2. These large anisotropies probably originate from spin-dependent scattering in the spin-split Fermi surfaces of the cluster electric toroidal quadrupolar phases of Cd2Re2O7.
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