We succeed in enhancement of a superconducting transition temperature (Tc) for NdO0.7F0.3BiS2 single crystal by partial substitution of Pb for Bi. The Tc increases with increasing Pb concentration until 6%. The maximum Tczero is 5.6 K, which is the highest value among BiS2 based superconductors synthesized under an ambient pressure. Pb substitution for Bi induces lattice shrinkage along the c axis. These results reflect that superconductivity in this system is responsive to the lattice strain.
We investigated the crystal structure and superconducting properties of As-grown and high-pressure-annealed PrO0.5F0.5BiS2. We found that the high-pressure annealing generates uniaxial lattice contraction along the c axis. Both As-grown and high-pressure-annealed PrO0.5F0.5BiS2 show bulk superconductivity. The Tc of PrO0.5F0.5BiS2 is clearly enhanced from Tczero = 3.6 K to Tczero = 5.5 K by high-pressure annealing. Unexpectedly, the semiconducting characteristics is relatively enhanced by high-pressure annealing. Namely, we assume that the enhancement of Tc can not be understood by an increase of electron carriers. Having considered these facts, we conclude that the enhancement of Tc correlates with uniaxial lattice contraction along the c axis in PrO0.5F0.5BiS2.
We investigate the external hydrostatic pressure effect on the superconducting transition temperature (Tc) of new layered superconductors Bi4O4S3 and NdO0.5F0.5BiS2. Though the Tc is found to have moderate decrease from 4.8 K to 4.3 K (dTconset/dP = -0.28 K/GPa) for Bi4O4S3 superconductor, the same increases from 4.6 K to 5 K (dTconset/dP = 0.44 K/GPa) upto 1.31 GPa followed by a sudden decrease from 5 K to 4.7 K upto 1.75 GPa for NdO0.5F0.5BiS2 superconductor. The variation of Tc in these systems may be correlated to increase or decrease of the charge carriers in the density of states under externally applied pressure.
We report the electrical resistivity measurements under pressure for the recently discovered BiS2-based layered superconductors Bi4O4S3 and La(O,F)BiS2. In Bi4O4S3, the transition temperature Tc decreases monotonically without a distinct change in the metallic behavior in the normal state. In La(O,F)BiS2, on the other hand, Tc initially increases with increasing pressure and then decreases above ? 1 GPa. The semiconducting behavior in the normal state is suppressed markedly and monotonically, whereas the evolution of Tc is nonlinear. The strong suppression of the semiconducting behavior without doping in La(O,F)BiS2 suggests that the Fermi surface is located in the vicinity of some instability. In the present study, we elucidate that the superconductivity in the BiS2 layer favors the Fermi surface at the boundary between the semiconducting and metallic behaviors.
High-quality Bi$_{2-x}$Pb$_{x}$Sr$_2$CaCu$_2$O$_{8+delta}$ (Bi2212) single crystals have been successfully grown by the traveling solvent floating zone technique with a wide range of Pb substitution ($x=0-0.8$). The samples are characterized by transmission electron microscope (TEM) and measured by high resolution laser-based angle-resolved photoemission spectroscopy (ARPES) with different photon energies. A systematic evolution of the electronic structure and superstructure with Pb substitution has been revealed for the first time. The superstructure shows a significant change with Pb substitution and the incommensurate modulation vector ($textbf{Q}$) decreases with increasing Pb substitution. In the meantime, the superstructure intensity from ARPES measurements also decreases dramatically with increasing Pb concentration. The superstructure in Bi2212 can be effectively suppressed by Pb substitution and it nearly disappears with a Pb substitution of $x=0.8$. We also find that the superstructure bands in ARPES measurements depend sensitively on the photon energy of lasers used; they can become even stronger than the main band when using a laser photon energy of 10.897 eV. These results provide important information on the origin of the incommensurate superstructure and its control and suppression in bismuth-based high temperature superconductors.
Investigation of isotope effects on superconducting transition temperature (Tc) is one of the useful methods to examine whether electron-phonon interaction is essential for pairing mechanisms. The layered BiCh2-based (Ch: S, Se) superconductor family is a candidate for unconventional superconductors, because unconventional isotope effects have previously been observed in La(O,F)BiSSe and Bi4O4S3. In this study, we investigated the isotope effects of 32S and 34S in the high-pressure phase of (Sr,La)FBiS2, which has a monoclinic crystal structure and a higher Tc of 10 K under high pressures, and observed conventional-type isotope shifts in Tc. The conventional-type isotope effects in the monoclinic phase of (Sr,La)FBiS2 are different from the unconventional isotope effects observed in La(O,F)BiSSe and Bi4O4S3, which have a tetragonal structure. The obtained results suggest that the pairing mechanisms of BiCh2-based superconductors could be switched by a structural-symmetry change in the superconducting layers induced by pressure effects.
S. Demura
,Y. Fujisawa
,S. Otsuki
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(2015)
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"Enhancement of Tc in BiS2 based superconductors NdO0.7F0.3BiS2 by substitution of Pb for Bi"
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Satoshi Demura
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