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Register a new userDynamical current-induced ferromagnetic and antiferromagnetic resonances
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Added by
Filipe S. M. Guimar\\~aes
Publication date
2015
fields
Physics
and research's language is
English
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We demonstrate that ferromagnetic and antiferromagnetic excitations can be triggered by the dynamical spin accumulations induced by the bulk and surface contributions of the spin Hall effect. Due to the spin-orbit interaction, a time-dependent spin density is generated by an oscillatory electric field applied parallel to the atomic planes of Fe/W(110) multilayers. For symmetric trilayers of Fe/W/Fe in which the Fe layers are ferromagnetically coupled, we demonstrate that only the collective out-of-phase precession mode is excited, while the uniform (in-phase) mode remains silent. When they are antiferromagnetically coupled, the oscillatory electric field sets the Fe magnetizations into elliptical precession motions with opposite angular velocities. The manipulation of different collective spin-wave dynamical modes through the engineering of the multilayers and their thicknesses may be used to develop ultrafast spintronics devices. Our work provides a general framework that probes the realistic responses of materials in the time or frequency domain.
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A magnetic bimeron is a topologically non-trivial spin texture carrying an integer topological charge, which can be regarded as the counterpart of skyrmion in easy-plane magnets. The controllable creation and manipulation of bimerons are crucial for practical applications based on topological spin textures. Here, we analytically and numerically study the dynamics of an antiferromagnetic bimeron driven by a spin current. Numerical simulations demonstrate that the spin current can create an isolated bimeron in the antiferromagnetic thin film via the damping-like spin torque. The spin current can also effectively drive the antiferromagnetic bimeron without a transverse drift. The steady motion of an antiferromagnetic bimeron is analytically derived and is in good agreement with the simulation results. Also, we find that the alternating-current-induced motion of the antiferromagnetic bimeron can be described by the Duffing equation due to the presence of the nonlinear boundary-induced force. The associated chaotic behavior of the bimeron is analyzed in terms of the Lyapunov exponents. Our results demonstrate the inertial dynamics of an antiferromagnetic bimeron, and may provide useful guidelines for building future bimeron-based spintronic devices.
Topological spin textures can be found in both two-dimensional and three-dimensional nanostructures, which are of great importance to advanced spintronic applications. Here we report the current-induced skyrmion tube dynamics in three-dimensional synthetic antiferromagnetic (SyAF) bilayer and multilayer nanostructures. It is found that the SyAF skyrmion tube made of thinner sublayer skyrmions is more stable during its motion, which ensures that a higher speed of the skyrmion tube can be reached effectively at larger driving current. In the SyAF multilayer with a given total thickness, the current-induced deformation of the SyAF skyrmion tube decreases with an increasing number of interfaces; namely, the rigidity of the SyAF skyrmion tube with a given thickness increases with the number of ferromagnetic (FM) layers. For the SyAF multilayer with an even number of FM layers, the skyrmion Hall effect can be eliminated when the thicknesses of all FM layers are identical. Larger damping parameter leads to smaller deformation and slower speed of the SyAF skyrmion tube. Larger fieldlike torque leads to larger deformation and a higher speed of the SyAF skyrmion tube. Our results are useful for understanding the dynamic behaviors of three-dimensional topological spin textures and may provide guidelines for building SyAF spintronic devices.
Experimental results of rectification of a constant wave radio frequency (RF) current flowing in a single-layered ferromagnetic wire are presented. We show that a detailed external magnetic field dependence of the RF current induced a direct-current voltage spectrum. The mechanism of the rectification is discussed in a term of the spin transfer torque, and the rectification is closely related to resonant spin wave excitation with the assistant of the spin-polarized RF current. The micromagnetic simulation taking into account the spin transfer torque provides strong evidence which supports the generation of spin wave excitation by the RF current.
Current-induced dynamics in spin valves including composite free layer with antiferromagnetic interlayer exchange coupling is studied theoretically within the diffusive transport regime. We show that current-induced dynamics of a synthetic antiferromagnet is significantly different from dynamics of a synthetic ferrimagnet. From macrospin simulations we obtain conditions for switching the composite free layer, as well as for appearance of various self-sustained dynamical modes. Numerical simulations are compared with simple analytical models of critical current based on linearized Landau-Lifshitz-Gilbert equation.
There is accelerating interest in developing memory devices using antiferromagnetic (AFM) materials, motivated by the possibility for electrically controlling AFM order via spin-orbit torques, and its read-out via magnetoresistive effects. Recent studies have shown, however, that high current densities create non-magnetic contributions to resistive switching signals in AFM/heavy metal (AFM/HM) bilayers, complicating their interpretation. Here we introduce an experimental protocol to unambiguously distinguish current-induced magnetic and nonmagnetic switching signals in AFM/HM structures, and demonstrate it in IrMn$_3$/Pt devices. A six-terminal double-cross device is constructed, with an IrMn$_3$ pillar placed on one cross. The differential voltage is measured between the two crosses with and without IrMn$_3$ after each switching attempt. For a wide range of current densities, reversible switching is observed only when write currents pass through the cross with the IrMn$_3$ pillar, eliminating any possibility of non-magnetic switching artifacts. Micromagnetic simulations support our findings, indicating a complex domain-mediated switching process.
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