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We show that harmonic vibrations in amorphous silicon can be decomposed to transverse and longitudinal components in all frequency range even in the absence of the well defined wave vector ${bf q}$. For this purpose we define the transverse component of the eigenvector with given $omega$ as a component, which does not change the volumes of Voronoi cells around atoms. The longitudinal component is the remaining orthogonal component. We have found the longitudinal and transverse components of the vibrational density of states for numerical model of amorphous silicon. The vibrations are mostly transverse below 7 THz and above 15 THz. In the frequency interval in between the vibrations have a longitudinal nature. Just this sudden transformation of vibrations at 7 THz from almost transverse to almost longitudinal ones explains the prominent peak in the diffusivity of the amorphous silicon just above 7 THz.
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Numerical studies of amorphous silicon in harmonic approximation show that the highest 3.5% of vibrational normal modes are localized. As vibrational frequency increases through the boundary separating localized from delocalized modes, near omega_c=70meV, (the mobility edge) there is a localization-delocalization (LD) transition, similar to a second-order thermodynamic phase transition. By a numerical study on a system with 4096 atoms, we are able to see exponential decay lengths of exact vibrational eigenstates, and test whether or not these diverge at omega_c. Results are consistent with a localization length xi which diverges above omega_c as (omega-omega_c)^{-p} where the exponent is p = 1.3 +/- 0.5. Below the mobility edge we find no evidence for a diverging correlation length. Such an asymmetry would contradict scaling ideas, and we suppose it is a finite-size artifact. If the scaling regime is narrower than our 1 meV resolution, then it cannot be seen directly on our finite system.
We show that the low-frequency regime of the density of states of structural glass formers is crucially sensitive to the stress-ensemble from which the configurations are sampled. Specifically, in two dimensions, an exactly isotropic ensemble with zero shear stress fluctuations, displays a $D(omega_{min}) sim omega^{5}_{min}$ regime, as opposed to the $omega^{4}_{min}$ regime observed under unstrained conditions. We also study an ensemble of strained amorphous solids near a plastic event. We show that the minimum eigenvalue distribution at a strain $gamma$ near the plastic event occurring at $gamma_{P}$, displays a collapse when scaled by $sqrt{gamma_P - gamma}$, and with the number of particles as $N^{-0.22}$. Notably, at low-frequencies, this scaled distribution displays a robust $D(omega_{min}) sim omega^{6}_{min}$ power-law regime, which survives in the large $N$ limit. Finally, we probe the universal properties of this ensemble through a characterization of the second and third eigenvalues of the Hessian matrix near a plastic event.
It was found that NMR properties of both superfluid phases of $^3$He in anisotropic aerogel can be described in terms of the bulk superfluid order parameters with the orbital order parameter vector fixed by anisotropy of the aerogel sample. It was also shown that by a proper squeezing it is possible to get the aerogel sample with isotropic NMR properties.
In $e$-beam evaporated amorphous silicon ($a$-Si), the densities of two-level systems (TLS), $n_{0}$ and $overline{P}$, determined from specific heat $C$ and internal friction $Q^{-1}$ measurements, respectively, have been shown to vary by over three orders of magnitude. Here we show that $n_{0}$ and $overline{P}$ are proportional to each other with a constant of proportionality that is consistent with the measurement time dependence proposed by Black and Halperin and does not require the introduction of additional anomalous TLS. However, $n_{0}$ and $overline{P}$ depend strongly on the atomic density of the film ($n_{rm Si}$) which depends on both film thickness and growth temperature suggesting that the $a$-Si structure is heterogeneous with nanovoids or other lower density regions forming in a dense amorphous network. A review of literature data shows that this atomic density dependence is not unique to $a$-Si. These findings suggest that TLS are not intrinsic to an amorphous network but require a heterogeneous structure to form.
We report specific heat and thermal conductivity of gadolinium- and yttrium-doped amorphous silicon thin films measured using silicon-nitride membrane-based microcalorimeters. Addition of gadolinium or yttrium to the amorphous silicon network reduces the thermal conductivity over a wide temperature range while significantly increasing the specific heat. This result indicates that a large number of non-propagating states are added to the vibrational spectrum that are most likely caused either by localized vibration of the dopant atom in a Si cage, or softening of the material forming the cage structures. High-resolution cross-sectional electron micrographs reveal columnar features in Gd-doped material which do not appear in pure amorphous silicon. Scattering from both the nanoscaled columns and the filled-cage structures play a role in the reduced thermal conductivity in the rare-earth doped amorphous semiconductor. The overall result is an amorphous solid with a large bump in $C/T^{3}$ and no plateau in thermal conductivity.
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