Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userTransparent Electrodes for High E-Field Production Using A Buried ITO Layer
69
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We present a design and characterization of optically transparent electrodes suitable for atomic and molecular physics experiments where high optical access is required. The electrodes can be operated in air at standard atmospheric pressure and do not suffer electrical breakdown even for electric fields far exceeding the dielectric breakdown of air. This is achieved by putting an ITO coated dielectric substrate inside a stack of dielectric substrates, which prevents ion avalanche resulting from Townsend discharge. With this design, we observe no arcing for fields of up to 120 kV/cm. Using these plates, we directly verify the production of electric fields up to 18~kV/cm inside a quartz vacuum cell by a spectroscopic measurement of the dc Stark shift of the $5^2S_{1/2} rightarrow 5^2P_{3/2}$ transition for a cloud of laser cooled Rubidium atoms. We also report on the shielding of the electric field and residual electric fields that persist within the vacuum cell once the electrodes are discharged. In addition, we discuss observed atom loss that results from the motion of free charges within the vacuum. The observed asymmetry of these phenomena on the bias of the electrodes suggests that field emission of electrons within the vacuum is primarily responsible for these effects and may indicate a way of mitigating them.
rate research
Read More
The Ra EDM experiment uses a pair of high voltage electrodes to measure the atomic electric dipole moment of $^{225}$Ra. We use identical, plane-parallel electrodes with a primary high gradient surface of 200 mm$^2$ to generate reversible DC electric fields. Our statistical sensitivity is linearly proportional to the electric field strength in the electrode gap. We adapted surface decontamination and processing techniques from accelerator physics literature to chemical polish and clean a suite of newly fabricated large-grain niobium and grade-2 titanium electrodes. Three pairs of niobium electrodes and one pair of titanium electrodes were discharge-conditioned with a custom high voltage test station at electric field strengths as high as $+52.5$ kV/mm and $- 51.5$ kV/mm over electrode gap sizes ranging from 0.4 mm to 2.5 mm. One pair of large-grain niobium electrodes was discharge-conditioned and validated to operate at $pm 20$ kV/mm with steady-state leakage current $leq 25$ pA ($1sigma$) and a polarity-averaged $98 pm 19$ discharges per hour. These electrodes were installed in the Ra EDM experimental apparatus, replacing a copper electrode pair, and were revalidated to $pm 20$ kV/mm. The niobium electrodes perform at an electric field strength 3.1 times larger than the legacy copper electrodes and are ultimately limited by the maximum output of our 30 kV bipolar power supply.
This paper reports on the fabrication and characterization of a high purity monocrystalline diamond detector with buried electrodes realized by the selective damage induced by a focused 6 MeV carbon ion beam scanned over a pattern defined at the micrometric scale. A suitable variable-thickness mask was deposited on the diamond surface in order to modulate the penetration depth of the ions and to shallow the damage profile toward the surface. After the irradiation, the sample was annealed at high temperature in order to promote the conversion to the graphitic phase of the end-of-range regions which experienced an ion-induced damage exceeding the damage threshold, while recovering the sub-threshold damaged regions to the highly resistive diamond phase. This process provided conductive graphitic electrodes embedded in the insulating diamond matrix; the presence of the variable-thickness mask made the terminations of the channels emerging at the diamond surface and available to be connected to an external electronic circuit. In order to evaluate the quality of this novel microfabrication procedure based on direct ion writing, we performed frontal Ion Beam Induced Charge (IBIC) measurements by raster scanning focused MeV ion beams onto the diamond surface. Charge collection efficiency (CCE) maps were measured at different bias voltages. The interpretation of such maps was based on the Shockley-Ramo-Gunn formalism.
The magnetic-field stability of a mass spectrometer plays a crucial role in precision mass measurements. In the case of mass determination of short-lived nuclides with a Penning trap, major causes of instabilities are temperature fluctuations in the vicinity of the trap and pressure fluctuations in the liquid helium cryostat of the superconducting magnet. Thus systems for the temperature and pressure stabilization of the Penning trap mass spectrometer ISOLTRAP at the ISOLDE facility at CERN have been installed. A reduction of the fluctuations by at least one order of magnitude downto dT=+/-5mK and dp=+/-50mtorr has been achieved, which corresponds to a relative frequency change of 2.7x10^{-9} and 1.5x10^{-10}, respectively. With this stabilization the frequency determination with the Penning trap only shows a linear temporal drift over several hours on the 10 ppb level due to the finite resistance of the superconducting magnet coils.
An integrated system of hardware and software allowing precise definition of arbitrarily oriented magnetic fields up to |B| = 1 {mu}T within a five-layer mumetal shield is described. The system is calibrated with reference to magnetic resonance observed between Zeeman states of the 6S$_{1/2}$ F = 4 $^{133}$Cs ground state. Magnetic field definition over the full 4{pi} solid angle is demonstrated, with one-sigma tolerances in magnitude, orientation and gradient of {delta}|B| = 0.94 nT, {delta}{theta} = 5.9 mrad and {delta}$ abla$ B = 13.0 pT/mm, respectively. This field control is used to empirically map Mx magnetometer signal amplitude as a function of the static field (B0) orientation.
We report that 30-inch scale multiple roll-to-roll transfer and wet chemical doping considerably enhance the electrical properties of the graphene films grown on roll-type Cu substrates by chemical vapor deposition. The resulting graphene films shows a sheet resistance as low as ~30 Ohm/sq at ~90 % transparency which is superior to commercial transparent electrodes such as indium tin oxides (ITO). The monolayer of graphene shows sheet resistances as low as ~125 Ohm/sq with 97.4% optical transmittance and half-integer quantum Hall effect, indicating the high-quality of these graphene films. As a practical application, we also fabricated a touch screen panel device based on the graphene transparent electrodes, showing extraordinary mechanical and electrical performances.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
