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Register a new userObservation of surface states on heavily indium doped SnTe(111), a superconducting topological crystalline insulator
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The topological crystalline insulator tin telluride is known to host superconductivity when doped with indium (Sn$_{1-x}$In$_{x}$Te), and for low indium contents ($x=0.04$) it is known that the topological surface states are preserved. Here we present the growth, characterization and angle resolved photoemission spectroscopy analysis of samples with much heavier In doping (up to $xapprox0.4$), a regime where the superconducting temperature is increased nearly fourfold. We demonstrate that despite strong p-type doping, Dirac-like surface states persist.
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Recently, the topological classification of electronic states has been extended to a new class of matter known as topological crystalline insulators. Similar to topological insulators, topological crystalline insulators also have spin-momentum locked surface states; but they only exist on specific crystal planes that are protected by crystal reflection symmetry. Here, we report an ultra-low temperature scanning tunneling microscopy and spectroscopy study on topological crystalline insulator SnTe nanoplates grown by molecular beam epitaxy. We observed quasiparticle interference patterns on the SnTe (001) surface that can be interpreted in terms of electron scattering from the four Fermi pockets of the topological crystalline insulator surface states in the first surface Brillouin zone. A quantitative analysis of the energy dispersion of the quasiparticle interference intensity shows two high energy features related to the crossing point beyond the Lifshitz transition when the two neighboring low energy surface bands near the point merge. A comparison between the experimental and computed quasiparticle interference patterns reveals possible spin texture of the surface states.
We present angle resolved photoemission spectroscopy measurements of the surface states on in-situ grown (111) oriented films of Pb$_{1-x}$Sn$_{x}$Se, a three dimensional topological crystalline insulator. We observe surface states with Dirac-like dispersion at $bar{Gamma}$ and $bar{M}$ in the surface Brillouin zone, supporting recent theoretical predictions for this family of materials. We study the parallel dispersion isotropy and Dirac-point binding energy of the surface states, and perform tight-binding calculations to support our findings. The relative simplicity of the growth technique is encouraging, and suggests a clear path for future investigations into the role of strain, vicinality and alternative surface orientations in (Pb,Sn)Se compounds.
Topological insulators materialize a topological quantum state of matter where unusual gapless metallic state protected by time-reversal symmetry appears at the edge or surface. Their discovery stimulated the search for new topological states protected by other symmetries, and a recent theory predicted the existence of topological crystalline insulators (TCIs) in which the metallic surface states are protected by mirror symmetry of the crystal. However, its experimental verification has not yet been reported. Here we show the first and definitive experimental evidence for the TCI phase in tin telluride (SnTe) which was recently predicted to be a TCI. Our angle-resolved photoemission spectroscopy shows clear signature of a metallic Dirac-cone surface band with its Dirac point slightly away from the edge of the surface Brillouin zone in SnTe. On the other hand, such a gapless surface state is absent in a cousin material lead telluride (PbTe), in line with the theoretical prediction. Our result establishes the presence of a TCI phase, and opens new avenues for exotic topological phenomena.
Topological crystalline insulators (TCIs) possess metallic surface states protected by crystalline symmetry, which are a versatile platform for exploring topological phenomena and potential applications. However, progress in this field has been hindered by the challenge to probe optical and transport properties of the surface states owing to the presence of bulk carriers. Here we report infrared (IR) reflectance measurements of a TCI, (001) oriented $Pb_{1-x}Sn_{x}Se$ in zero and high magnetic fields. We demonstrate that the far-IR conductivity is unexpectedly dominated by the surface states as a result of their unique band structure and the consequent small IR penetration depth. Moreover, our experiments yield a surface mobility of 40000 $cm^{2}/(Vs)$, which is one of the highest reported values in topological materials, suggesting the viability of surface-dominated conduction in thin TCI crystals. These findings pave the way for exploring many exotic transport and optical phenomena and applications predicted for TCIs.
The characterization and applications of topological insulators depend critically on their protected surface states, which, however, can be obscured by the presence of trivial dangling bond states. Our first principle calculations show that this is the case for the pristine $(111)$ surface of SnTe. Yet, the predicted surface states unfold when the dangling bond states are passivated in proper chemisorption. We further extract the anisotropic Fermi velocities, penetration lengths and anisotropic spin textures of the unfolded $barGamma$- and $bar M$-surface states, which are consistent with the theory in http://dx.doi.org/10.1103/PhysRevB.86.081303 Phys. Rev. B 86, 081303 (R). More importantly, this chemisorption scheme provides an external control of the relative energies of different Dirac nodes, which is particularly desirable in multi-valley transport.
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