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Register a new userSuperconductivity in La1-xSmxO0.5F0.5BiS2 (x = 0.2, 0.8) under hydrostatic pressure
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We have investigated the pressure effect on the newly discovered samarium doped La1-xSmxO0.5F0.5BiS2 superconductors. More than threefold increase in Tc (10.3 K) is observed with external pressure (at ~1.74 GPa at a rate of 4.08 K/GPa)) for x = 0.2 composition. There is a concomitant large improvement in the quality of the superconducting transition. Beyond this pressure Tc decreases monotonously at the rate of -2.09 K/GPa. In the x = 0.8 sample, we do not observe any enhancement in Tc with application of pressure (up to 1.76 GPa). The semiconducting behavior observed in the normal state resistivity of both of the samples is significantly subdued with the application of pressure which, if interpreted invoking thermal activation process, implies that the activation energy gap of the carriers is significantly reduced with pressure. We believe these observations should generate further interest in the La1-xSmxO0.5F0.5BiS2 superconductors.
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We report the effect of hydrostatic pressure (0-1.97GPa) on the superconductivity of BiS2 based CeO0.5F0.5BiS2 compound. The CeO0.5F0.5BiS2 superconductor was synthesized by the solid state reaction route and the compound is crystallized in tetragonal P4/nmm space group. The studied compound shows superconductivity with transition temperature of 2.5K (Tconset) at ambient pressure, which has been enhanced to 8 K at applied pressure of 1.97 GPa. The observed normal resistivity exhibited semiconducting behavior. The data of normal state resistivity R(T) has been fitted by activation type equation and it is found that the energy gap is significantly reduced with pressure. Resistivity measurements under magnetic field for the highest applied pressure of 1.97GPa (Tconset = 8K) exhibits the upper critical field of above 5Tesla. The observation of fourfold increase in Tc accompanied with improved normal state conduction under hydrostatic pressure on CeO0.5F0.5BiS2 superconductor calls for the attention of solid state physics community.
We report the impact of hydrostatic pressure on the superconductivity and normal state resistivity of FeTe0.5Se0.5 superconductor. At the ambient pressure the FeTe0.5Se0.5 compound shows the superconducting transition temperature Tconset at above 13K and TcR=0 at 11.5K. We measure pressure dependent resistivity from 250K to 5K, which shows that the normal state resistivity increases initially for the applied pressures of up to 0.55GPa and then the same is decreased monotonically with increasing pressure of up to 1.97GPa. On the other hand the superconducting transition temperatures (Tconset and TcR=0) increase monotonically with increasing pressure. Namely the Tconset increases from 13K to 25K and TcR=0 from 11.5K to 20K for the pressures range of 0-1.97GPa. Our results suggest that superconductivity in this class of Fe-based compounds is very sensitive to pressure as the estimated pressure coefficient dTc(onset)/dP is 5.8K/GPa. It may be suggested that FeTe0.5Se0.5 superconductor is a strong electron correlated system. The enhancement of Tc with applying pressure is mainly attributed to an increase of charge carriers at Fermi surface.
Polycrystalline samples of layered pnictogen diselenide NdO0.8F0.2Sb1-xBixSe2 (x = 0 to 0.8) were successfully synthesized by solid-state reactions. Electrical resistivity in the synthesized samples was systematically decreased with an increase in Bi content x. Crystal structure analysis using synchrotron X-ray diffraction suggests that insulator to metal transition upon Bi doping correlates with anomalous change in c-axis length and/or corrugation in conducting layer. The emergence of superconductivity under high pressure is demonstrated using diamond anvil cell (DAC) with boron-doped diamond electrodes, for x = 0.3 and 0.7 as the representative samples. For Sb-rich one (x = 0.3), we observed a superconducting transition with Tconset = 5.3 K at 50 GPa, which is the first-ever report of the superconductivity in layered SbCh2-based (Ch: chalcogen) compounds. The Tconset of x = 0.3 increased with increasing pressure and reached 7.9 K at 70.8 GPa, followed by the gradual decrease in Tc up to 90 GPa. For Bi-rich one (x = 0.7), a superconducting transition with Tconset = 5.9 K was observed at 43.5 GPa, which is the almost comparable to that of x = 0.3; besides, upper critical field (Hc2) is evaluated to be ~10 T for x = 0.7, which is higher than that of x = 0.3 (Hc2 = 6.7 T at 50 GPa).
We investigate the hydrostatic pressure dependence of interfacial superconductivity occurring at the atomically sharp interface between two non-superconducting materials: the topological insulator (TI) Bi2Te3 and the parent compound Fe1+yTe of the chalcogenide iron based superconductors. Under pressure, a significant increase in the superconducting transition temperature Tc is observed. We trace the pressure dependence of a superconducting twin gap structure by Andreev reflection point contact spectroscopy (PCARS), which shows that a large superconducting gap associated with the interfacial superconductivity increases along with Tc. A second smaller gap, which is attributed to proximity-induced superconductivity in the TI layer, increases first, but then reaches a maximum and appears to be gradually suppressed at higher pressure. We interpret our data in the context of a pressure-induced doping effect of the interface, in which charge is transferred from the TI layer to the interface and the interfacial superconductivity is enhanced. This demonstrates the important role of the TI in the interfacial superconductivity mechanism.
Critical current density (Jc), thermal activation energy (U0), and upper critical field (Hc2) of La1-xSmxO0.5F0.5BiS2 (x = 0.2, 0.8) superconductors are investigated from magnetic field dependent r{ho}(T) studies. The estimated upper critical field (Hc2) has low values of 1.04 T for x = 0.2 and 1.41 T for x = 0.8. These values are lower than Sm free LaO0.5F0.5BiS2 superconductor (1.9 T). The critical current density (Jc) is estimated to be 1.35*105 A/cm2 and 5.07 *105 A/cm2 (2 K) for x = 0.2 and 0.8 respectively, using the Beans model. The thermal activation energy (U0/kB) is 61 K for x = 0.2 and 140 K for x =0.8 as calculated from Arrhenius plots at low magnetic field (1 T) and indicates a strong flux pinning potential which might be co-existing with applied magnetic field.
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