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Surface effects on the Mott-Hubbard transition in archetypal V$_2$O$_3$

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 Added by Gabriel Lantz
 Publication date 2015
  fields Physics
and research's language is English




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We present an experimental and theoretical study exploring surface effects on the evolution of the metal-insulator transition in the model Mott-Hubbard compound Cr-doped V$_2$O$_3$. We find a microscopic domain formation that is clearly affected by the surface crystallographic orientation. Using scanning photoelectron microscopy and X-ray diffraction, we find that surface defects act as nucleation centers for the formation of domains at the temperature-induced isostructural transition and favor the formation of microscopic metallic regions. A density functional theory plus dynamical mean field theory study of different surface terminations shows that the surface reconstruction with excess vanadyl cations leads to doped, and hence more metallic surface states, explaining our experimental observations.



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We have performed sound velocity measurements in (V$_{1-x}$Cr$_x$)$_2$O$_3$ in the vicinity of the critical point of the first order Mott transition line. The pressure sweeps at constant temperature reveal a large dip in the $c_{33}$ compression modulus, this dip sharpens as the critical point is approached. We do not observe signs of criticality on the shear modulus $c_{44}$ which is consistent with a transition governed by a scalar order parameter, in accordance with the DMFT description of the transition. However, the amplitude of the effect is an order of magnitude smaller than the one obtained from DMFT calculations for a single band Hubbard model. We analyze our results using a simple model with the electronic response function obtained from the scaling relations for the conductivity.
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Unveiling the physics that governs the intertwining between the nanoscale self-organization and the dynamics of insulator-to-metal transitions (textit{IMT}) is key for controlling on demand the ultrafast switching in strongly correlated materials and nano-devices. A paradigmatic case is the textit{IMT} in V$_2$O$_3$, for which the mechanism that leads to the nucleation and growth of metallic nano-droplets out of the supposedly homogeneous Mott insulating phase is still a mystery. Here, we combine X-ray photoemission electron microscopy and ultrafast non-equilibrium optical spectroscopy to investigate the early stage dynamics of isolated metallic nano-droplets across the textit{IMT} in V$_2$O$_3$ thin films. Our experiments show that the low-temperature monoclinic antiferromagnetic insulating phase is characterized by the spontaneous formation of striped polydomains, with different lattice distortions. The insulating domain boundaries accommodate the birth of metallic nano-droplets, whose non-equilibrium expansion can be triggered by the photo-induced change of the 3$d$-orbital occupation. We address the relation between the spontaneous nanotexture of the Mott insulating phase in V$_2$O$_3$ and the timescale of the metallic seeds growth. We speculate that the photoinduced metallic growth can proceed along a non-thermal pathway in which the monoclinic lattice symmetry of the insulating phase is partially retained.
We present the observation of an isostructural Mott insulator-metal transition in van-der-Waals honeycomb antiferromagnet V$_{0.9}$PS$_3$ through high-pressure x-ray diffraction and transport measurements. The MPX$_3$ family of magnetic van-der-Waals materials (M denotes a first row transition metal and X either S or Se) are currently the subject of broad and intense attention, but the vanadium compounds have until this point not been studied beyond their basic properties. We observe insulating variable-range-hopping type resistivity in V$_{0.9}$PS$_3$, with a gradual increase in effective dimensionality with increasing pressure, followed by a transition to a metallic resistivity temperature dependence between 112 and 124 kbar. The metallic state additionally shows a low-temperature upturn we tentatively attribute to the Kondo Effect. A gradual structural distortion is seen between 26-80 kbar, but no structural change at higher pressures corresponding to the insulator-metal transition. We conclude that the insulator-metal transition occurs in the absence of any distortions to the lattice - an isostructural Mott transition in a new class of two-dimensional material, and in strong contrast to the behavior of the other MPX$_3$ compounds.
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