No Arabic abstract
Considerable evidence suggests that variations in the properties of topological insulators (TIs) at the nanoscale and at interfaces can strongly affect the physics of topological materials. Therefore, a detailed understanding of surface states and interface coupling is crucial to the search for and applications of new topological phases of matter. Currently, no methods can provide depth profiling near surfaces or at interfaces of topologically inequivalent materials. Such a method could advance the study of interactions. Herein we present a non-invasive depth-profiling technique based on $beta$-NMR spectroscopy of radioactive $^8$Li$^+$ ions that can provide one-dimensional imaging in films of fixed thickness and generates nanoscale views of the electronic wavefunctions and magnetic order at topological surfaces and interfaces. By mapping the $^8$Li nuclear resonance near the surface and 10 nm deep into the bulk of pure and Cr-doped bismuth antimony telluride films, we provide signatures related to the TI properties and their topological non-trivial characteristics that affect the electron-nuclear hyperfine field, the metallic shift and magnetic order. These nanoscale variations in $beta$-NMR parameters reflect the unconventional properties of the topological materials under study, and understanding the role of heterogeneities is expected to lead to the discovery of novel phenomena involving quantum materials.
Non-invasive local probes are needed to characterize bulk defects in binary and ternary chalcogenides. These defects contribute to the non-ideal behavior of topological insulators. We have studied bulk electronic properties via $^{125}$Te NMR in Bi$_2$Te$_3$, Sb$_2$Te$_3$, Bi$_{0.5}$Sb$_{1.5}$Te$_3$, Bi$_2$Te$_2$Se and Bi$_2$Te$_2$S. A distribution of defects gives rise to asymmetry in the powder lineshapes. We show how the Knight shift, line shape and spin-lattice relaxation report on carrier density, spin-orbit coupling and phase separation in the bulk. The present study confirms that the ordered ternary compound Bi$_2$Te$_2$Se is the best TI candidate material at the present time. Our results, which are in good agreement with transport and ARPES studies, help establish the NMR probe as a valuable method to characterize the bulk properties of these materials.
Granular conductors form an artificially engineered class of solid state materials wherein the microstructure can be tuned to mimic a wide range of otherwise inaccessible physical systems. At the same time, topological insulators (TIs) have become a cornerstone of modern condensed matter physics as materials hosting metallic states on the surface and insulating in the bulk. However it remains to be understood how granularity affects this new and exotic phase of matter. We perform electrical transport experiments on highly granular topological insulator thin films of Bi$_2$Se$_3$ and reveal remarkable properties. We observe clear signatures of topological surface states despite granularity with distinctly different properties from conventional bulk TI systems including sharp surface state coupling-decoupling transitions, large surface state penetration depths and exotic Berry phase effects. We present a model which explains these results. Our findings illustrate that granularity can be used to engineer designer TIs, at the same time allowing easy access to the Dirac-fermion physics that is inaccessible in single crystal systems.
Nuclear magnetic resonance (NMR) spectroscopy has approached the limit of single molecule sensitivity, however the spectral resolution is currently insufficient to obtain detailed information on chemical structure and molecular interactions. Here we demonstrate more than two orders of magnitude improvement in spectral resolution by performing correlation spectroscopy with shallow nitrogen-vacancy (NV) magnetic sensors in diamond. In principle, the resolution is sufficient to observe chemical shifts in $sim$1 T magnetic fields, and is currently limited by molecular diffusion at the surface. We measure oil diffusion rates of $D = 0.15 - 0.2$,nm$^2/mathrm{mu}$s within (5 nm)$^3$ volumes at the diamond surface.
In this article, we will give a brief introduction to the topological insulators. We will briefly review some of the recent progresses, from both theoretical and experimental sides. In particular, we will emphasize the recent progresses achieved in China.
Topological crystalline insulators (TCIs) are insulating materials whose topological property relies on generic crystalline symmetries. Based on first-principles calculations, we study a three-dimensional (3D) crystal constructed by stacking two-dimensional TCI layers. Depending on the inter-layer interaction, the layered crystal can realize diverse 3D topological phases characterized by two mirror Chern numbers (MCNs) ($mu_1,mu_2$) defined on inequivalent mirror-invariant planes in the Brillouin zone. As an example, we demonstrate that new TCI phases can be realized in layered materials such as a PbSe (001) monolayer/h-BN heterostructure and can be tuned by mechanical strain. Our results shed light on the role of the MCNs on inequivalent mirror-symmetric planes in reciprocal space and open new possibilities for finding new topological materials.