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Register a new userLoading an Optical Trap with Diamond Nanocrystals Containing Nitrogen-Vacancy Centers from a Surface
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We present a simple and effective method of loading particles into an optical trap in air at atmospheric pressure. Material which is highly absorptive at the trapping laser wavelength, such as tartrazine dye, is used as media to attach photoluminescent diamond nanocrystals. The mix is burnt into a cloud of air-borne particles as the material is swept near the trapping laser focus on a glass slide. Particles are then trapped with the laser used for burning or transferred to a second laser trap at a different wavelength. Evidence of successfully loading diamond nanocrystals into the trap presented includes high sensitivity of the photoluminecscence (PL) to an excitation laser at 520~nm wavelength and the PL spectra of the optically trapped particles. This method provides a convenient technique for the study of the nitrogen-vacancy (NV) centers contained in optically trapped diamond nanocrystals.
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A study of the photophysical properties of nitrogen-vacancy (NV) color centers in diamond nanocrystals of size of 50~nm or below is carried out by means of second-order time-intensity photon correlation and cross-correlation measurements as a function of the excitation power for both pure charge states, neutral and negatively charged, as well as for the photochromic state, where the center switches between both states at any power. A dedicated three-level model implying a shelving level is developed to extract the relevant photophysical parameters coupling all three levels. Our analysis confirms the very existence of the shelving level for the neutral NV center. It is found that it plays a negligible role on the photophysics of this center, whereas it is responsible for an increasing photon bunching behavior of the negative NV center with increasing power. From the photophysical parameters, we infer a quantum efficiency for both centers, showing that it remains close to unity for the neutral center over the entire power range, whereas it drops with increasing power from near unity to approximately 0.5 for the negative center. The photophysics of the photochromic center reveals a rich phenomenology that is to a large extent dominated by that of the negative state, in agreement with the excess charge release of the negative center being much slower than the photon emission process.
The advancement of quantum optical science and technology with solid-state emitters such as nitrogen-vacancy (NV) centers in diamond critically relies on the coherence of the emitters optical transitions. A widely employed strategy to create NV centers at precisely controlled locations is nitrogen ion implantation followed by a high-temperature annealing process. We report on experimental data directly correlating the NV center optical coherence to the origin of the nitrogen atom. These studies reveal low-strain, narrow-optical-linewidth ($<500$ MHz) NV centers formed from naturally-occurring $^{14}$N atoms. In contrast, NV centers formed from implanted $^{15}$N atoms exhibit significantly broadened optical transitions ($>1$ GHz) and higher strain. The data show that the poor optical coherence of the NV centers formed from implanted nitrogen is not due to an intrinsic effect related to the diamond or isotope. These results have immediate implications for the positioning accuracy of current NV center creation protocols and point to the need to further investigate the influence of lattice damage on the coherence of NV centers from implanted ions.
The nitrogen-vacancy (NV) color center in diamond is an atom-like system in the solid-state which specific spin properties can be efficiently used as a sensitive magnetic sensor. An external magnetic field induces Zeeman shifts of the NV center levels which can be measured using Optically Detected Magnetic Resonance (ODMR). In this work, we exploit the ODMR signal of an ensemble of NV centers in order to quantitatively map the vectorial structure of a magnetic field produced by a sample close to the surface of a CVD diamond hosting a thin layer of NV centers. The reconstruction of the magnetic field is based on a maximum-likelihood technique which exploits the response of the four intrinsic orientations of the NV center inside the diamond lattice. The sensitivity associated to a 1 {mu}m^2 area of the doped layer, equivalent to a sensor consisting of approximately 10^4 NV centers, is of the order of 2 {mu}T/sqrt{Hz}. The spatial resolution of the imaging device is 400 nm, limited by the numerical aperture of the optical microscope which is used to collect the photoluminescence of the NV layer. The versatility of the sensor is illustrated by the accurate reconstruction of the magnetic field created by a DC current inside a copper wire deposited on the diamond sample.
We use magnetic-field-dependent features in the photoluminescence of negatively charged nitrogen-vacancy centers to measure magnetic fields without the use of microwaves. In particular, we present a magnetometer based on the level anti-crossing in the triplet ground state at 102.4 mT with a demonstrated noise floor of 6 nT/$sqrt{text{Hz}}$, limited by the intensity noise of the laser and the performance of the background-field power supply. The technique presented here can be useful in applications where the sensor is placed closed to conductive materials, e.g. magnetic induction tomography or magnetic field mapping, and in remote-sensing applications since principally no electrical access is needed.
Nanodiamond crystals containing single color centers have been grown by chemical vapor deposition (CVD). The fluorescence from individual crystallites was directly correlated with crystallite size using a combined atomic force and scanning confocal fluorescence microscope. Under the conditions employed, the optimal size for single optically active nitrogen-vacancy (NV) center incorporation was measured to be 60 to 70 nm. The findings highlight a strong dependence of NV incorporation on crystal size, particularly with crystals less than 50 nm in size.
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