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Register a new userQuantum Phase Transition and Protected Ideal Transport in a Kondo Chain
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We study the low energy physics of a Kondo chain where electrons from a one-dimensional band interact with magnetic moments via an anisotropic exchange interaction. It is demonstrated that the anisotropy gives rise to two different phases which are separated by a quantum phase transition. In the phase with easy plane anisotropy, Z$_2$ symmetry between sectors with different helicity of the electrons is broken. As a result, localization effects are suppressed and the dc transport acquires (partial) symmetry protection. This effect is similar to the protection of the edge transport in time-reversal invariant topological insulators. The phase with easy axis anisotropy corresponds to the Tomonaga-Luttinger liquid with a pronounced spin-charge separation. The slow charge density wave modes have no protection against localizatioin.
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Ballistic transport of helical edge modes in two-dimensional topological insulators is protected by time-reversal symmetry. Recently it was pointed out [1] that coupling of non-interacting helical electrons to an array of randomly anisotropic Kondo impurities can lead to a spontaneous breaking of the symmetry and, thus, can remove this protection. We have analyzed effects of the interaction between the electrons using a combination of the functional and the Abelian bosonization approaches. The suppression of the ballistic transport turns out to be robust in a broad range of the interaction strength. We have evaluated the renormalization of the localization length and have found that, for strong interaction, it is substantial. We have identified various regimes of the dc transport and discussed its temperature and sample size dependencies in each of the regimes.
The recently discovered three dimensional or bulk topological insulators are expected to exhibit exotic quantum phenomena. It is believed that a trivial insulator can be twisted into a topological state by modulating the spin-orbit interaction or the crystal lattice via odd number of band
We study electron transport through a multichannel fractional quantum Hall edge in the presence of both interchannel interaction and random tunneling between channels, with emphasis on the role of contacts. The prime example in our discussion is the edge at filling factor 2/3 with two counterpropagating channels. Having established a general framework to describe contacts to a multichannel edge as thermal reservoirs, we particularly focus on the line-junction model for the contacts and investigate incoherent charge transport for an arbitrary strength of interchannel interaction beneath the contacts and, possibly different, outside them. We show that the conductance does not explicitly depend on the interaction strength either in or outside the contact regions (implicitly, it only depends through renormalization of the tunneling rates). Rather, a long line-junction contact is characterized by a single parameter which defines the modes that are at thermal equilibrium with the contact and is determined by the interplay of various types of scattering beneath the contact. This parameter -- playing the role of an effective interaction strength within an idealized model of thermal reservoirs -- is generically nonzero and affects the conductance. We formulate a framework of fractionalization-renormalized tunneling to describe the effect of disorder on transport in the presence of interchannel interaction. Within this framework, we give a detailed discussion of charge equilibration for arbitrarily strong interaction in the bulk of the edge and arbitrary effective interaction characterizing the line-junction contacts.
We explore the scaling description for a two-dimensional metal-insulator transition (MIT) of electrons in silicon. Near the MIT, $beta_{T}/p = (-1/p)d(ln g)/d(ln T)$ is universal (with $p$, a sample dependent exponent, determined separately; $g$--conductance, $T$--temperature). We obtain the characteristic temperatures $T_0$ and $T_1$ demarking respectively the quantum critical region and the regime of validity of single parameter scaling in the metallic phase, and show that $T_1$ vanishes as the transition is approached. For $T<T_1$, the scaling of the data requires a second parameter. Moreover, all of the data can be described with two-parameter scaling at all densities -- even far from the transition.
Disordered non-interacting systems in sufficiently high dimensions have been predicted to display a non-Anderson disorder-driven transition that manifests itself in the critical behaviour of the density of states and other physical observables. Recently the critical properties of this transition have been extensively studied for the specific case of Weyl semimetals by means of numerical and renormalisation-group approaches. Despite this, the values of the critical exponents at such a transition in a Weyl semimetal are currently under debate. We present an independent calculation of the critical exponents using a two-loop renormalisation-group approach for Weyl fermions in $2-varepsilon$ dimensions and resolve controversies currently existing in the literature.
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