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Register a new userInterfacial Coupling and Electronic Structure of Two-Dimensional Silicon Grown on the Ag(111) Surface at High Temperature
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Freestanding silicene, a monolayer of Si arranged in a honeycomb structure, has been predicted to give rise to massless Dirac fermions, akin to graphene. However, Si structures grown on a supporting substrate can show properties that strongly deviate from the freestanding case. Here, combining scanning tunneling microscopy/spectroscopy and differential conductance mapping, we show that the electrical properties of the ($sqrt{3}timessqrt{3}$) phase of few-layer Si grown on Ag(111) strongly depend on film thickness, where the electron phase coherence length decreases and the free-electron-like surface state gradually diminishes when approaching the interface. These features are presumably attributable to the inelastic inter-band electron-electron scattering originating from the overlap between the surface state, interface state and the bulk state of the substrate. We further demonstrate that the intrinsic electronic structure of the as grown ($sqrt{3}timessqrt{3}$) phase is identical to that of the ($sqrt{3}timessqrt{3}$)R$30^{circ}$ reconstructed Ag on Si(111), both of which exhibit the parabolic energy-momentum dispersion relation with comparable electron effective masses. These findings highlight the essential role of interfacial coupling on the properties of two-dimensional Si structures grown on supporting substrates, which should be thoroughly scrutinized in pursuit of silicene.
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The geometrical and electronic properties of the monolayer (ML) of tetracene (Tc) molecules on Ag(111) are systematically investigated by means of DFT calculations with the use of localized basis set. The bridge and hollow adsorption positions of the molecule in the commensurate $gamma$-Tc/Ag(111) are revealed to be the most stable and equally favorable irrespective to the approximation chosen for the exchange-correlation functional. The binding energy is entirely determined by the long-range dispersive interaction. The former lowest unoccupied orbital remains being unoccupied in the case of $gamma$-Tc/Ag(111) as well as in the $alpha$-phase with increased coverage. The unit cell of the $alpha$-phase with point-on-line registry was adapted for calculations based on the available experimental data and the computed structures of the $gamma$-phase. The calculated position of the Tc/Ag(111) interface state is found to be noticeably dependent on the lattice constant of the substrate, however its energy shift with respect to the Shockley surface state of the unperturbed clean side of the slab is sensitive only to the adsorption distance and in good agreement with the experimentally measured energy shift.
Utilizing spin-polarized scanning tunneling microscopy and spectroscopy, we found coexistence of perpendicularly and in-plane magnetized cobalt nanoscale islands on the Ag(111) surface, and the relationship between the moire corrugation amplitude and the magnetization direction of the islands; the islands with the stronger moire corrugation show the perpendicular magnetization, and the ones with the weaker moire corrugation do the in-plane. Density functional theory calculations reproduce the relationship and explain the differences between the two types of the islands with an fcc stacking fault in the intrinsic hcp stacking of cobalt.
In this Letter, we present the first non-contact atomic force microscopy (nc-AFM) of a silicene on silver (Ag) surface, obtained by combining non-contact atomic force microscopy (nc-AFM) and scanning tunneling microscopy (STM). STM images over large areas of silicene grown on Ag(111) surface show both (sqrt13xsqrt13)R13.9{deg} and (4x4) superstructures. For the widely observed (4x4) structure, the nc-AFM topography shows an atomic-scale contrast inversion as the tip-surface distance is decreased. At the shortest tip-surface distance, the nc-AFM topography is very similar to the STM one. The observed structure in the nc-AFM topography is compatible with only one out of two silicon atoms being visible. This indicates unambiguously a strong buckling of the silicene honeycomb layer.
Single layer (SL) phosphorus (phosphorene) has drawn considerable research attention recently as a two-dimensional (2D) material for application promises. It is a semiconductor showing superior transport and optical properties. Few-layer or SL black phosphorus has been successfully isolated by exfoliation from bulk crystals and extensively studied thereof for its electronic and optical properties. Blue phosphorus (blueP), an allotrope of black phosphorus where atoms are arranged in a more flat atomic configuration, has been recently suggested by theory to exist in the SL form on some substrates. In this work, we report the formation of a blueP-like epilayer on Au(111) by molecular-beam epitaxy. In particular, we uncover by scanning tunneling microscopy (STM) one-dimensional (1D) atomic chains at low coverage, which develop into more compact islands or patches of $(sqrt{3}timessqrt{3})R30^circ$ structure with increasing coverage before blueP-like islands nucleate and grow. We also note an interesting growth characteristic where the $(sqrt{3}timessqrt{3})R30^circ$ surface at intermediate coverage tends to phase-separate into locally low-coverage 1D chain and high-coverage blueP-like structures, respectively. This experiment thus not only lends a support of the recently proposed half-layer by half-layer (HLBHL) growth mechanism but also reveals the kinetic details of blueP growth processes.
Optical and electronic properties of two dimensional few layers graphitic silicon carbide (GSiC), in particular monolayer and bilayer, are investigated by density functional theory and found different from that of graphene and silicene. Monolayer GSiC has direct bandgap while few layers exhibit indirect bandgap. The bandgap of monolayer GSiC can be tuned by an in-plane strain. Properties of bilayer GSiC are extremely sensitive to the interlayer distance. These predictions promise that monolayer GSiC could be a remarkable candidate for novel type of light-emitting diodes utilizing its unique optical properties distinct from graphene, silicene and few layers GSiC.
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