No Arabic abstract
The renormalization of electronic eigenenergies due to electron-phonon coupling is sizable in many materials with light atoms. This effect, often neglected in ab-initio calculations, can be computed using the perturbation-based Allen-Heine-Cardona theory in the adiabatic or non-adiabatic harmonic approximation. After a short description of the numerous recent progresses in this field, and a brief overview of the theory, we focus on the issue of phonon wavevector sampling convergence, until now poorly understood. Indeed, the renormalization is obtained numerically through a q-point sampling inside the BZ. For q-points close to G, we show that a divergence due to non-zero Born effective charge appears in the electron-phonon matrix elements, leading to a divergence of the integral over the BZ for band extrema. Although it should vanish for non-polar materials, unphysical residual Born effective charges are usually present in ab-initio calculations. Here, we propose a solution that improves the coupled q-point convergence dramatically. For polar materials, the problem is more severe: the divergence of the integral does not disappear in the adiabatic harmonic approximation, but only in the non-adiabatic harmonic approximation. In all cases, we study in detail the convergence behavior of the renormalization as the q-point sampling goes to infinity and the imaginary broadening parameter goes to zero. This allows extrapolation, thus enabling a systematic way to converge the renormalization for both polar and non-polar materials. Finally, the adiabatic and non-adiabatic theory, with corrections for the divergence problem, are applied to the study of five semiconductors and insulators: a-AlN, b-AlN, BN, diamond and silicon. For these five materials, we present the zero-point renormalization, temperature dependence, phonon-induced lifetime broadening and the renormalized electronic bandstructure.
The $phi(kpp)sim kpp$ relation is called polarization structure. By density functional calculations, we study the polarization structure in ferroelectric perovskite PbTiO$_3$, revealing (1) the $kpp$ point that contributes most to the electronic polarization, (2) the magnitude of bandwidth, and (3) subtle curvature of polarization dispersion. We also investigate how polarization structure in PbTiO$_3$ is modified by compressive inplane strains. The bandwidth of polarization dispersion in PbTiO$_3$ is shown to exhibit an unusual decline, though the total polarization is enhanced. As another outcome of this study, we formulate an analytical scheme for the purpose of identifying what determine the polarization structure at arbitrary $kpp$ points by means of Wannier functions. We find that $phi(kpp)$ is determined by two competing factors: one is the overlaps between neighboring Wannier functions within the plane {it perpendicular} to the polarization direction, and the other is the localization length {it parallel} to the polarization direction. Inplane strain increases the former while decreases the latter, causing interesting non-monotonous effects on polarization structure. Finally, polarization dispersion in another paradigm ferroelectric BaTiO$_3$ is discussed and compared with that of PbTiO$_3$.
The ``S-shape (decrease-increase-decrease) temperature dependence of luminescence peak shift from semiconductors is considered. A luminescence model for localized state ensemble was employed to interpret this anomalous temperature dependence of emission peak. Excellent agreement between the theoretical calculation and the experiments was achieved over the whole studied temperature region. The physical origin of the ``S-shaped shift is revealed.
We analyze the temperature dependence of the electron spin resonance linewidth above the critical region in exchange-coupled magnetic insulators. The focus is on separating the contributions to the linewidth from spin-spin interactions, spin-one-phonon interactions and spin-two-phonon interactions at temperatures where the spin-spin term is constant and the one- and two-phonon terms vary as T and T^2, respectively. Taking Co3O4 as an example, we use a least squares fit over the temperature range 50 K < T < 500 K to obtain values of the three components. It is found that the spin-spin mechanism is dominant below 100 K, while the two-phonon mechanism is most important above 250 K. In the intermediate region, all three mechanisms make significant contributions.
We present first-principles electronic structure calculations of Mn doped III-V semiconductors based on the local spin-density approximation (LSDA) as well as the self-interaction corrected local spin density method (SIC-LSD). We find that it is crucial to use a self-interaction free approach to properly describe the electronic ground state. The SIC-LSD calculations predict the proper electronic ground state configuration for Mn in GaAs, GaP, and GaN. Excellent quantitative agreement with experiment is found for magnetic moment and p-d exchange in (GaMn)As. These results allow us to validate commonly used models for magnetic semiconductors. Furthermore, we discuss the delicate problem of extracting binding energies of localized levels from density functional theory calculations. We propose three approaches to take into account final state effects to estimate the binding energies of the Mn-d levels in GaAs. We find good agreement between computed values and estimates from photoemisison experiments.
The renormalization of electronic eigenenergies due to electron-phonon interactions (temperature dependence and zero-point motion effect) is important in many materials. We address it in the adiabatic harmonic approximation, based on first principles (e.g. Density-Functional Theory), from different points of view: directly from atomic position fluctuations or, alternatively, from Janaks theorem generalized to the case where the Helmholtz free energy, including the vibrational entropy, is used. We prove their equivalence, based on the usual form of Janaks theorem and on the dynamical equation. We then also place the Allen-Heine-Cardona (AHC) theory of the renormalization in a first-principle context. The AHC theory relies on the rigid-ion approximation, and naturally leads to a self-energy (Fan) contribution and a Debye-Waller contribution. Such a splitting can also be done for the complete harmonic adiabatic expression, in which the rigid-ion approximation is not required. A numerical study within the Density-Functional Perturbation theory framework allows us to compare the AHC theory with frozen-phonon calculations, with or without the rigid-ion terms. For the two different numerical approaches without rigid-ion terms, the agreement is better than 7 $mu$eV in the case of diamond, which represent an agreement to 5 significant digits. The magnitude of the non rigid-ion terms in this case is also presented, distinguishing specific phonon modes contributions to different electronic eigenenergies.